公开(公告)号：KR1020030062726A

公开(公告)日：2003-07-28

申请号：KR1020020003079

申请日：2002-01-18

Applicant: 삼성전자주식회사

Inventor： 김만수

IPC: G02F1/1335

CPC classification number: G02B6/0036 ,  G02B6/0053

Abstract: PURPOSE: A light guide plate, a thin liquid crystal display using the same, and a sheetless liquid crystal display using the same are provided to improve the brightness at the front view angle without a prism sheet and a diffusion sheet. CONSTITUTION: A light guide body includes a plurality of sides. A light reflective surface has a light reflecting element to reflect light inputted from any one of the sides. A light projecting surface(222f) faces the light reflective surface and projects the light reflected by the light reflecting element. At least one or more view angle compensating grooves(221a) are formed on the light projecting surface to improve a front view angle to a liquid crystal panel while the light is projected from the light projecting surface. The view angle compensating grooves have a plurality of side walls.

Abstract translation: 目的：提供导光板，使用其的薄型液晶显示器和使用其的无片液晶显示器，以提高前视角的亮度，而不需要棱镜片和漫射片。 构成：导光体包括多个侧面。 光反射表面具有用于反射从任一侧输入的光的光反射元件。 光投射表面（222f）面向光反射表面并且突出由光反射元件反射的光。 至少一个或多个视角补偿槽（221a）形成在光投射表面上，以在光从光投射表面突出时提高与液晶面板的前视角。 视角补偿槽具有多个侧壁。

公开(公告)号：KR1020020094222A

公开(公告)日：2002-12-18

申请号：KR1020010031073

申请日：2001-06-04

Applicant: 삼성전자주식회사

Inventor： 김병동 ,  류규복 ,  박연식 ,  신충환 ,  김만수

IPC: H01L21/8247

Abstract: PURPOSE: A method for manufacturing a stacked flash memory cell is provided to prevent a shift of threshold voltage of memory cells by enhancing a charge retention capability of a floating gate. CONSTITUTION: A gate oxide layer is formed on an active region of a semiconductor substrate(200). A structure sequentially stacked a floating gate, a dielectric film of ONO structure and a control gate are sequentially formed on a desired portion of the gate oxide(210-230). An oxide layer made of SiON is formed on the gate oxide layer including the stacked structure by an oxidation processing using N2O gas or NO gas as a source gas(240). An LDD(Lightly Doped Drain) region is formed in the substrate(250). After forming an insulating spacer at both sidewalls of the stacked structure(260), source and drain regions are formed(270).

Abstract translation: 目的：提供一种用于制造堆叠式闪存单元的方法，以通过增强浮动栅极的电荷保持能力来防止存储单元的阈值电压偏移。 构成：在半导体衬底（200）的有源区上形成栅氧化层。 在栅极氧化物（210-230）的期望部分依次形成依次层叠浮栅，ONO结构的电介质膜和控制栅的结构。 通过使用N2O气体或NO气体作为源气体（240）的氧化处理，在包括堆叠结构的栅极氧化物层上形成由SiON制成的氧化物层。 在基板（250）中形成LDD（轻掺杂漏极）区域。 在层叠结构（260）的两个侧壁处形成绝缘间隔物之后，形成源区和漏区（270）。

公开(公告)号：KR1020010055573A

公开(公告)日：2001-07-04

申请号：KR1019990056813

申请日：1999-12-11

Applicant: 삼성전자주식회사

Inventor： 김만수 ,  신충환 ,  박연식

IPC: H01L21/22

Abstract: PURPOSE: A vertical diffusion furnace for manufacturing a semiconductor device is provided to supply uniformly a gas to each wafer by forming an exhausting portion on a slot portion supporting the wafer. CONSTITUTION: A heater portion(50) forms an outer body. A reaction tube(60) is installed at an inside of the heater portion(50). The reaction tube(60) has an exhaust portion for exhausting a supplied gas. A boat(80) is installed at an inside of the reaction tube(60). The boat(80) has an upper plate(81), a lower plate(83), and a multitude of support bar(85). The support bars(85) are installed between the upper plate(81) and the lower plate(83). Slots for supporting edges of wafers are formed on the support bars(85). A guide path(85b) is formed on the boat(80) in order to guide a gas to the reaction tube(60). A boat cap(90) is formed to load the boat(80). A gas inflow path(91) is formed on the boat cap(90).

