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公开(公告)号：KR100342533B1
公开(公告)日：2002-06-28
申请号：KR1020000046509
申请日：2000-08-11
Applicant: 삼성전자주식회사
IPC: G02B6/00
Abstract: 본 발명은 파장 분할 다중화 시스템에 있어서, 기판과; 상기 기판 위에 형성하며, 입력단과 출력단을 가진 주 광도파로와; 상기 기판 위에 형성하며, 일단에는 상기 주 광도파로로부터 분기된 광신호가 입력되는 분기 입력단과, 타단에는 분기 입력단을 통해 입력된 광신호가 출력되는 분기 출력단을 가진 다수개의 분기 광도파로와; 상기 주 광도파로와 각 분기 광도파로의 분기 입력단을 결합하며, 미리 설정된 중심 파장의 광신호만을 결합하는 격자도움형 방향성 결합부를 포함하여 구성함을 특징으로 하는 파장 가변형 광파장 분할기를 제공한다.
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公开(公告)号：KR1020020012051A
公开(公告)日：2002-02-15
申请号：KR1020000045477
申请日：2000-08-05
Applicant: 삼성전자주식회사
IPC: H01S5/10
Abstract: PURPOSE: A vertical cavity surface emitting laser chip set having a monitoring photo diode and its manufacturing method are provided to remove difficulty in element arrangement without supplementarily installing separate mechanism and obtain high yield by making chips that are grown at separate wafers, respectively, as a chip set. CONSTITUTION: A vertical cavity surface emitting laser chip set(100) comprises a vertical cavity surface emitting laser chip(110) and a monitoring photo diode chip(120) attached to the bottom side of the vertical cavity surface emitting laser chip(110). The vertical cavity surface emitting laser chip(110) includes a laser chip substrate(112), an emitting surface(114) on the top and the bottom of the substrate(112), an anode pattern(116) on the top of the substrate(112), one end of the anode pattern(116) coupled to the emitting surface(114), a cathode pattern on the back of the substrate(112), and many metal pads on the corners of the back of the substrate(112). The monitoring photo diode chip(120) includes a photo diode substrate(122), a receiving surface(123) on the top of the substrate(122), a cathode pattern(124) on the top of the substrate(122), one end of the cathode pattern(124) coupled to the receiving surface(123), metal pads(125) on the corners of the top of the substrate(122), metal balls(126) attached to the top of the metal pads(125) of the substrate(122) and the back of the metal pads of the substrate(112), and an anode pattern on the back of the substrate(122).
Abstract translation: 目的：提供一种具有监控光电二极管的垂直腔表面发射激光芯片组及其制造方法，以消除元件布置中的困难，而不需要分别安装单独的机构，并通过分别在单独的晶片上生长的芯片获得高产量，作为 芯片组。 构成：垂直腔表面发射激光器芯片组（100）包括垂直腔表面发射激光器芯片（110）和连接到垂直腔表面发射激光器芯片（110）的底侧的监测光电二极管芯片（120）。 垂直腔表面发射激光器芯片（110）包括激光器芯片衬底（112），衬底（112）的顶部和底部上的发射表面（114），衬底顶部上的阳极图案（116） （112），阳极图案（116）的一端耦合到发射表面（114），阴极图案位于衬底（112）的背面，以及在衬底（112）的背面的拐角上的许多金属焊盘 ）。 监测光二极管芯片（120）包括光电二极管衬底（122），在衬底（122）的顶部上的接收表面（123），在衬底（122）的顶部上的阴极图案（124），一个 耦合到接收表面（123）的阴极图案（124）的端部，衬底（122）的顶部的角部上的金属焊盘（125），附接到金属焊盘（125）的顶部的金属球 ）和衬底（112）的金属焊盘的背面，以及在衬底（122）的背面上的阳极图案。
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公开(公告)号：KR1020010054307A
公开(公告)日：2001-07-02
申请号：KR1019990055081
申请日：1999-12-06
Applicant: 삼성전자주식회사
IPC: G02B6/02
Abstract: PURPOSE: A demultiplexer of a WDM communication system is provided to have a dielectric thin film filter and a curved optical wave-guide for changing an incidence angle of the filter. CONSTITUTION: In a demultiplexer of a WDM communication system, a flat optical wave-guide(300) is provided. A unitary dielectric thin film filter(350) is attached to one side stage of the flat optical wave-guide to change a wavelength of the beam transmitted depending on an incidence angle of an incidence beam. A metal mirror(340) is attached to the other side stage of the flat optical wave-guide to reflect the incidence beam. A zigzag optical wave-guide(330) is placed between the unitary dielectric thin film filter and the metal mirror to change the incidence angle of the beam into the dielectric thin film filter.
