公开(公告)号：KR1020130012671A

公开(公告)日：2013-02-05

申请号：KR1020110073951

申请日：2011-07-26

Applicant: 삼성전자주식회사

Inventor： 김전호 ,  최철환 ,  이승태 ,  임용규 ,  김경태 ,  김재민

IPC: H01L21/3065 ,  H01L21/302 ,  H01L21/205

CPC classification number: C23C16/4405

Abstract: PURPOSE: A method for cleaning semiconductor device manufacturing equipment is provided to perform a cleaning process in the same chamber and the same temperature as a deposition process of silicon oxide, thereby effectively removing fluorine. CONSTITUTION: A film structure is deposited on a substrate(S110). Silicon oxide formed on the inner wall of a chamber is cleaned(S120). Silicon tetrafluoride gas and oxygen gas are discharged to the outside of the chamber through an exhaust line(S130). An organic compound source material is absorbed to the inner wall of the chamber(S140). The inside of chamber is purged by discharging the source gas remaining in the chamber(S150). Plasma is formed by supplying carrier gas to the inside of the chamber(S150). The inside of the chamber is purged by discharging silicon fluoride or hydrogen fluoride gas to the outside of the chamber(S160). [Reference numerals] (AA) Start; (BB) Is it repeated as specified cycle?; (CC) End; (S110) Deposition; (S120) Cleaning; (S130) Exhaust; (S140) Absorption; (S150,S170) Purge; (S160) Forming plasma

Abstract translation: 目的：提供一种用于清洁半导体器件制造设备的方法，以与氧化硅的沉积工艺相同的室和相同的温度进行清洁处理，从而有效地除去氟。 构成：将膜结构沉积在基板上（S110）。 在室的内壁上形成的氧化硅被清洁（S120）。 四氟化硅气体和氧气通过排气管排出到室外（S130）。 有机化合物源材料被吸收到室的内壁（S140）。 通过排出留在室中的源气体来净化室内（S150）。 通过将载气供给到室的内部形成等离子体（S150）。 通过将氟化硅或氟化氢气体排出到室的外部来清除室内（S160）。 （附图标记）（AA）开始; （BB）是否以指定周期重复？ （CC）结束; （S110）沉积; （S120）清洗; （S130）排气; （S140）吸收; （S150，S170）清洗; （S160）形成等离子体