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公开(公告)号：KR1020130056072A
公开(公告)日：2013-05-29
申请号：KR1020110121810
申请日：2011-11-21
Applicant: 삼성전자주식회사
CPC classification number: G11C16/04 , G11C11/5628 , G11C16/10 , G11C2211/5646
Abstract: PURPOSE: A method for programming a nonvolatile memory device is provided to detect an instantaneous power cutoff by reading a monitoring cell with a monitoring voltage of a preset voltage level when a data cell is programmed. CONSTITUTION: A nonvolatile memory device including a data cell and a monitoring cell is provided(S100). The data cell stores N bit data. The monitoring cell monitors whether the data cell is programmed with the N bit data. The data cell is firstly programmed when the monitoring cell is inhibited(S110). The monitoring cell is secondly programmed when the data cell is inhibited.
Abstract translation: 目的：提供一种用于编程非易失性存储器件的方法，用于通过在编程数据单元时以具有预设电压电平的监控电压读取监控单元来检测瞬时功率截止。 构成：提供包括数据单元和监视单元的非易失性存储装置（S100）。 数据单元存储N位数据。 监视单元监视数据单元是否用N位数据编程。 当监控单元被禁止时，首先对数据单元进行编程（S110）。 当数据单元被禁止时，监视单元被二次编程。
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公开(公告)号：KR1020130015643A
公开(公告)日：2013-02-14
申请号：KR1020110077748
申请日：2011-08-04
Applicant: 삼성전자주식회사
CPC classification number: G06F13/16 , G06F11/00 , G06F11/1048 , G06F11/1076 , G11C16/26 , G11C16/349
Abstract: PURPOSE: An operating method of a memory controller and a memory system including the memory controller are provided to reduce the maximum number of times of read retry operation for a storage area by calculating a time difference between a read operation and a program operation for the storage area of a nonvolatile memory. CONSTITUTION: An RTC(Real Time Clock) circuit(30-2) generates first and second RTC values in response to a clock signal. A microprocessor(30-1) controls a program for a nonvolatile memory of the first RTC value indicating a first view point. When read operation is performed, the microprocessor calculates a difference by using the first RTC value read from the nonvolatile memory and the second RTC value indicating a second view point. When read retry operation is performed, the microprocessor controls the reduction of the maximum number of times of the read retry operation by using the difference.
Abstract translation: 目的：提供包括存储器控制器的存储器控制器和存储器系统的操作方法，以通过计算存储区域的读取操作和程序操作之间的时间差来减小存储区域的重试操作的最大次数 非易失性存储器的区域。 构成：RTC（实时时钟）电路（30-2）响应于时钟信号产生第一和第二RTC值。 微处理器（30-1）控制指示第一视点的第一RTC值的非易失性存储器的程序。 当执行读取操作时，微处理器通过使用从非易失性存储器读取的第一RTC值和指示第二视点的第二RTC值来计算差值。 当执行读取重试操作时，微处理器通过使用差异来控制读取重试操作的最大次数的减少。
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公开(公告)号：KR1020150017848A
公开(公告)日：2015-02-23
申请号：KR1020130093956
申请日：2013-08-08
Applicant: 삼성전자주식회사
Abstract: 그룹 연결을 위한 이벤트를 감지하는 단계, 상기 그룹 연결을 위한 이벤트가 감지되면 그룹에 속해 있는지를 판단하는 단계, 상기 그룹에 속해 있는 경우 그룹 내 동작 모드를 판단하는 단계, 상기 판단된 그룹 내 동작 모드에 따라 그룹 정보 또는 단말 정보를 교환하고, 교환한 정보를 비교하는 단계, 상기 비교한 정보를 이용하여 상기 그룹 내 동작 모드에 따라 새 그룹을 생성하는 단계, 상기 새 그룹을 생성이 완료되면 상기 그룹 내 동작 모드에 따라 그룹 리셋(reset)을 통해 그룹을 연결하는 단계를 포함할 수 있다.