Abstract translation: 目的：提供一种用于制造半导体器件的垂直扩散炉，用于通过在支撑晶片的槽部上形成排气部分来均匀地供给每个晶片。 构成：加热器部分（50）形成外部主体。 反应管（60）安装在加热器部分（50）的内部。 反应管（60）具有用于排出供给气体的排气部。 船（80）安装在反应管（60）的内部。 船（80）具有上板（81），下板（83）和多个支撑杆（85）。 支撑杆（85）安装在上板（81）和下板（83）之间。 在支撑杆（85）上形成用于支撑晶片边缘的槽。 引导路径（85b）形成在船（80）上以引导气体到反应管（60）。 形成船盖（90）以装载船（80）。 在船帽（90）上形成有气体流入路径（91）。

公开(公告)号：KR1020010045167A

公开(公告)日：2001-06-05

申请号：KR1019990048361

申请日：1999-11-03

Applicant: 삼성전자주식회사

Inventor： 김만수 ,  김병동 ,  신충환

IPC: H01L21/22

Abstract: PURPOSE: A boat cap of a vertical diffusion furnace for manufacturing a semiconductor device is to provide a uniform layer of an excellent quality regarding the entire surface of a wafer, by making reaction gas of a uniform quantity flow and maintaining a uniform distribution space of a temperature. CONSTITUTION: Vertical surfaces in parallel with a flat zone(42) of a wafer(40) are formed in a reaction pipe(10), upper and lower plates(32,34) of a boat(30) and a boat cap(50) so that reaction gas does not flow to the flat zone of the wafer intensively. Vertical surfaces in parallel with the flat zone of the wafer are formed in at least the inner surface of a heater so that a uniform temperature is used regarding the entire surface of the wafer.

Abstract translation: 目的：用于制造半导体器件的垂直扩散炉的船帽是通过制造均匀流量的反应气体并保持均匀的分布空间来提供关于晶片的整个表面的均匀的优质品质层 温度。 构成：在反应管（10）中形成与晶片（40）的平坦区域（42）平行的垂直表面，船（30）的上板和下板（32,34）和船帽（50） ），使得反应气体不会集中地流向晶片的平坦区域。 至少在加热器的内表面上形成与晶片的平坦区平行的垂直表面，使得关于晶片的整个表面使用均匀的温度。

公开(公告)号：KR1020000026189A

公开(公告)日：2000-05-15

申请号：KR1019980043617

申请日：1998-10-19

Applicant: 삼성전자주식회사

Inventor： 김만수 ,  유상철

IPC: H01L21/00

Abstract: PURPOSE: A line connector of thermocouple element used in detecting temperature of heating furnace is provided to delay a rapid oxidation of a terminal to enhance reliability of a temperature detecting signal, and to reduce costs by extending a life of parts containing a temperature compensating line and a terminal. CONSTITUTION: A line connector of thermocouple element used in detecting temperature of heating furnace comprises a terminal unit(310), a terminal unit fixing part(330), and a support pole(350). The terminal unit connects a terminal of a drawing site of one thermocouple element or more mounted on an outer wall of a heating furnace and a terminal of temperature compensating line site connected to a controller. The terminal unit fixing part consists of a hollow tube containing the temperature compensating line and coupled to the terminal unit. The support pole consists of a hollow tube.

Abstract translation: 目的：提供用于检测加热炉温度的热电偶元件的线路连接器，以延迟端子的快速氧化，提高温度检测信号的可靠性，并通过延长包含温度补偿线的部件的寿命来降低成本， 一个终端。 构成：用于检测加热炉温度的热电偶元件的线路连接器包括端子单元（310），端子单元固定部分（330）和支撑杆（350）。 终端单元将连接在加热炉的外壁上的一个热电偶元件的绘图位置的端子和连接到控制器的温度补偿线路的端子连接。 端子单元固定部分由包含温度补偿线并耦合到端子单元的中空管组成。 支撑杆由中空管组成。

