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公开(公告)号：KR1020110127480A
公开(公告)日：2011-11-25
申请号：KR1020100046987
申请日：2010-05-19
Applicant: 삼성전자주식회사
CPC classification number: G11C16/26 , G11C16/08 , G11C16/3427 , G11C2216/14
Abstract: PURPOSE: A semiconductor memory device and operation method thereof are provided to increase the data read performance by performing sensing operation of flash memory data and sensed data. CONSTITUTION: A flash memory(200) includes a page and even/odd bit lines. A memory controller(300) controls the flash memory. The flash memory discriminates the order of even/odd sensing corresponding to a sector that is received from the memory controller and performs the even/odd sensing according to an order of data.
Abstract translation: 目的：提供一种半导体存储器件及其操作方法，通过执行闪存数据和感测数据的检测操作来增加数据读取性能。 构成：闪存（200）包括页面和偶数/奇数位线。 存储器控制器（300）控制闪存。 闪速存储器鉴别与从存储器控制器接收到的扇区相对应的偶/奇检测的顺序，并根据数据顺序执行偶/奇检测。
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公开(公告)号：KR1020100011198A
公开(公告)日：2010-02-03
申请号：KR1020080072317
申请日：2008-07-24
Applicant: 삼성전자주식회사
CPC classification number: G11C11/5628 , G11C2211/5621 , G11C16/3459 , G11C16/0483 , G11C16/12 , G11C16/3404
Abstract: PURPOSE: A programming method of a non-volatile memory device is provided to reduce the threshold voltage distribution of a flash memory device by increasing a program time about each memory cell. CONSTITUTION: A plurality of a first memory cells are programmed to a first program state(ST1) according to the first test voltage. A plurality of a second memory cells are programmed to a second program state(ST2). The plurality of a first memory cells are programmed to the first program state according to a second test voltage higher than the first test voltage. A plurality of first memory cells and a plurality of a second memory cells are connected to the same word line. The first program state has a threshold voltage distribution higher than the second program state.
Abstract translation: 目的：提供非易失性存储器件的编程方法，以通过增加关于每个存储器单元的程序时间来减少闪存器件的阈值电压分布。 构成：根据第一测试电压将多个第一存储单元编程为第一编程状态（ST1）。 多个第二存储器单元被编程为第二编程状态（ST2）。 多个第一存储单元根据高于第一测试电压的第二测试电压被编程到第一编程状态。 多个第一存储单元和多个第二存储单元连接到相同的字线。 第一编程状态具有高于第二编程状态的阈值电压分布。
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公开(公告)号：KR1020140094170A
公开(公告)日：2014-07-30
申请号：KR1020130006567
申请日：2013-01-21
Applicant: 삼성전자주식회사
CPC classification number: G11C16/16 , G11C16/0483
Abstract: A memory system is provided. The memory system includes a flash memory which includes a first sub block and a second sub block which are different, wherein the second sub block is composed of only the free page; and a controller which erases the flash memory by the sub block unit and copies data of a valid page of the first sub block to the second sub block if a garbage collection is required.
Abstract translation: 提供了一种存储系统。 存储器系统包括闪存，其包括不同的第一子块和第二子块，其中第二子块仅由空闲页组成; 以及控制器，其通过子块单元擦除闪存，并且如果需要垃圾回收，则将第一子块的有效页的数据复制到第二子块。
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公开(公告)号：KR1020130084901A
公开(公告)日：2013-07-26
申请号：KR1020120005837
申请日：2012-01-18
Applicant: 삼성전자주식회사
CPC classification number: G11C16/26 , G11C11/5635 , G11C11/5642 , G11C16/16 , G11C29/38
Abstract: PURPOSE: A flash memory system and a lead method of the flash memory system are provided to quickly and accurately correct a lead error, thereby reducing the overhead of the system. CONSTITUTION: In a wear-out table which consider each of the block of flash memory as an index, the selection index of the selection block is updated (S120). When the current request of the lead retry of the selection block is received, with reference to the lead retry table which corresponds to the wear-out included in the selection index, the lead level starting the lead retry of the selection block is determined (S140). [Reference numerals] (S120) Update the indexes for selected blocks in a wear-out degree table in which each block of a flash memory serves as an index; (S140) Set a reading level at which a reading re-try is initiated for a selected block based on a reading re-try table corresponding to a wear-out degree included in a selected index when a request for a reading re-try for the selected block is received
Abstract translation: 目的：提供闪存系统的闪存系统和引导方法，以快速准确地纠正引导误差，从而减少系统的开销。 构成：在将闪存的每个块作为索引的磨损表中，选择块的选择索引被更新（S120）。 当接收到对选择块的前导重试的当前请求时，参考与包括在选择索引中的磨损对应的引导重试表，确定开始选择块的前导重试的提前级别（S140 ）。 （S120）在闪存的各块作为指标的磨损程度表中更新所选择的块的索引; （S140）基于与所选择的索引中包含的磨损程度对应的读取重试表，设置对于所选择的块开始读取重试的读取级别，当对于所选择的块的读取重试请求 接收所选的块
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Patent Agency Ranking
公开(公告)号：KR1020100045674A
公开(公告)日：2010-05-04
申请号：KR1020080104727
申请日：2008-10-24
Applicant: 삼성전자주식회사
CPC classification number: G11C16/16 , G11C16/344 , G11C16/3445 , G11C11/5635 , G11C16/30
Abstract: PURPOSE: An operation method of a non-voltage memory device is provided to reduce a voltage of erase pulse and the number of pulses by controlling the level of erase voltage which is applied to memory cells according to the level of a verification voltage. CONSTITUTION: A memory system comprises a non-volatile memory device(200) and a controller(100). The controller is connected to a host and a non-volatile memory device. The controller transfers data read from the non-volatile memory device to the host. The controller stores data delivered from the host in the non-volatile memory device. The controller comprises a RAM, a processing unit, a host interface, and a memory interface. The non-volatile memory device comprises a memory cell array, a read/write circuit, an address decoder, and a control logic.
