公开(公告)号：KR1020020094222A

公开(公告)日：2002-12-18

申请号：KR1020010031073

申请日：2001-06-04

Applicant: 삼성전자주식회사

Inventor： 김병동 ,  류규복 ,  박연식 ,  신충환 ,  김만수

IPC: H01L21/8247

Abstract: PURPOSE: A method for manufacturing a stacked flash memory cell is provided to prevent a shift of threshold voltage of memory cells by enhancing a charge retention capability of a floating gate. CONSTITUTION: A gate oxide layer is formed on an active region of a semiconductor substrate(200). A structure sequentially stacked a floating gate, a dielectric film of ONO structure and a control gate are sequentially formed on a desired portion of the gate oxide(210-230). An oxide layer made of SiON is formed on the gate oxide layer including the stacked structure by an oxidation processing using N2O gas or NO gas as a source gas(240). An LDD(Lightly Doped Drain) region is formed in the substrate(250). After forming an insulating spacer at both sidewalls of the stacked structure(260), source and drain regions are formed(270).

Abstract translation: 目的：提供一种用于制造堆叠式闪存单元的方法，以通过增强浮动栅极的电荷保持能力来防止存储单元的阈值电压偏移。 构成：在半导体衬底（200）的有源区上形成栅氧化层。 在栅极氧化物（210-230）的期望部分依次形成依次层叠浮栅，ONO结构的电介质膜和控制栅的结构。 通过使用N2O气体或NO气体作为源气体（240）的氧化处理，在包括堆叠结构的栅极氧化物层上形成由SiON制成的氧化物层。 在基板（250）中形成LDD（轻掺杂漏极）区域。 在层叠结构（260）的两个侧壁处形成绝缘间隔物之后，形成源区和漏区（270）。

公开(公告)号：KR1020010055573A

公开(公告)日：2001-07-04

申请号：KR1019990056813

申请日：1999-12-11

Applicant: 삼성전자주식회사

Inventor： 김만수 ,  신충환 ,  박연식

IPC: H01L21/22

Abstract: PURPOSE: A vertical diffusion furnace for manufacturing a semiconductor device is provided to supply uniformly a gas to each wafer by forming an exhausting portion on a slot portion supporting the wafer. CONSTITUTION: A heater portion(50) forms an outer body. A reaction tube(60) is installed at an inside of the heater portion(50). The reaction tube(60) has an exhaust portion for exhausting a supplied gas. A boat(80) is installed at an inside of the reaction tube(60). The boat(80) has an upper plate(81), a lower plate(83), and a multitude of support bar(85). The support bars(85) are installed between the upper plate(81) and the lower plate(83). Slots for supporting edges of wafers are formed on the support bars(85). A guide path(85b) is formed on the boat(80) in order to guide a gas to the reaction tube(60). A boat cap(90) is formed to load the boat(80). A gas inflow path(91) is formed on the boat cap(90).

Abstract translation: 目的：提供一种用于制造半导体器件的垂直扩散炉，用于通过在支撑晶片的槽部上形成排气部分来均匀地供给每个晶片。 构成：加热器部分（50）形成外部主体。 反应管（60）安装在加热器部分（50）的内部。 反应管（60）具有用于排出供给气体的排气部。 船（80）安装在反应管（60）的内部。 船（80）具有上板（81），下板（83）和多个支撑杆（85）。 支撑杆（85）安装在上板（81）和下板（83）之间。 在支撑杆（85）上形成用于支撑晶片边缘的槽。 引导路径（85b）形成在船（80）上以引导气体到反应管（60）。 形成船盖（90）以装载船（80）。 在船帽（90）上形成有气体流入路径（91）。

