公开(公告)号：KR100431657B1

公开(公告)日：2004-05-17

申请号：KR1020010059323

申请日：2001-09-25

Applicant: 삼성전자주식회사

Inventor： 이광명 ,  다까기 ,  안재혁 ,  채승기 ,  김재욱

IPC: H01L21/3065

CPC classification number: H01L21/02046 ,  H01L21/31116 ,  H01L21/67109

Abstract: Disclosed are a method and an apparatus for processing a wafer in manufacturing a semiconductor device and a method and an apparatus for etching a material formed on the wafer, wherein first and second cooling parts adjust an ambient temperature near a plurality of wafers to a first temperature, the wafers are processed by introducing a reaction gas at the first temperature, then, a heating part rapidly raises the temperature of the atmosphere near the wafers from the first temperature to the second temperature to partially separate by-products produced during the processing, the second temperature is maintained to separate most of the by-products from the wafers, and the processing steps are implemented in-situ within the same space. Accordingly, a native oxide layer formed on several wafers can be etched and the reaction by-products can be removed in-situ in the same chamber so productivity is improved.

Abstract translation: 公开了一种用于在制造半导体器件中处理晶片的方法和设备以及用于蚀刻形成在晶片上的材料的方法和设备，其中第一和第二冷却部件将多个晶片附近的环境温度调整到第一温度 ，通过在第一温度下引入反应气体来处理晶片，然后，加热部分将晶片附近的气氛的温度从第一温度快速升高到第二温度，以部分地分离在处理期间产生的副产物， 保持第二温度以将大部分副产物与晶片分离，并且处理步骤在相同空间内原位实施。 因此，可以蚀刻在几个晶片上形成的自然氧化层，并且可以在同一室中原位去除反应副产物，从而提高生产率。

公开(公告)号：KR1020030026475A

公开(公告)日：2003-04-03

申请号：KR1020010059323

申请日：2001-09-25

Applicant: 삼성전자주식회사

Inventor： 이광명 ,  다까기 ,  안재혁 ,  채승기 ,  김재욱

IPC: H01L21/3065

CPC classification number: H01L21/02046 ,  H01L21/31116 ,  H01L21/67109

Abstract: PURPOSE: A method and an apparatus for processing a wafer and a method and an apparatus for etching a wafer are provided to improve productivity by etching easily natural oxides of plural wafers. CONSTITUTION: The first chamber(400) has a storage space(400a) for storing a plurality of wafers(W). The volume of the storage space(400a) corresponds to the volume of a boat(420) for loading 25 to 100 sheets of wafers. The second chamber(410) includes the first chamber(400). An inner face of the second chamber(410) and an outer face of the first chamber(400) face to each other. A vacuum adiabatic space(410a) is formed between the second chamber(410) and the first chamber(400). A wall of the first chamber(400) is thinner than the wall of second chamber(410) in thickness. A heating portion(430) is arranged at an inner circumference of the second chamber(410) in order to heat the storage space(400a) of the first chamber(400). The first coolant circulation line(440a) is used for cooling the first chamber(400). The second cooling portion is used for cooling directly the wafer(W) within the first chamber(400). A rotary portion(460) is installed on the first chamber(400) in order to rotate the boat(420). A reaction gas induction line(470) and an exhaust line(480) are connected with the first chamber(400). A load lock chamber(490) is installed at a lower portion of the first chamber(400). A transfer portion(500) is installed at a lower portion of the load lock chamber(490).

Abstract translation: 目的：提供一种用于处理晶片的方法和装置，以及用于蚀刻晶片的方法和装置，以通过蚀刻易于多个晶片的天然氧化物来提高生产率。 构成：第一室（400）具有用于存储多个晶片（W）的存储空间（400a）。 存储空间（400a）的体积对应于用于装载25至100张晶片的船（420）的体积。 第二室（410）包括第一室（400）。 第二室（410）的内表面和第一室（400）的外表面彼此面对。 在第二室（410）和第一室（400）之间形成真空绝热空间（410a）。 第一腔室（400）的壁厚度比第二腔室（410）的壁薄。 为了加热第一室（400）的储存空间（400a），加热部（430）配置在第二室（410）的内周。 第一冷却剂循环管线（440a）用于冷却第一室（400）。 第二冷却部分用于直接冷却第一室（400）内的晶片（W）。 旋转部分（460）安装在第一室（400）上以便使船（420）旋转。 反应气体诱导管线（470）和排气管线（480）与第一室（400）连接。 负载锁定室（490）安装在第一室（400）的下部。 传送部分（500）安装在负载锁定室（490）的下部。