Abstract translation: 目的：提供一种非电压存储器件的操作方法，通过根据验证电压的电平控制施加到存储器单元的擦除电压的电平来减小擦除脉冲的电压和脉冲数。 构成：存储器系统包括非易失性存储器件（200）和控制器（100）。 控制器连接到主机和非易失性存储设备。 控制器将从非易失性存储器设备读取的数据传送到主机。 控制器将从主机传送的数据存储在非易失性存储设备中。 控制器包括RAM，处理单元，主机接口和存储器接口。 非易失性存储器件包括存储单元阵列，读/写电路，地址解码器和控制逻辑。
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公开(公告)号：KR101826140B1
公开(公告)日：2018-03-22
申请号：KR1020110077748
申请日：2011-08-04
Applicant: 삼성전자주식회사
CPC classification number: G06F13/16 , G06F11/00 , G06F11/1048 , G06F11/1076 , G11C16/26 , G11C16/349
Abstract: 리드리트라이동작의최대회수를제어할수 있는메모리컨트롤러의동작방법이개시된다. 상기방법은불휘발성메모리의저장영역에데이터를프로그램하는프로그램동작이수행될때 상기프로그램동작이수행된시각을지시하는제1실시간클락값을상기불휘발성메모리에프로그램하는단계와, 상기저장영역에프로그램된상기데이터에대한리드동작이수행될때 상기불휘발성메모리로부터읽혀진상기제1실시간클락값과상기리드동작이수행된시각을지시하는제2실시간클락값을이용하여상기저장영역에대한정보를획득하는단계와, 상기저장영역에대한리드리트라이동작이수행될때 상기정보를이용하여상기리드리트라이동작의최대회수를감소시키는단계를포함한다.
Abstract translation: 公开了一种操作能够控制读取触发操作的最大数量的存储器控制器的方法。 该方法包括：当执行用于将数据编程到非易失性存储器存储区域中的编程操作时，将非易失性存储器中的第一实时时钟值编程为指示执行编程操作的时间， 关于存储区域的信息是使用从非易失性存储器读取的第一实时时钟值和指示当对数据执行读取操作时执行读取操作的时间的第二实时时钟值而获得的 并且当在存储区域上执行读取操作时减少使用该信息执行读取操作的最大次数。
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公开(公告)号：KR101799765B1
公开(公告)日：2017-11-22
申请号：KR1020110121810
申请日：2011-11-21
Applicant: 삼성전자주식회사
CPC classification number: G11C16/04 , G11C11/5628 , G11C16/10 , G11C2211/5646
Abstract: 비휘발성메모리장치의프로그램방법이제공된다. 비휘발성메모리장치의프로그램방법은, N(여기서, N은자연수)비트데이터를저장할수 있는데이터셀과, 데이터셀이 N비트데이터로프로그램되었는지여부를모니터링할수 있는모니터링셀을포함하는비휘발성메모리장치를제공하고, 모니터링셀을인히빗(inhibit)시킨상태에서데이터셀을제1 프로그램하고, 데이터셀을인히빗시킨상태에서모니터링셀을제1 프로그램과다른제2 프로그램하는것을포함한다.
Abstract translation: 提供了一种对非易失性存储器件进行编程的方法。 用于非易失性存储装置的编程方法，N非易失性存储器，其包括可被监视是否（其中，N为自然数）的监视器单元位数据，可以存储，数据单元被编程以N位数据的数据单元 禁止监视单元对数据单元的第一次编程，并且禁止与数据单元不同的监视单元的第二次编程。
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公开(公告)号：KR101468096B1
公开(公告)日：2014-12-04
申请号：KR1020080104727
申请日：2008-10-24
Applicant: 삼성전자주식회사
CPC classification number: G11C16/16 , G11C16/344
Abstract: 본발명의실시예에따른불휘발성메모리장치의동작방법은메모리셀들이검증패스될때까지검증전압을조절하며검증을수행하고, 메모리셀들이검증패스된때의검증전압의레벨에따라메모리셀들에인가될바이어스전압의레벨을조절하고, 조절된바이어스전압을메모리셀들에인가하는것을포함한다.
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