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公开(公告)号：KR1020080038077A
公开(公告)日：2008-05-02
申请号：KR1020070134455
申请日：2007-12-20
Applicant: 삼성전자주식회사
IPC: H01L27/105 , G11B9/02
Abstract: A method for manufacturing a ferroelectric thin film and a method for manufacturing a ferroelectric recording medium are provided to increase recording density of the recording medium by forming uniform nano grains on the ferroelectric thin film. An amorphous TiO2 layer(12) is formed on a substrate(10). A PbO gas atmosphere(200) is formed on the TiO2 layer. The TiO2 layer is mixed with the PbO gas at a temperature between 400 and 800 °C. A PbTiO3 ferroelectric thin film is formed on the substrate. Nano grains with a size between 1 and 20 nm are formed on the PbTiO3 ferroelectric thin film. At least one of a reaction temperature and a reaction time of the TiO2 layer and the PbO gas and a flux of the PbO gas is controlled, such that the size of the nano grain and a stoichiometry of the PbTiO3 ferroelectric thin film are controlled.
Abstract translation: 提供一种制造铁电薄膜的方法和制造铁电记录介质的方法，以通过在铁电薄膜上形成均匀的纳米晶粒来提高记录介质的记录密度。 在基板（10）上形成无定形TiO 2层（12）。 在TiO 2层上形成PbO气氛（200）。 在400〜800℃的温度下，将TiO 2层与PbO气体混合。 在基板上形成PbTiO3铁电薄膜。 在PbTiO3铁电薄膜上形成尺寸为1至20nm的纳米晶粒。 控制TiO 2层和PbO气体的反应温度和反应时间中的至少一个以及PbO气体的流量，从而控制纳米晶粒的尺寸和PbTiO 3铁电薄膜的化学计量。
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公开(公告)号：KR1020080073589A
公开(公告)日：2008-08-11
申请号：KR1020070012369
申请日：2007-02-06
Applicant: 삼성전자주식회사
CPC classification number: G11B5/7325 , B82Y10/00 , G11B5/743 , G11B9/02 , G11B9/08 , G11B9/1472
Abstract: An information storage medium, a method of manufacturing the same, and an information storage apparatus are provided to trap electric charges by using conductive nanocrystal so as to secure high recording density more than 1Tb/in^2, and to form a recording layer at a low temperature. An information storage medium comprises a conductive layer(112), a lower insulating layer(114), a nanocrystal layer(120), and an upper insulating layer(124). The lower insulating layer is formed on the conductive layer. The nanocrystal layer, which is formed on the lower insulating layer, includes conductive nanocrystal(121) for trapping electric charges. The upper insulating layer is formed on the nanocrystal layer. The nanocrystal layer is formed with a monolayer or a multilayer.
Abstract translation: 提供信息存储介质，其制造方法和信息存储装置，以通过使用导电纳米晶体捕获电荷，以便确保高于1Tb / in ^ 2的高记录密度，并在 低温。 信息存储介质包括导电层（112），下绝缘层（114），纳米晶层（120）和上绝缘层（124）。 下绝缘层形成在导电层上。 形成在下绝缘层上的纳米晶层包括用于俘获电荷的导电纳米晶体（121）。 上绝缘层形成在纳米晶层上。 纳米晶层由单层或多层形成。
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公开(公告)号：KR1020090036462A
公开(公告)日：2009-04-14
申请号：KR1020070101667
申请日：2007-10-09
Applicant: 삼성전자주식회사
IPC: G01R33/00
CPC classification number: G11B9/02 , B82Y10/00 , G11B9/1409
Abstract: An electric field sensor with a vertical thin film structure is provided to control the density of foreign material accurately since there is no need of a diffusion process in forming a high resistance semiconductor layer. In a substrate(13), a low resistance semiconductor layer(10) in which impurity is doped to the high concentration is prepared in the top layer. The high resistance semiconductor layer(20) is located in the partial domain on the low resistance semiconductor layer. The impurity is doped to the low concentration, and a conductive layer(30) is located on the high resistance semiconductor layer. The change of the electric field is detected by the change of a current flowing through the low resistance semiconductor layer.
