公开(公告)号：KR1020070074905A

公开(公告)日：2007-07-18

申请号：KR1020060003017

申请日：2006-01-11

Applicant: 삼성전자주식회사

Inventor： 김인기 ,  이강윤 ,  김경환 ,  류성길

IPC: H01L21/304

Abstract: An apparatus for exhausting a cleaning solution is provided to stably perform a semiconductor fabricating process by preventing a back stream of the vapor generated from a cleaning solution used in cleaning a wafer when the wafer is dried. A cleaning solution used in cleaning a wafer is exhausted by a first exhaust pipe(120). The cleaning solution exhausted by the first exhaust pipe is stored in a tank(140). A gas injection part injects gas toward the tank to prevent the vapor generated from the cleaning solution from flowing back along the first exhaust pipe, connected to the first exhaust pipe. The cleaning solution can be collected in a bowl(110) connected to the first exhaust pipe.

Abstract translation: 提供一种用于排出清洗溶液的装置，以便当晶片被干燥时，通过防止从用于清洁晶片的清洁溶液产生的蒸气的背流来稳定地执行半导体制造过程。 用于清洁晶片的清洁溶液由第一排气管（120）排出。 由第一排气管排出的清洗溶液储存在罐（140）中。 气体注入部分向罐注入气体，以防止从清洗溶液产生的蒸汽沿连接到第一排气管的第一排气管回流。 清洁溶液可以收集在连接到第一排气管的碗（110）中。

公开(公告)号：KR100786700B1

公开(公告)日：2007-12-21

申请号：KR1020060066228

申请日：2006-07-14

Applicant: 삼성전자주식회사

Inventor： 김큰별 ,  김인기 ,  박대범 ,  류성길 ,  백승부 ,  김서현

IPC: H01L21/304

CPC classification number: H01L21/02057 ,  H01L21/67034

Abstract: A drying method and an apparatus for performing the same are provided to remove fully deionized water from a semiconductor substrate by suppressing a condensing effect of mixed gas. A first heating process is performed to form a mixed gas by heating a first drying fluid and a second drying fluid(S240). A second heating process is performed to heat the mixed gas in order to prevent condensation of the mixed gas(S250). A filtering process is performed to filter the mixed gas in order to remove impurities from the mixed gas(S260). A drying process is performed to dry the filtered and mixed gas(S270). The first drying fluid includes nitrogen gas. The second drying fluid includes isopropyl alcohol. The first drying fluid is preheated before the first heating process is performed.

Abstract translation: 提供一种干燥方法及其执行装置，通过抑制混合气体的冷凝效果从半导体衬底去除完全去离子水。 通过加热第一干燥流体和第二干燥流体来进行第一加热处理以形成混合气体（S240）。 进行第二加热处理以加热混合气体，以防止混合气体的冷凝（S250）。 进行过滤处理以过滤混合气体以从混合气体中除去杂质（S260）。 进行干燥处理以干燥过滤后的混合气体（S270）。 第一干燥流体包括氮气。 第二干燥流体包括异丙醇。 在进行第一加热处理之前，将第一干燥流体预热。