公开(公告)号：KR100541050B1

公开(公告)日：2006-01-11

申请号：KR1020030050366

申请日：2003-07-22

Applicant: 삼성전자주식회사

Inventor： 유성원 ,  박연식

IPC: H01L21/205

CPC classification number: C23C16/45561 ,  C23C16/455 ,  C23C16/45557

Abstract: 반도체소자 제조설비를 제공한다. 이 반도체소자 제조설비는 밀폐된 소정공간이 마련된 반응로와, 반응로의 일측에 위치되며 선행공정을 수행한 웨이퍼가 로딩되는 로드부와, 반응로와 로드부 사이에 개재되며 반응로와 로드부 사이의 통로를 선택적으로 개폐시켜주는 게이트 밸브와, 반응로 내부를 히팅시켜주는 히터와, 반응로 내부를 공정에 필요한 적정압력으로 유지시켜주는 진공펌프와, 외부로부터 다수의 반응가스를 공급받아 이 다수의 반응가스를 각각 개별적으로 저장하는 가스저장부와, 가스저장부에 연결되며 가스저장부로부터 공급되는 다수의 반응가스를 일정혼합비율로 혼합해주는 가스혼합부와, 가스혼합부에 연결되며 가스혼합부에서 혼합된 반응가스를 반응로의 각 방향으로 공급해주는 적어도 2개이상의 혼합가스 공급배관 및, 혼합가스 공급배관 상에 설치되며 혼합가스 공급배관을 통해 공급되는 반응가스의 유량을 제어해주는 혼합가스 유량제어유닛을 포함한다.
반도체, 가스, 박막, 증착

公开(公告)号：KR1020020061943A

公开(公告)日：2002-07-25

申请号：KR1020010003067

申请日：2001-01-19

Applicant: 삼성전자주식회사

Inventor： 김병동 ,  류규복 ,  박연식 ,  신충환 ,  김만수

IPC: H01L21/336

Abstract: PURPOSE: A method for forming an oxide material layer in fabricating a semiconductor is provided to minimize a defect caused by particles, by minimizing generation of particles in forming oxide material layers of different thicknesses. CONSTITUTION: A predetermined portion of a silicon substrate(20) is defined to expose a predetermined portion of the silicon substrate. Ions including alkaline metal are implanted into a predetermined portion of the substrate to form an ion region in the substrate. The ion region of the substrate and a region except the ion region are continuously oxidized to form the first oxide material layer(22b) in the region except the ion region. The second oxide material layer(22a) is formed on the ion region through an active reaction caused by the ions implanted into the ion region, having a relatively thick thickness as compared with the first oxide material layer.

Abstract translation: 目的：提供一种在制造半导体时形成氧化物材料层的方法，通过最小化形成不同厚度的氧化物材料层中的颗粒的产生来最小化由颗粒引起的缺陷。 构成：硅衬底（20）的预定部分被限定为暴露硅衬底的预定部分。 将包含碱金属的离子注入到基板的预定部分中，以在基板中形成离子区域。 基板的离子区域和离子区域以外的区域被连续地氧化，在离子区域以外的区域中形成第一氧化物层（22b）。 第二氧化物层（22a）通过与注入到离子区域中的离子产生的活性反应在离子区域上形成，与第一氧化物层相比具有相对厚的厚度。

公开(公告)号：KR101375833B1

公开(公告)日：2014-03-18

申请号：KR1020070043025

申请日：2007-05-03

Applicant: 삼성전자주식회사

Inventor： 문창욱 ,  전중석 ,  이정현 ,  이내인 ,  박연식 ,  이화성 ,  이호 ,  조세영 ,  김석필

IPC: H01L29/786

CPC classification number: H01L29/66439 ,  B82Y10/00 ,  B82Y15/00 ,  H01L21/02365 ,  H01L21/02601 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/1033 ,  H01L29/66742 ,  H01L29/7839 ,  H01L29/78684 ,  H01L29/78696 ,  H01L51/426 ,  H01L2221/1094

Abstract: 본 발명은 게르마늄 나노로드를 구비한 전계효과 트랜지스터 및 그 제조방법에 관하여 개시한다. 개시된 전계효과 트랜지스터는, 기판 상에 형성된 게이트 절연물; 상기 게이트 절연물에 임베드되며, 상기 그 양단이 노출된 적어도 하나의 게르마늄 나노로드; 상기 게르마늄 나노로드의 양단과 각각 연결된 소스 전극 및 드레인 전극; 및 상기 게이트 절연물 상에서 상기 소스전극 및 드레인 전극 사이에 형성된 게이트 전극;을 구비하는 것을 특징으로 한다.