Abstract translation: 提供具有垂直薄膜结构的电场传感器，以便在形成高电阻半导体层时不需要扩散处理来精确地控制异物的密度。 在衬底（13）中，在顶层中制备杂质掺杂到高浓度的低电阻半导体层（10）。 高电阻半导体层（20）位于低电阻半导体层的部分域中。 杂质被掺杂到低浓度，并且导电层（30）位于高电阻半导体层上。 通过流过低电阻半导体层的电流的变化来检测电场的变化。
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Patent Agency Ranking
公开(公告)号：KR100858093B1
公开(公告)日：2008-09-10
申请号：KR1020070134455
申请日：2007-12-20
Applicant: 삼성전자주식회사
IPC: H01L27/105 , G11B9/02
Abstract: 결정성 및 표면거칠기(surface roughness) 특성이 우수하면서도 고기록 밀도의 데이터 저장성능을 가지는 강유전체 박막 및 상기 강유전체 박막을 포함한 강유전체 기록매체의 제조방법이 개시된다. 본 발명에 따른 강유전체 박막의 제조방법은, 기판 상에 비정질의 TiO
2 층을 형성하는 단계, 상기 TiO
2 층 상에 PbO 가스 분위기를 형성하는 단계 및 상기 TiO
2 층과 PbO 가스를 400℃ 내지 650℃의 온도범위에서 반응시켜 상기 기판 상에 1㎚ 내지 20㎚ 크기의 미세 결정립(grain) 구조를 갖는 PbTiO
3 강유전체 박막을 형성하는 단계를 포함한다.-
公开(公告)号：KR100813517B1
公开(公告)日：2008-03-17
申请号：KR1020060105269
申请日：2006-10-27
Applicant: 삼성전자주식회사
IPC: H01L27/105
Abstract: A method for fabricating a ferroelectric recording medium is provided to improve the data storage capabilities of a recording medium by forming a ferroelectric thin film having a grain structure that is no more than 5 nm and has a uniform size. An electrode layer of a conductive material is formed on a substrate(10). An amorphous TiO2 layer(12) is formed on the electrode layer. A PbO gas atmosphere(200) is formed on the TiO2 layer. The TiO2 layer is reacted with PbO gas in a temperature range of 400-800 ‹C to form a PbTiO3 ferroelectric thin film having a fine grain structure with a size of 1-20 nm. At least one of the reaction temperature and reaction time of the TiO2 layer and the PbO gas or the flux of the PbO gas is controlled to adjust the grain size or stoichiometry of the PbTiO3 ferroelectric thin film.
Abstract translation: 提供一种用于制造铁电记录介质的方法，通过形成具有不超过5nm的晶粒结构并具有均匀尺寸的铁电薄膜来提高记录介质的数据存储能力。 在基板（10）上形成导电材料的电极层。 在电极层上形成无定形TiO 2层（12）。 在TiO 2层上形成PbO气氛（200）。 在400-800℃的温度范围内，使TiO 2层与PbO气体反应，形成具有1-20nm的细晶粒结构的PbTiO 3铁电薄膜。 控制TiO 2层和PbO气体的反应温度和反应时间中的至少一个或PbO气体的流量以调节PbTiO 3铁电薄膜的晶粒尺寸或化学计量。
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公开(公告)号：KR101196795B1
公开(公告)日：2012-11-05
申请号：KR1020070101667
申请日：2007-10-09
Applicant: 삼성전자주식회사
IPC: G01R33/00
CPC classification number: G11B9/02 , B82Y10/00 , G11B9/1409
Abstract: 개시된 전기장 센서는 전기장 센서는, 최상층에 불순물이 고농도로 도핑된 저저항 반도체층이 마련된 기판과, 저저항 반도체층 위의 일부 영역에 위치되며 불순물이 저농도로 도핑된 고저항 반도체층과, 고저항 반도체층 위에 위치되는 도전층을 포함하여, 저저항 반도체층, 고저항 반도체층, 및 도전층을 통하여 흐르는 전류의 변화에 의하여 전기장의 변화를 검출한다.
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公开(公告)号：KR100905713B1
公开(公告)日：2009-07-01
申请号：KR1020070012369
申请日：2007-02-06
Applicant: 삼성전자주식회사
CPC classification number: G11B5/7325 , B82Y10/00 , G11B5/743 , G11B9/02 , G11B9/08 , G11B9/1472
Abstract: 나노결정을 이용한 정보저장매체 및 그 제조방법과, 정보저장장치가 개시된다. 개시된 정보저장매체는 도전층; 도전층 상에 형성되는 하부 절연층; 하부 절연층 상에 형성되는 것으로, 전하를 트랩(trap)할 수 있는 도전성의 나노결정들(nanocrystals)을 포함하는 나노결정층(nanocrystal layer); 및 나노결정층 상에 형성되는 상부 절연층;을 포함한다.
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公开(公告)号：KR100851982B1
公开(公告)日：2008-08-12
申请号：KR1020070018521
申请日：2007-02-23
Applicant: 삼성전자주식회사
IPC: H01L27/105 , B82Y10/00
CPC classification number: G11B9/02
Abstract: A ferroelectric information storage media and a method for manufacturing the same are provided to enhance magnetic information characteristics by reducing stress within a nano-dot crystal. A ferroelectric information storage media includes a substrate(10), a lower electrode(20) formed on the substrate, and a plurality of ferroelectric nano-dots(32) formed on the lower electrode. The ferroelectric nano-dots are isolated from each other to form one bit region. A size of each of the ferroelectric nano-dots is less than 15 nm. A ferroelectric nano-dots layer including the ferroelectric nano-dots is formed on the lower electrode. The ferroelectric nano-dots are made of one of ferroelectric materials including PbTiO3, KNbO3, and BiFeO3.
Abstract translation: 提供铁电信息存储介质及其制造方法，以通过减小纳米点晶体内的应力来增强磁信息特性。 铁电信息存储介质包括基板（10），形成在基板上的下电极（20）和形成在下电极上的多个铁电纳米点（32）。 铁电纳米点彼此隔离以形成一个位区域。 每个铁电纳米点的尺寸小于15nm。 在下电极上形成包含铁电纳米点的铁电纳米点层。 铁电纳米点由包括PbTiO 3，KNbO 3和BiFeO 3的铁电材料之一制成。
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