公开(公告)号：KR1020040032318A

公开(公告)日：2004-04-17

申请号：KR1020020061404

申请日：2002-10-09

Applicant: 삼성전자주식회사

Inventor： 신경선 ,  정애용 ,  박호순 ,  김성옥 ,  이경숙

IPC: G01R31/26 ,  H01L21/66

Abstract: PURPOSE: A test method for improving an operation ratio of test equipment is provided to enhance the operation ratio of the test equipment by reducing a test idling period of time including a retest time, a loading time, and an unloading time. CONSTITUTION: The first lot is loaded by using a test handler(202). The first cycle test and the main item test are performed(204,206). In the main item test, two or more other lots are loaded. The other lots are merged with the first lot by inputting numbers and quantities of the other lots(208). The main item test for the first lot and the other lots is performed(210). A retest process for bad semiconductor devices is performed(212). The last cycle test is performed(214). The retest process is finished(216).

Abstract translation: 目的：提供一种用于提高测试设备的操作比的测试方法，通过减少测试空闲时间（包括重新测试时间，加载时间和卸载时间）来提高测试设备的操作比。 构成：第一批通过使用测试处理程序（202）加载。 执行第一次循环测试和主项目测试（204,206）。 在主要项目测试中，加载了两个或多个其他批次。 其他批次与第一批合并，输入其他批次的数量和数量（208）。 执行第一批和其他批次的主要项目测试（210）。 执行坏半导体器件的重新测试过程（212）。 执行最后一个循环测试（214）。 复验过程完成（216）。

公开(公告)号：KR1020040063244A

公开(公告)日：2004-07-14

申请号：KR1020030000593

申请日：2003-01-06

Applicant: 삼성전자주식회사

Inventor： 박종대 ,  박호순 ,  최영권

IPC: H01L21/31

Abstract: PURPOSE: A method for supplying oxygen on a wafer is provided to prevent resistance from being increased by an excessive supply of oxygen by gradually supplying oxygen in an RTA(rapid thermal annealing) process performed on a wafer. CONSTITUTION: Impurities are injected to a wafer to perform heat treatment processes during a stabilization interval(1), a temperature increasing interval(2), a temperature maintaining interval(3) and a temperature decreasing interval(4). Oxygen is supplied to the wafer only during the stabilization interval and the temperature increasing interval among the heat treatment processes.

Abstract translation: 目的：提供一种在晶片上供氧的方法，以通过在晶片上进行的RTA（快速热退火）工艺中逐渐提供氧气来防止由于过量供氧而增加电阻。 构成：在稳定区间（1），升温间隔（2），温度保持间隔（3）和温度降低间隔（4）期间，将杂质注入晶片进行热处理工艺。 只有在热处理过程中的稳定化间隔和升温间隔期间才将氧气供给到晶片。

公开(公告)号：KR1020060024656A

公开(公告)日：2006-03-17

申请号：KR1020040073477

申请日：2004-09-14

Applicant: 삼성전자주식회사

Inventor： 박호순 ,  김근재

IPC: H01L21/02 ,  F16L55/10

CPC classification number: H01L21/02 ,  B01D46/0089 ,  E03B7/077 ,  H01L21/205

Abstract: 본 발명은 배관 내부에서 유체의 역류를 방지할 수 있는 역류 방지 장치가 설치된 배관을 구비하는 반도체 제조 장비를 개시한다. 상기 장비는 웨이퍼가 로딩되는 반응기; 상기 반응기에 연결된 공급관; 상기 반응기에 연결되는 배관; 상기 배관에 연결된 펌프; 및 상기 배관에 설치된 역류 방지 장치를 구비한다.
체크 밸브

公开(公告)号：KR1020050036628A

公开(公告)日：2005-04-20

申请号：KR1020030072340

申请日：2003-10-16

Applicant: 삼성전자주식회사

Inventor： 박호순

IPC: H01L21/22

Abstract: 보트의 슬롯 구조가 개선된 반도체 소자 제조용 종형로는 공정이 진행되는 공간을 갖는 본체와 본체를 가열하는 히팅유닛과 다수의 웨이퍼를 적재하여 본체의 내부에 인출입되며 그 상하단이 링에 의해 지지되는 다수개의 지지대 및 지지대에 가로질러 설치되어 웨이퍼의 저면을 받치는 안착부를 포함한다.

公开(公告)号：KR1020040021961A

公开(公告)日：2004-03-11

申请号：KR1020020053756

申请日：2002-09-06

Applicant: 삼성전자주식회사

Inventor： 방정호 ,  신경선 ,  박호순 ,  정애용

IPC: G01R31/28

Abstract: PURPOSE: A method for inspecting a semiconductor IC is provided to detect and remove an operational error of a test program by using an operating system to inspect a test device. CONSTITUTION: A method for inspecting a semiconductor IC includes a connection process, a compiling process, and an execution process. The connection process is to connect a test device to a host(S10). The compiling process is to compile a test program of the test device by using a complier of the host(S20). The complied test program of the test device is executed within the host(S30). The host includes an operating system. In addition, the host performs the compiling process and the execution process for the test program.

Abstract translation: 目的：提供一种用于检查半导体IC的方法，通过使用操作系统来检测和去除测试程序的操作错误来检查测试装置。 构成：用于检查半导体IC的方法包括连接处理，编译处理和执行处理。 连接过程是将测试设备连接到主机（S10）。 编译过程是通过使用主机的编译器编译测试设备的测试程序（S20）。 测试装置的编制测试程序在主机内执行（S30）。 主机包括一个操作系统。 此外，主机执行测试程序的编译过程和执行过程。