Abstract translation: 本发明的目的是提供一种用于直接连接到Wi-Fi的方法和装置，当感测到用于附加群组连接的事件时，能够扩展群组连接而不会丢失现有的连接。 用于直接连接到Wi-Fi的方法包括以下步骤：感测用于组连接的事件; 如果检测到用于组连接的事件，则确定终端是否属于组; 如果确定终端属于组，则确定组内的操作模式; 根据组内确定的操作模式交换组信息或终端信息，并比较交换的信息; 使用比较信息根据组内的操作模式生成新组; 如果生成新组完成，则根据组内的操作模式重新组合组，连接组。
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公开(公告)号：KR101826140B1
公开(公告)日：2018-03-22
申请号：KR1020110077748
申请日：2011-08-04
Applicant: 삼성전자주식회사
CPC classification number: G06F13/16 , G06F11/00 , G06F11/1048 , G06F11/1076 , G11C16/26 , G11C16/349
Abstract: 리드리트라이동작의최대회수를제어할수 있는메모리컨트롤러의동작방법이개시된다. 상기방법은불휘발성메모리의저장영역에데이터를프로그램하는프로그램동작이수행될때 상기프로그램동작이수행된시각을지시하는제1실시간클락값을상기불휘발성메모리에프로그램하는단계와, 상기저장영역에프로그램된상기데이터에대한리드동작이수행될때 상기불휘발성메모리로부터읽혀진상기제1실시간클락값과상기리드동작이수행된시각을지시하는제2실시간클락값을이용하여상기저장영역에대한정보를획득하는단계와, 상기저장영역에대한리드리트라이동작이수행될때 상기정보를이용하여상기리드리트라이동작의최대회수를감소시키는단계를포함한다.
Abstract translation: 公开了一种操作能够控制读取触发操作的最大数量的存储器控制器的方法。 该方法包括：当执行用于将数据编程到非易失性存储器存储区域中的编程操作时，将非易失性存储器中的第一实时时钟值编程为指示执行编程操作的时间， 关于存储区域的信息是使用从非易失性存储器读取的第一实时时钟值和指示当对数据执行读取操作时执行读取操作的时间的第二实时时钟值而获得的 并且当在存储区域上执行读取操作时减少使用该信息执行读取操作的最大次数。
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Patent Agency Ranking
公开(公告)号：KR101799765B1
公开(公告)日：2017-11-22
申请号：KR1020110121810
申请日：2011-11-21
Applicant: 삼성전자주식회사
CPC classification number: G11C16/04 , G11C11/5628 , G11C16/10 , G11C2211/5646
Abstract: 비휘발성메모리장치의프로그램방법이제공된다. 비휘발성메모리장치의프로그램방법은, N(여기서, N은자연수)비트데이터를저장할수 있는데이터셀과, 데이터셀이 N비트데이터로프로그램되었는지여부를모니터링할수 있는모니터링셀을포함하는비휘발성메모리장치를제공하고, 모니터링셀을인히빗(inhibit)시킨상태에서데이터셀을제1 프로그램하고, 데이터셀을인히빗시킨상태에서모니터링셀을제1 프로그램과다른제2 프로그램하는것을포함한다.
Abstract translation: 提供了一种对非易失性存储器件进行编程的方法。 用于非易失性存储装置的编程方法，N非易失性存储器，其包括可被监视是否（其中，N为自然数）的监视器单元位数据，可以存储，数据单元被编程以N位数据的数据单元 禁止监视单元对数据单元的第一次编程，并且禁止与数据单元不同的监视单元的第二次编程。
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公开(公告)号：KR1020130084901A
公开(公告)日：2013-07-26
申请号：KR1020120005837
申请日：2012-01-18
Applicant: 삼성전자주식회사
CPC classification number: G11C16/26 , G11C11/5635 , G11C11/5642 , G11C16/16 , G11C29/38
Abstract: PURPOSE: A flash memory system and a lead method of the flash memory system are provided to quickly and accurately correct a lead error, thereby reducing the overhead of the system. CONSTITUTION: In a wear-out table which consider each of the block of flash memory as an index, the selection index of the selection block is updated (S120). When the current request of the lead retry of the selection block is received, with reference to the lead retry table which corresponds to the wear-out included in the selection index, the lead level starting the lead retry of the selection block is determined (S140). [Reference numerals] (S120) Update the indexes for selected blocks in a wear-out degree table in which each block of a flash memory serves as an index; (S140) Set a reading level at which a reading re-try is initiated for a selected block based on a reading re-try table corresponding to a wear-out degree included in a selected index when a request for a reading re-try for the selected block is received
Abstract translation: 目的：提供闪存系统的闪存系统和引导方法，以快速准确地纠正引导误差，从而减少系统的开销。 构成：在将闪存的每个块作为索引的磨损表中，选择块的选择索引被更新（S120）。 当接收到对选择块的前导重试的当前请求时，参考与包括在选择索引中的磨损对应的引导重试表，确定开始选择块的前导重试的提前级别（S140 ）。 （S120）在闪存的各块作为指标的磨损程度表中更新所选择的块的索引; （S140）基于与所选择的索引中包含的磨损程度对应的读取重试表，设置对于所选择的块开始读取重试的读取级别，当对于所选择的块的读取重试请求 接收所选的块
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公开(公告)号：KR1020140115619A
公开(公告)日：2014-10-01
申请号：KR1020130030391
申请日：2013-03-21
Applicant: 삼성전자주식회사
Abstract: The present invention relates to a method and a device for controlling a call in an electronic device. At this time, the method for controlling a call in a first electronic device can include an operation which receives a call connection request from a second electronic device through a base station; an operation which checks the generation of a call conversion event with regard to a call connection request received from the second electronic device; and an operation which requires a call connection request received from the second electronic device is converted to a third electronic device when the call conversion event is generated.