Abstract translation: 目的：提供WDM通信系统的解复用器以具有用于改变滤波器的入射角的电介质薄膜滤波器和弯曲光波导。 构成：在WDM通信系统的解复用器中，提供平坦的光波导（300）。 单平面电介质薄膜滤光片（350）附着在平面光波导的一个侧面，以改变根据入射光束的入射角透射的光束的波长。 金属镜（340）附接到平面光波导的另一侧以反射入射光束。 将锯齿形光波导（330）放置在单一电介质薄膜滤光器和金属反射镜之间，以将光束的入射角改变为电介质薄膜滤光片。
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公开(公告)号：KR100369594B1
公开(公告)日：2003-01-29
申请号：KR1020000045477
申请日：2000-08-05
Applicant: 삼성전자주식회사
IPC: H01S5/10
Abstract: PURPOSE: A vertical cavity surface emitting laser chip set having a monitoring photo diode and its manufacturing method are provided to remove difficulty in element arrangement without supplementarily installing separate mechanism and obtain high yield by making chips that are grown at separate wafers, respectively, as a chip set. CONSTITUTION: A vertical cavity surface emitting laser chip set(100) comprises a vertical cavity surface emitting laser chip(110) and a monitoring photo diode chip(120) attached to the bottom side of the vertical cavity surface emitting laser chip(110). The vertical cavity surface emitting laser chip(110) includes a laser chip substrate(112), an emitting surface(114) on the top and the bottom of the substrate(112), an anode pattern(116) on the top of the substrate(112), one end of the anode pattern(116) coupled to the emitting surface(114), a cathode pattern on the back of the substrate(112), and many metal pads on the corners of the back of the substrate(112). The monitoring photo diode chip(120) includes a photo diode substrate(122), a receiving surface(123) on the top of the substrate(122), a cathode pattern(124) on the top of the substrate(122), one end of the cathode pattern(124) coupled to the receiving surface(123), metal pads(125) on the corners of the top of the substrate(122), metal balls(126) attached to the top of the metal pads(125) of the substrate(122) and the back of the metal pads of the substrate(112), and an anode pattern on the back of the substrate(122).
Abstract translation: 目的：提供一种具有监控光电二极管的垂直腔表面发射激光器芯片组及其制造方法，用于消除元件布置中的困难，而无需辅助地安装分离的机构，并且通过分别在不同晶片上生长的芯片作为 芯片组。 构成：垂直腔表面发射激光器芯片组（100）包括垂直腔表面发射激光器芯片（110）和附着于垂直腔表面发射激光器芯片（110）底侧的监测光电二极管芯片（120）。 垂直腔表面发射激光器芯片（110）包括激光器芯片衬底（112），在衬底（112）的顶部和底部上的发射表面（114），在衬底顶部上的阳极图案（116） （112），阳极图案（116）的耦合到发射表面（114）的一端，在衬底（112）的背面上的阴极图案以及衬底（112）背面的角落上的许多金属焊盘 ）。 监控光电二极管芯片（120）包括光电二极管基板（122），在基板（122）顶部上的接收表面（123），在基板（122）顶部上的阴极图案（124），一个 耦合到接收表面（123）的阴极图案（124）的端部，衬底（122）的顶部的拐角上的金属衬垫（125），附着到金属衬垫（125）的顶部的金属球（126） ）和衬底（112）的金属衬垫的背面之间的阳极图案以及衬底（122）的背面上的阳极图案。
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公开(公告)号：KR100342498B1
公开(公告)日：2002-06-28
申请号：KR1019990055081
申请日：1999-12-06
Applicant: 삼성전자주식회사
IPC: G02B6/02
Abstract: 본발명은파장분할다중화통신시스템의역다중화기에관한것으로서, 개시된역다중화기는파장분할다중화통신시스템의역다중화기에있어서, 평면광도파로; 상기평면광도파로의일측단에부착되어입사되는빔의입사각도에따라투과되는빔의파장이달라지는단일유전체박막필터; 상기평면광도파로의타측단에부착되어입사되는빔을반사시키는금속거울; 및상기평면광도파로의일부를구성하며, 상기단일유전체박막필터와금속거울사이에위치하고, 그내부를진행하여상기단일유전체박막필터로입사되는빔을소정각도로입사시키는직선도파로와, 상기단일유전체박막필터에의해다시반사된빔을다른입사각도로상기단일유전체박막필터에다시입사시키는곡선도파로로이루어지는지그재그광도파로를포함한다.
