公开(公告)号：KR101660943B1

公开(公告)日：2016-09-29

申请号：KR1020100021832

申请日：2010-03-11

Applicant: 삼성전자주식회사

Inventor： 박윤동 ,  밀러다비드앤드류바클레이 ,  진영구 ,  조인성

IPC: H01L31/101 ,  H01L27/146

CPC classification number: H01L31/1804 ,  H01L31/107 ,  Y02E10/547 ,  Y02P70/521

Abstract: 본발명은근적외선다이폴안테나를이용하는실리콘광 검출기에대하여개시된다. 광검출기는반도체기판위에형성된실리콘영역, 실리콘영역을사이에두고암(arm)들이분리되어형성되고입사광을전기신호로생성하는다이폴안테나, 그리고다이폴안테나의수직방향으로배치되고실리콘영역을사이에두고분리되어형성된전극들을포함한다. 전극들에는임계바이어스전압을인가하여실리콘영역에서의애벌런치이득동작을일으킨다.

公开(公告)号：KR1020110093535A

公开(公告)日：2011-08-18

申请号：KR1020100021832

申请日：2010-03-11

Applicant: 삼성전자주식회사

Inventor： 박윤동 ,  밀러다비드앤드류바클레이 ,  진영구 ,  조인성

IPC: H01L31/101 ,  H01L27/146

CPC classification number: H01L31/1804 ,  H01L31/107 ,  Y02E10/547 ,  Y02P70/521

Abstract: PURPOSE: A near infrared ray detector, an image sensor using the same, and a semiconductor manufacturing method thereof are provided to form a silicon film whose thickness is 70nm, thereby obtaining a very quickly response feature. CONSTITUTION: A semiconductor area is formed on a substrate. An antenna(28) includes first and second arms on the substrate. The antenna includes the semiconductor area between the arms. First and second electrodes(30) are separated on the substrate wherein the semiconductor area is placed between the first and second electrodes. An avalanche gain is generated in the semiconductor area by applying a bias voltage to the electrodes.

Abstract translation: 目的：提供近红外线检测器，使用其的图像传感器及其半导体制造方法，以形成厚度为70nm的硅膜，从而获得非常快的响应特征。 构成：在基板上形成半导体区域。 天线（28）包括在基板上的第一和第二臂。 天线包括臂之间的半导体区域。 在衬底上分离第一和第二电极（30），其中半导体区域位于第一和第二电极之间。 通过向电极施加偏置电压，在半导体区域中产生雪崩增益。