公开(公告)号：KR1020120050338A

公开(公告)日：2012-05-18

申请号：KR1020100111780

申请日：2010-11-10

Applicant: 삼성전자주식회사

Inventor： 조용상 ,  강대림 ,  김성수 ,  남종익 ,  이근봉 ,  심혜원

IPC: H01L27/02

CPC classification number: H01L23/62 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PURPOSE: An electrical fuse using junction breakdown and a semiconductor integrated circuit including the same are provided to improve compatibility according to a changed process by using a junction structure which is not influenced by a process. CONSTITUTION: A second active region(120) is doped to a second impurity type. A first silicide film(141) is formed on a part of an upper end portion of a first active region(110). A second silicide film(142) is formed on a part of an upper end portion of the second active region. The second silicide film is formed to be separated from the first silicide film. First and second contacts(151,152) are respectively formed on the upper end of the first and the second silicide films.

Abstract translation: 目的：提供使用结击穿的电熔丝和包括其的半导体集成电路，以通过使用不受过程影响的结结构来改变根据改变的工艺的兼容性。 构成：将第二有源区（120）掺杂到第二杂质类型。 第一硅化物膜（141）形成在第一有源区（110）的上端部的一部分上。 第二硅化物膜（142）形成在第二有源区的上端部的一部分上。 第二硅化物膜形成为与第一硅化物膜分离。 第一和第二触点（151,152）分别形成在第一和第二硅化物膜的上端。