公开(公告)号：KR1020050011333A

公开(公告)日：2005-01-29

申请号：KR1020030050366

申请日：2003-07-22

Applicant: 삼성전자주식회사

Inventor： 유성원 ,  박연식

IPC: H01L21/205

CPC classification number: C23C16/45561 ,  C23C16/455 ,  C23C16/45557

Abstract: PURPOSE: A gas supply apparatus and a bit of semiconductor device manufacturing equipment using the same are provided to control exactly the flow rate of reaction gas supplied into a reaction furnace by using a flow rate control unit. CONSTITUTION: A bit of semiconductor device manufacturing equipment(100) includes a reaction furnace(110), a loader(140) at one side of the furnace, a gate valve(150) for opening/closing selectively a path between the furnace and the loader, a heater(160) for heating the inside of the furnace, a vacuum pump(180) for sustaining proper pressure in the furnace, a gas storage part(121), a gas mixer(124) for mixing a plurality of reaction gases supplied from the gas storage part with each other, at least two mixed gas supply lines(127,128) connected with the gas mixer, and a mixed gas flow rate control unit. The flow rate control unit is installed on the mixed gas supply lines to control the flow rate of the mixed gas. The flow rate control unit includes a flow rate control valve(130) and a mass flow meter(131) for measuring the flow rate of the mixed gas.

Abstract translation: 目的：提供一种气体供给装置和使用该气体供给装置的半导体装置制造装置，通过使用流量控制装置精确地控制供给反应炉的反应气体的流量。 一种半导体器件制造设备（100）包括反应炉（110），炉的一侧的装载机（140），用于选择性地开启/关闭炉和炉之间的路径的闸阀（150） 装载机，用于加热炉内部的加热器（160），用于在炉内保持适当压力的真空泵（180），气体储存部分（121），用于混合多个反应气体的气体混合器（124） 从气体存储部供给至少两个与气体混合器连接的混合气体供给管线（127,128）和混合气体流量控制单元。 流量控制单元安装在混合气体供给管线上以控制混合气体的流量。 流量控制单元包括用于测量混合气体的流量的流量控制阀（130）和质量流量计（131）。

公开(公告)号：KR1020000019930A

公开(公告)日：2000-04-15

申请号：KR1019980038288

申请日：1998-09-16

Applicant: 삼성전자주식회사

Inventor： 김병동 ,  박연식

IPC: H01L21/32

Abstract: PURPOSE: A method for forming active area of semiconductor device is provided to enhance the reliability of the semiconductor device by easily ensuring an active area to minimize the failure rate. CONSTITUTION: A method for forming active area of semiconductor device comprises a step sequentially a nitration film(14) and an oxidation film(16) on a semiconductor substrate(10) having a bottom film(12) previously formed, and a step performing photoresist etching process in order to ensure an active area. The oxidation film is formed by thermal oxidation process, CVD(chemical vapor deposition) process or heat treatment process.

Abstract translation: 目的：提供一种用于形成半导体器件的有源区的方法，通过容易地确保有效面积来最小化故障率来增强半导体器件的可靠性。 构成：用于形成半导体器件的有源区的方法包括在预先形成有底膜（12）的半导体衬底（10）上依次层叠硝化膜（14）和氧化膜（16）的步骤，以及进行光致抗蚀剂 蚀刻工艺，以确保活动区域。 氧化膜通过热氧化法，CVD（化学气相沉积）法或热处理法形成。

公开(公告)号：KR1020020096527A

公开(公告)日：2002-12-31

申请号：KR1020010035087

申请日：2001-06-20

Applicant: 삼성전자주식회사

Inventor： 김만수 ,  김병동 ,  박연식 ,  신충환

IPC: H01L21/00

Abstract: PURPOSE: A wireless remote control system for controlling a loader part of semiconductor fabrication equipment and a method for operating the same are provided to control a loader portion by using a wireless remote control method. CONSTITUTION: A wireless remote control system is installed at a loader portion(10) having a wire control system in order to control the loader portion(10) by using a wireless remote control method. The wireless remote control system is formed with a local controller(70) a wireless transmitting and receiving function and an RF(Radio Frequency) transmission and reception portion(60). The RF portion(60) is connected with a mechanical control portion(40) for controlling the loader portion(10) in order to provide a remote control signal to the mechanical control portion(40). The RF portion(60) has its own peculiar code to provide a receiving control command to the mechanical control portion(40). A plurality of devices having peculiar codes are controlled by using one local controller(70).