公开(公告)号：KR1020080004104A

公开(公告)日：2008-01-09

申请号：KR1020060062633

申请日：2006-07-04

Applicant: 삼성전자주식회사

Inventor： 김만수

IPC: G02F1/1333

CPC classification number: G02F1/133308 ,  G02F1/1336 ,  G02F2201/465

Abstract: A chassis for a flat panel display device and a flat panel display device having the same are provided to facilitate fastening of a mold frame and a chassis, and strengthen a fastening force by having a fastening part at one end of at least one side wall of a chassis. A base plate(310) has an opened region. A plurality of side walls(320) are formed to extend from the base plate(310). The side wall(320) includes the first bent portion(321) formed to extend in a certain direction from the base plate(310) and the second bent portion(323) extending from the first bent portion(321) and facing the base plate(310). A fastening portion(330) is formed at one end of the second bent portion(323). The first bent portion extends in a vertical direction from the base plate(310). The fastening portion(330) is formed to face the first bent portion(321). An upper chassis(300) is integrally formed.

Abstract translation: 提供了一种用于平板显示装置的底盘和具有该底盘的平板显示装置，以便于模制框架和底盘的紧固，并且通过在至少一个侧壁的一端具有紧固部件来加强紧固力 一个底盘 基板（310）具有开口区域。 多个侧壁（320）形成为从基板（310）延伸。 侧壁（320）包括形成为从基板（310）向一定方向延伸的第一弯曲部（321）和从第一弯曲部（321）延伸的面向基板 （310）。 紧固部分（330）形成在第二弯曲部分（323）的一端。 第一弯曲部分从基板（310）沿垂直方向延伸。 紧固部（330）形成为面对第一弯曲部（321）。 一体地形成上部底盘（300）。

公开(公告)号：KR100557989B1

公开(公告)日：2006-03-06

申请号：KR1019990048361

申请日：1999-11-03

Applicant: 삼성전자주식회사

Inventor： 김만수 ,  김병동 ,  신충환

IPC: H01L21/22

Abstract: 본 발명은 반도체 소자 제조용 종형 확산로에 관한 것으로서, 반응 가스의 주입에 따라 소정의 공정이 진행되도록 수직 방향으로 배치된 반응관과, 상기 반응관의 둘레에 내부를 가열시킬 수 있도록 구비된 히터부와, 상기 반응관의 내부에 삽입되어 복수의 웨이퍼를 적재시킬 수 있도록 상, 하부판 및 복수의 지지봉으로 이루어진 보트와, 상기 보트를 올려놓을 수 있는 보트 캡을 포함하는 반도체 소자 제조용 종형 확산로에 있어서, 상기 반응관, 상기 보트의 상, 하부판 그리고 상기 보트 캡은 웨이퍼의 플랫 존 부분으로 반응 가스의 집중적인 흐름이 이루어지지 않도록 상기 웨이퍼의 플랫 존 부분과 평행하는 수직면이 각 각 형성되고, 상기 히터는 적어도 그 내측면 부분에 웨이퍼의 전면에 걸쳐 균일한 온도를 작용시킬 수 있도록 웨이퍼의 플랫 존 부분과 평행한 수직면이 형성되는 것을 특징으로 한다.
따라서, 본 발명에 의하면 확산로의 주요 구성부들의 형상을 웨이퍼의 형상과 대응될 수 있게 변경하여 반응 가스의 유동(흐름) 및 온도의 분포 공간을 일정하게 유지시킬 수 있으므로 웨이퍼의 플랫 존 부분에 치우치지 않고 웨이퍼의 전면에 걸쳐 고르고 양호한 막질을 얻게 되고, 나아가 반도체 제조 공정의 신뢰성을 더욱 더 향상시킬 수 있다.

公开(公告)号：KR1020020096527A

公开(公告)日：2002-12-31

申请号：KR1020010035087

申请日：2001-06-20

Applicant: 삼성전자주식회사

Inventor： 김만수 ,  김병동 ,  박연식 ,  신충환

IPC: H01L21/00

Abstract: PURPOSE: A wireless remote control system for controlling a loader part of semiconductor fabrication equipment and a method for operating the same are provided to control a loader portion by using a wireless remote control method. CONSTITUTION: A wireless remote control system is installed at a loader portion(10) having a wire control system in order to control the loader portion(10) by using a wireless remote control method. The wireless remote control system is formed with a local controller(70) a wireless transmitting and receiving function and an RF(Radio Frequency) transmission and reception portion(60). The RF portion(60) is connected with a mechanical control portion(40) for controlling the loader portion(10) in order to provide a remote control signal to the mechanical control portion(40). The RF portion(60) has its own peculiar code to provide a receiving control command to the mechanical control portion(40). A plurality of devices having peculiar codes are controlled by using one local controller(70).