Abstract translation: 本发明涉及一种用于控制电子设备中的呼叫的方法和设备。 此时，用于控制第一电子设备中的呼叫的方法可以包括通过基站从第二电子设备接收呼叫连接请求的操作; 关于从第二电子设备接收的呼叫连接请求来检查呼叫转换事件的生成的操作; 并且当生成呼叫转换事件时，需要从第二电子设备接收到的呼叫连接请求的操作被转换为第三电子设备。
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公开(公告)号：KR1020130034522A
公开(公告)日：2013-04-05
申请号：KR1020110098579
申请日：2011-09-28
Applicant: 삼성전자주식회사
CPC classification number: G11C11/5642 , G11C16/10 , G11C16/26 , G11C16/349
Abstract: PURPOSE: A method and apparatus for reading data in a nonvolatile memory device are provided to improve the reliability of an error correction operation by reducing the time of a read retry operation. CONSTITUTION: An error is corrected by receiving data read in a target page of a nonvolatile memory device(S11). If the error correction operation is failed, a read voltage level is reset when an R/B signal is in a preparation mode(S14). A random cache read command for the target page is outputted to the nonvolatile memory device(S15). The error is corrected by receiving data which is temporarily stored in a second register from the nonvolatile memory device(S16). If the error correction operation is completed, the nonvolatile memory device is reset and a read operation is finished(S21).
Abstract translation: 目的：提供一种用于在非易失性存储器件中读取数据的方法和装置，通过减少读取重试操作的时间来提高纠错操作的可靠性。 构成：通过接收在非易失性存储器件的目标页面中读取的数据来校正错误（S11）。 如果纠错操作失败，则当R / B信号处于准备模式时，读取电压电平被复位（S14）。 用于目标页面的随机高速缓存读取命令被输出到非易失性存储器件（S15）。 通过从非易失性存储器件接收临时存储在第二寄存器中的数据来校正错误（S16）。 如果纠错操作完成，则非易失性存储器件被复位并且读操作完成（S21）。
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公开(公告)号：KR1020020028456A
公开(公告)日：2002-04-17
申请号：KR1020000059479
申请日：2000-10-10
Applicant: 삼성전자주식회사
Inventor： 김성빈
IPC: H01L21/027
Abstract: PURPOSE: A method for circulating coolant of a stepper for fabricating a semiconductor is provided to maximize operating efficiency of the stepper, by sharing coolant circulated in an adjacent stepper even if an accident happens in a member for circulating coolant. CONSTITUTION: The coolant which maintains a temperature state set up in each stepper(20a,20b) for performing an exposure process, is circulated to maintain the temperature of the members at a predetermined state such that the members constitute the stepper when the exposure process is performed. When an accident happens in circulating the coolant, coolant circulated in a stepper adjacent to the stepper wherein the accident happens is shared to continuously maintain the temperature of the members constituting the abnormal stepper.
Abstract translation: 目的：提供一种用于循环用于制造半导体的步进器的冷却剂的方法，以便即使在用于循环冷却剂的构件中发生事故，共享在相邻步进器中循环的冷却剂来最大化步进器的操作效率。 构成：在每个步进器（20a，20b）中设置用于进行曝光处理的保持温度状态的冷却剂循环，以使部件的温度保持在预定状态，使得当曝光过程为 执行。 当循环冷却液时发生意外事故时，共享具有事故发生的与步进器相邻的步进器中循环的冷却剂，以连续地维持构成异常步进机构的构件的温度。
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