Abstract translation: 目的：提供一种用于控制半导体制造设备的装载机部分的无线遥控系统及其操作方法，以通过使用无线遥控方法来控制装载器部分。 构成：在具有线控制系统的装载器部分（10）上安装无线遥控系统，以便通过使用无线遥控方法来控制加载器部分（10）。 无线遥控系统由本地控制器（70），无线发射和接收功能和RF（射频）发射和接收部分（60）形成。 RF部分（60）与用于控制装载器部分（10）的机械控制部分（40）连接，以便向机械控制部分（40）提供遥控信号。 RF部分（60）具有其自己的特有代码，以向机械控制部分（40）提供接收控制命令。 通过使用一个本地控制器（70）来控制具有特殊代码的多个设备。

公开(公告)号：KR1020020087311A

公开(公告)日：2002-11-22

申请号：KR1020010026439

申请日：2001-05-15

Applicant: 삼성전자주식회사

Inventor： 김만수 ,  김병동 ,  박연식 ,  신충환

IPC: H01L21/22

Abstract: PURPOSE: A vertical diffusion furnace for semiconductor fabrication is provided to form uniformly thickness of layer formed between each region of a wafer by compensating a thermal loss of a lower end region of a boat. CONSTITUTION: A plurality of heater coils(22) are adhered on both sides of a heater(200). The heater coils are used for controlling temperature of the inside of the heater(200). A gas inlet portion(30) injects a gas to the inside of a reaction tube(24) through pipe arrangement installed on one side of the reaction tube(24). The gas outlet portion(32) exhausts the remaining gas from the reaction tube(24). The reaction tube(24) is formed by SiO2 or SiC. The reaction tube(24) is used for reacting a wafer with the gas. A boat(26) is used for transferring the wafer into the inside of the reaction tube(24). A boat cap(28) is adhered to a lower end portion of the boat(26).

Abstract translation: 目的：提供用于半导体制造的垂直扩散炉，以通过补偿船的下端区域的热损失来形成在晶片的每个区域之间形成的均匀厚度的层。 构成：多个加热器线圈（22）粘附在加热器（200）的两侧。 加热器线圈用于控制加热器（200）内部的温度。 气体入口部分（30）通过安装在反应管（24）的一侧上的管道装置将气体注入反应管（24）的内部。 气体出口部分（32）从反应管（24）排出剩余的气体。 反应管（24）由SiO 2或SiC形成。 反应管（24）用于使晶片与气体反应。 船（26）用于将晶片转移到反应管（24）的内部。 船帽（28）粘附到船（26）的下端部。

公开(公告)号：KR1020080097762A

公开(公告)日：2008-11-06

申请号：KR1020070043025

申请日：2007-05-03

Applicant: 삼성전자주식회사

Inventor： 문창욱 ,  전중석 ,  이정현 ,  이내인 ,  박연식 ,  이화성 ,  이호 ,  조세영 ,  김석필

IPC: H01L29/786

CPC classification number: H01L29/66439 ,  B82Y10/00 ,  B82Y15/00 ,  H01L21/02365 ,  H01L21/02601 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/1033 ,  H01L29/66742 ,  H01L29/7839 ,  H01L29/78684 ,  H01L29/78696 ,  H01L51/426 ,  H01L2221/1094

Abstract: The field effect transistor and a manufacturing method thereof are provided to increase the driving speed and decrease the driving voltage by equipping the germanium nano-rods in which the mobility is bigger than the silicon as a channel. The field effect transistor(100) includes the gate oxide(130) formed on the substrate(110); germanium nano-rods(140) in which both ends are exposed; the source electrode(151) and the drain electrode(152) connected with the both ends of the germanium nano-rods; the gate electrode(160) formed on the gate oxide between the source electrode and drain electrode. The germanium nano-rods are embedded in the gate oxide.

Abstract translation: 提供场效应晶体管及其制造方法以通过装配迁移率大于硅的锗纳米棒作为通道来提高驱动速度并降低驱动电压。 场效应晶体管（100）包括形成在基板（110）上的栅极氧化物（130）。 其中两端都露出的锗纳米棒（140） 所述源极电极和所述漏极电极与所述锗纳米棒的两端连接; 形成在源电极和漏电极之间的栅极氧化物上的栅电极（160）。 锗纳米棒嵌在栅极氧化物中。