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公开(公告)号:KR1020050034840A
公开(公告)日:2005-04-15
申请号:KR1020030070549
申请日:2003-10-10
Applicant: 삼성전자주식회사
IPC: H01L29/786
CPC classification number: H01L51/00 , H01L21/02118 , H01L21/02282 , H01L21/312 , H01L51/0002 , H01L51/0036 , H01L51/0039 , H01L51/0043 , H01L51/0516 , H01L51/0545
Abstract: Disclosed herein is an organic thin film transistor comprising a substrate, a gate electrode, an organic insulating layer, an organic active layer and source/drain electrodes, wherein the interface between the organic insulating layer and the organic active layer is of relief structure. According to the present invention, an organic thin film transistor of enhanced electric properties can be obtained regardless of the organic insulating materials used.
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公开(公告)号:KR101001471B1
公开(公告)日:2010-12-14
申请号:KR1020030070549
申请日:2003-10-10
Applicant: 삼성전자주식회사
IPC: H01L29/786
CPC classification number: H01L51/00 , H01L21/02118 , H01L21/02282 , H01L21/312 , H01L51/0002 , H01L51/0036 , H01L51/0039 , H01L51/0043 , H01L51/0516 , H01L51/0545
Abstract: 본 발명은 표면요철구조에 의해 향상된 전하 이동도를 갖는 유기박막 트랜지스터에 관한 것으로, 보다 상세하게는 기판, 게이트전극, 유기절연층, 유기반도체 활성층 및 소스/드레인 전극을 포함하는 유기박막 트랜지스터에 있어서, 상기 유기절연층과 유기반도체 활성층의 계면간에 표면요철구조가 형성된 것을 특징으로 하는 유기박막 트랜지스터에 관한 것이며, 본 발명에 의해 유기절연층의 소재에 상관없이 유기 TFT 소자의 전기적 특성을 향상시키는 방법을 제공할 수 있다.
유기박막 트랜지스터, 유기절연층, 유기반도체층, SRG(Surface Relief Grating), 표면요철구조, 전하 이동도-
公开(公告)号:KR1020040101801A
公开(公告)日:2004-12-03
申请号:KR1020030033609
申请日:2003-05-27
Applicant: 삼성전자주식회사
IPC: C08F220/04
CPC classification number: C08F220/18 , B29C47/0021 , B32B27/36 , B32B2333/04 , C08F220/06 , C08J5/18
Abstract: PURPOSE: Provided are an optical film having good thermal stability even without adding any cross-linking agents, and a manufacturing method thereof. CONSTITUTION: The optical film is manufactured by the method comprising the steps of dissolving a cholesteric ionomer represented by the formula 1 into an organic solvent, coating, and then drying or extrusion molding by heat. In the formula 1, each of R1, R2 and R3 is independently H or CH3, R4 is a structure substituted by a mesogenic group, R5 is a chiral substituent, R6 is H or a structure substituted by carboxy group, in which 1-99% of H or carboxy group is substituted by a monovalent or divalent metal salt such as salt of Na, K, Li, Ca, Mg, Co, Zn, Cu or Hg, m is 0.3-0.7, n is 0.1-0.29 and o is 0.01-0.6, provided that the sum of m, n and o is 1. The several sheets of such optical film are overlaid and are compressed to prepare a multi-layer cholesteric film.
Abstract translation: 目的:提供即使不添加交联剂也具有良好的热稳定性的光学膜及其制造方法。 构成:通过以下方法制造光学膜,该方法包括以下步骤:将由式1表示的胆甾型离聚物溶解在有机溶剂中,进行涂布,然后通过加热干燥或挤出成型。 在式1中,R 1,R 2和R 3各自独立地是H或CH 3,R 4是被介晶基团取代的结构,R 5是手性取代基,R 6是H或被羧基取代的结构,其中1-99 H或羧基的%被Na,K,Li,Ca,Mg,Co,Zn,Cu或Hg的一价或二价金属盐取代,m为0.3〜0.7,n为0.1-0.29,o 为0.01-0.6,条件是m,n和o的和为1.将这些光学膜的数张重叠并压缩以制备多层胆甾型薄膜。
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