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Patent Agency Ranking
公开(公告)号：KR100342472B1
公开(公告)日：2002-06-28
申请号：KR1020000050396
申请日：2000-08-29
Applicant: 삼성전자주식회사
IPC: G02B6/00
Abstract: 본 발명에 따라 다수의 위상 변조 도파로로 구성된 도파로열 격자와, 상기 도파로열 격자로 파장에 따른 다채널의 광신호를 입력시키는 제1 도파로열과, 각각 상기 도파로열 격자를 통과하여 역다중화된 각 채널이 출력되는 다수의 제2 도파로열을 구비하는 파장분할 다중화기/역다중화기는, 상기 제2 도파로열의 각 도파로의 지름 방향으로 기설정된 거리만큼 이격되어 위치하며 상기 도파로 내로 진행하는 채널을 그 내부로 결합시키기 위한 격자가 일단에 형성된 광결합 도파로를 구비하고, 상기 격자는 파장에 따른 결합 효율이 상기 채널의 파장에 대해 최대값을 가지는 주기 및 길이를 가짐함을 특징으로 하는 광결합 도파로를 구비한다.
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公开(公告)号：KR100334791B1
公开(公告)日：2002-05-02
申请号：KR1019990047794
申请日：1999-10-30
Applicant: 삼성전자주식회사
Abstract: 본발명에따른파장분할다중시스템을위한광검출기는입력되는광신호중에서중심파장의광신호만을투과시키는광파장대역통과필터; 및상기광파장대역통과필터가수광면에코팅되어있으며, 상기광파장대역통과필터를투과한광신호의세기및 광량에따라소정의전기신호를출력하는광검출소자를포함한다. 상기광파장대역통과필터는상기광검출소자의기판하부면의수광면에코팅된다수의유전체박막들로이루어진제1 반사층; 상기제1 반사층에코팅된유전체박막으로이루어진공간층; 및상기공간층에코팅된다수의유전체박막들로이루어진제2 반사층으로구성된다.
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公开(公告)号：KR1020020013106A
公开(公告)日：2002-02-20
申请号：KR1020000046509
申请日：2000-08-11
Applicant: 삼성전자주식회사
IPC: G02B6/00
Abstract: PURPOSE: A tunable light wavelength divider and a fabrication method thereof are provided, which can obtain a uniform output power as reducing a length of the device, and have a low loss of an output light signal and a simple fabrication process. CONSTITUTION: A 1xN light wavelength divider(1000) comprises a straight main light waveguide(100), a number of branch light waveguides(200) arranged in sequence in one side of the main light waveguide, and a number of grating assisted directional coupler parts(300) branching only a light signal of a predetermined wavelength by coupling one end of the branch light waveguides and the main light waveguide. The main light waveguide has an input port to which a multiplexed light signal is inputted and an output port outputting remained light signals. The branch light waveguide has a branch input port and a branch output port. The grating assisted directional coupler part has a grating period and a coupling length(L1-Ln) respectively to couple only a signal of a specific wavelength from the main light waveguide to the branch light waveguide.