Abstract translation: 目的：提供一种用于控制半导体制造设备的装载机部分的无线遥控系统及其操作方法，以通过使用无线遥控方法来控制装载器部分。 构成：在具有线控制系统的装载器部分（10）上安装无线遥控系统，以便通过使用无线遥控方法来控制加载器部分（10）。 无线遥控系统由本地控制器（70），无线发射和接收功能和RF（射频）发射和接收部分（60）形成。 RF部分（60）与用于控制装载器部分（10）的机械控制部分（40）连接，以便向机械控制部分（40）提供遥控信号。 RF部分（60）具有其自己的特有代码，以向机械控制部分（40）提供接收控制命令。 通过使用一个本地控制器（70）来控制具有特殊代码的多个设备。

公开(公告)号：KR1020020087311A

公开(公告)日：2002-11-22

申请号：KR1020010026439

申请日：2001-05-15

Applicant: 삼성전자주식회사

Inventor： 김만수 ,  김병동 ,  박연식 ,  신충환

IPC: H01L21/22

Abstract: PURPOSE: A vertical diffusion furnace for semiconductor fabrication is provided to form uniformly thickness of layer formed between each region of a wafer by compensating a thermal loss of a lower end region of a boat. CONSTITUTION: A plurality of heater coils(22) are adhered on both sides of a heater(200). The heater coils are used for controlling temperature of the inside of the heater(200). A gas inlet portion(30) injects a gas to the inside of a reaction tube(24) through pipe arrangement installed on one side of the reaction tube(24). The gas outlet portion(32) exhausts the remaining gas from the reaction tube(24). The reaction tube(24) is formed by SiO2 or SiC. The reaction tube(24) is used for reacting a wafer with the gas. A boat(26) is used for transferring the wafer into the inside of the reaction tube(24). A boat cap(28) is adhered to a lower end portion of the boat(26).

Abstract translation: 目的：提供用于半导体制造的垂直扩散炉，以通过补偿船的下端区域的热损失来形成在晶片的每个区域之间形成的均匀厚度的层。 构成：多个加热器线圈（22）粘附在加热器（200）的两侧。 加热器线圈用于控制加热器（200）内部的温度。 气体入口部分（30）通过安装在反应管（24）的一侧上的管道装置将气体注入反应管（24）的内部。 气体出口部分（32）从反应管（24）排出剩余的气体。 反应管（24）由SiO 2或SiC形成。 反应管（24）用于使晶片与气体反应。 船（26）用于将晶片转移到反应管（24）的内部。 船帽（28）粘附到船（26）的下端部。

公开(公告)号：KR1020000013970A

公开(公告)日：2000-03-06

申请号：KR1019980033137

申请日：1998-08-14

Applicant: 삼성전자주식회사

Inventor： 유상철 ,  김만수

IPC: H01L21/30

Abstract: PURPOSE: A diffusion furnace for fabricating a semiconductor device is provided to easily attach and remove gas pipes for introducing a process gas to/from an exterior of a combustion pipe. CONSTITUTION: The furnace comprises the combustion pipe to which gas pipes are connected. External pipes is disposed on an exterior of the combustion pipe. The gas pipes are removably inserted into the exterior of the combustion pipe. The external pipe and the gas pipe are fixed utilizing a fix hole made of teflon whose heat-resistance and corrosion-resistance are excellent.

Abstract translation: 目的：提供一种用于制造半导体器件的扩散炉，用于容易地附接和去除用于向燃烧管外部引入工艺气体的气体管道。 构成：炉子包括与燃气管连接的燃烧管。 外部管道设置在燃烧管的外部。 燃气管可拆卸地插入到燃烧管的外部。 利用由聚四氟乙烯制成的固定孔，外部管道和气体管道的耐热性和耐腐蚀性优异。