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公开(公告)号：KR100475548B1
公开(公告)日：2005-03-10
申请号：KR1020010015884
申请日：2001-03-27
Applicant: 삼성전자주식회사
IPC: C08G77/00
Abstract: 본 발명은 하기 화학식 1a, 1b 또는 1c의 구조를 갖는 케이지형 실록산 화합물과 하기 화학식 2의 구조를 갖는 환형 실록산 화합물 또는 하기 화학식 3의 구조를 갖는 실란 화합물을 유기용매 중에서 산촉매의 존재하에 가수분해 및 축합중합시켜 제조된 실록산계 수지, 및 이를 이용한 반도체 층간 절연막의 형성방법에 관한 것으로, 본 발명의 실록산계 수지를 이용하면 고집적도 반도체 제조시 저유전율의 절연막을 용이하게 형성할 수 있다.
[화학식 1a]
[화학식 1b]
[화학식 1c]
[화학식 2]
[화학식 3]
RSiX
1 X
2 X
3
상기 화학식에서,
R은 수소 원자, C
1 ~C
3 의 알킬기, C
3 ~C
10 의 환형알킬기 또는 C
6 ~C
15 의 아릴기이고; X
1 , X
2 및 X
3 는 각각 독립적으로 C
1 ~C
3 의 알킬기, C
1 ~C
10 의 알콕시기 또는 할로겐 원자이며; p는 3 내지 8의 정수이고; m은 1 내지 10의 정수이며; n은 1 내지 12의 정수임.-
Patent Agency Ranking
公开(公告)号：KR1020020075669A
公开(公告)日：2002-10-05
申请号：KR1020010015884
申请日：2001-03-27
Applicant: 삼성전자주식회사
IPC: C08G77/00
Abstract: PURPOSE: Provided are a siloxane-based resin, which can easily form an insulating film having low dielectric constant in producing highly integrated semiconductor, and a method for forming an interlayer insulating film of semiconductor by using the same. CONSTITUTION: The siloxane-based resin is produced by hydrolyzing a cage type siloxane compound having the structure of formula 1a, 1b or 1c, and a cyclic siloxane compound having the structure of formula 2, or a silane compound having the structure of formula 3: RSiX1X2X3, into organic solvent in the presence of an acid catalyst, and polycondensing the above compounds. In the formulae, R represents hydrogen atom, alkyl group of C1-C3, cyclic alkyl group of C3-C10, or aryl group of C6-C15; each of X1, X2 and X3 independently represents an alkyl group of C1-C3, alkoxy group of C1-C10, or halogen atom; p is an integer of 3-8; m is an integer of 1-10; and n is an integer of 1-12.
Abstract translation: 目的：提供一种硅氧烷类树脂，其可以容易地形成具有低介电常数的绝缘膜以制造高度集成的半导体，以及通过使用该半导体形成半导体的层间绝缘膜的方法。 构成：通过水解具有式1a，1b或1c结构的笼型硅氧烷化合物和具有式2结构的环状硅氧烷化合物或具有式3结构的硅烷化合物制备硅氧烷类树脂： RSiX1X2X3在酸催化剂存在下转化为有机溶剂，并缩聚上述化合物。 式中R代表氢原子，C1-C3烷基，C3-C10环烷基或C6-C15芳基; X1，X2和X3各自独立地表示C1-C3的烷基，C1-C10的烷氧基或卤素原子; p是3-8的整数; m为1-10的整数; n为1-12的整数。
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公开(公告)号：KR100455339B1
公开(公告)日：2004-11-06
申请号：KR1020020014259
申请日：2002-03-16
Applicant: 삼성전자주식회사
CPC classification number: H01L21/31695 , C08L5/16 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3124 , C08L2666/02
Abstract: The present invention provides a composition for preparing substances having nano-pores, said composition comprising cyclodextrin derivative, thermostable organic or inorganic matrix precursor, and solvent for dissolving said two solid components. There is also provided an interlayer insulating film having evenly distributed nano-pores with a diameter less than 50 ANGSTROM , which is required for semiconductor devices.
Abstract translation: 本发明提供了用于制备具有纳米孔的物质的组合物，所述组合物包含环糊精衍生物，热稳定的有机或无机基质前体和用于溶解所述两种固体组分的溶剂。 还提供了具有均匀分布的半导体器件所需的直径小于50埃的纳米孔的层间绝缘膜。
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公开(公告)号：KR1020020075720A
公开(公告)日：2002-10-05
申请号：KR1020020014259
申请日：2002-03-16
Applicant: 삼성전자주식회사
CPC classification number: H01L21/31695 , C08L5/16 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3124 , C08L2666/02
Abstract: PURPOSE: A composition for producing a material having nano-sized pores is provided, thereby providing a layer-insulation membrane with a pore size of 50 angstrom or less for a semiconductor. CONSTITUTION: The composition for producing a material having nano-sized pores comprises 0.1 to 95 wt.% of cyclodextrin derivative, a thermostable organic or inorganic matrix precursor; and 20 to 99.9 wt.% of a solvent dissolving the above substances, wherein the cyclodextrin derivative is represented by formula(6), in which R1, R2 and R3 are independently halogen, C0-C10 amino or azido, C3-C20 imidazole or pyridin, C1-C10 cyano, C2-C10 carbonate, C1-C10 carbamate or -OR4; R4 is hydrogen, C2-C3 acyl, C1-C2 alkyl, C3-C10 alkene, C3-C20 alkyne, C7-C20 tosyl, C1-C10 mesyl, C0-C10 phosphorus, C3-C10 cycloalkyl, C1-C20 carboxy alkyl, glucosyl, maltosyl or Sir1r2r3; r1, r2 and r3 are independently C1-C5 alkyl, C1-C5 alkoxy or C6-C20 aryl; and q is an integer of 6 to 12.
Abstract translation: 目的：提供一种用于制造具有纳米尺寸孔的材料的组合物，从而为半导体提供孔径为50埃或更小的层绝缘膜。 构成：用于生产具有纳米尺寸孔的材料的组合物包含0.1-95重量％的环糊精衍生物，耐热有机或无机基质前体; 和20至99.9重量％的溶解上述物质的溶剂，其中环糊精衍生物由式（6）表示，其中R 1，R 2和R 3独立地为卤素，C 0 -C 10氨基或叠氮基，C 3 -C 20咪唑或 吡啶，C 1 -C 10氰基，C 2 -C 10碳酸酯，C 1 -C 10氨基甲酸酯或-OR 4; R4是氢，C2-C3酰基，C1-C2烷基，C3-C10烯烃，C3-C20炔烃，C7-C20甲苯磺酰基，C1-C10甲磺酰基，C0-C10磷，C3-C10环烷基，C1-C20羧基烷基， 葡萄糖基，麦芽糖基或Sir1r2r3; r1，r2和r3独立地为C1-C5烷基，C1-C5烷氧基或C6-C20芳基; q为6〜12的整数。
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