Abstract translation: 目的：提供可调光波长分配器及其制造方法，其可以获得均匀的输出功率，从而减小器件的长度，并且具有低的输出光信号损耗和简单的制造工艺。 构成：1xN光波长分配器（1000）包括直的主光波导（100），在主光波导的一侧依次布置的多个分支光波导（200）和多个光栅辅助定向耦合器部件 （300）通过耦合分支光波导和主光波导的一端仅分支预定波长的光信号。 主光波导具有输入端口，输入复用光信号，输出端口输出保持光信号。 分支光波导具有分支输入端口和分支输出端口。 光栅辅助定向耦合器部分分别具有光栅周期和耦合长度（L1-Ln），以仅将特定波长的信号从主光波导耦合到分支光波导。
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公开(公告)号：KR1020010039415A
公开(公告)日：2001-05-15
申请号：KR1019990047794
申请日：1999-10-30
Applicant: 삼성전자주식회사
Abstract: PURPOSE: An optical detector for a wavelength division multiplexing system and a method for fabricating the same are provided to minimize a volume and a dependency of a polarized light in an optical detector having an optical wavelength bandpass filter and an optical detecting device. CONSTITUTION: A n-InP layer(44), a n-InGaAs layer(43), and a p-InP layer(41) are deposited on a n-InP substrate(45), thereby forming an optical detecting device having a PIN(positive intrinsic negative) junction structure. A metal thin film such as an Au/Au-Sn is coated on the optical detecting device. An electrode(46) is formed on the lower surface of the substrate. An optical wavelength bandpass filter(47) is formed on the light receiving surface of the substrate to transmit only an optical signal of a center wavelength among an input optical signals input. The optical detecting device outputs a predetermined electrical signal, according to the intensity of radiation and the strength of the optical signal transmitting the optical wavelength bandpass filter. The optical detecting device is a PIN photodiode.
Abstract translation: 目的：提供一种用于波分复用系统的光学检测器及其制造方法，以使具有光波长带通滤波器和光学检测装置的光检测器中的偏振光的体积和依赖性最小化。 构成：n-InP层（44），n-InGaAs层（43）和p-InP层（41）沉积在n-InP衬底（45）上，从而形成具有PIN （正本征负）结结构。 金属薄膜如Au / Au-Sn涂覆在光学检测装置上。 电极（46）形成在基板的下表面上。 在基板的光接收表面上形成光波长带通滤波器（47），仅在输入的光信号输入中仅发送中心波长的光信号。 光检测装置根据辐射强度和发送光波长带通滤波器的光信号的强度输出预定的电信号。 光学检测装置是PIN光电二极管。
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公开(公告)号：KR100333900B1
公开(公告)日：2002-04-24
申请号：KR1019990001764
申请日：1999-01-21
Applicant: 삼성전자주식회사
IPC: G02B6/42
CPC classification number: G02B6/1228 , G02B6/136 , G02B6/138 , G02B6/305 , G02B2006/12069 , G02B2006/12097
Abstract: 본발명은모드모양변환기, 그제작방법및 이를구비한집적광학소자에관한것으로, 광섬유들과광소자의기능수행부의입출력측사이에위치하여광섬유들의모드와기능수행부의입출력단의모드를결합하는모드모양변환기에있어서, 기판; 기판에코팅되고, 코팅된층중소정부분이식각된하부클래드층; 식각된부분에형성되는하위립 광도파로; 하위립 광도파로및 식각되지않은하부클래드층위에형성되는코아층; 코아층위에하위립 광도파로와정렬하여소정형태로형성되는상위립 광도파로; 및상위립 광도파로및 코아층위에형성되는상부클래드층을포함함을특징으로한다. 본발명에의하면, 단일매질로이루어진코아를사용하고, 하위립 광도파로에의한요철패턴이결합영역과변환영역일부에만존재하므로상위립 광도파로의패턴형성이어렵지않게되어제작공정이간단하며, 모드모양변환기의입력부광도파로가원형모드를갖기때문에결합효율이크다.
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