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公开(公告)号：KR100829565B1
公开(公告)日：2008-05-14
申请号：KR1020060097412
申请日：2006-10-02
Applicant: 삼성전자주식회사
IPC: H01L21/60
Abstract: A semiconductor probe having a wedge shape resistive tip and a method of fabricating the semiconductor probe is provided. The semiconductor probe includes a resistive tip that is doped with a first impurity, has a resistance region doped with a low concentration of a second impurity having an opposite polarity to the first impurity, and has first and second semiconductor electrode regions doped with a high concentration of the second impurity on both side slopes of the resistive tip. The probe also includes a cantilever having the resistive tip on an edge portion thereof, and an end portion of the resistive tip has a wedge shape.
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公开(公告)号：KR1020080040893A
公开(公告)日：2008-05-09
申请号：KR1020060108834
申请日：2006-11-06
Applicant: 삼성전자주식회사
IPC: H04N5/349
CPC classification number: H04N5/349
Abstract: A method and an apparatus for calibrating the position of an image sensor, and a method for detecting position of an image sensor are provided to calibrate and detect the image sensor position in sub-pixel unit and to improve the position sensing accuracy without installing additional position sensor by means of a simplified algorithm using symmetry distribution characteristic of cross correlation related to the image sensor position. The first image information corresponding to the first position of image sensor is gained(210) and the second image information corresponding to the second position of an image sensor is gained(240). The cross correlation value between the first image information and the second image information is calculated(250). The symmetry characteristic of the calculated cross correlation value is investigated(260). In case of existence of the symmetry characteristic, the driving power value of the image sensor for moving distance between the first and the second position is established as the standard driving power value for moving the image sensor in one pixel(280). The position of the image sensor is calibrated by using the established driving power value(290). In case of absence of the symmetry characteristic, the second position is changed by controlling the driving power value(270).
Abstract translation: 提供了用于校准图像传感器的位置的方法和装置以及用于检测图像传感器的位置的方法，用于校准和检测子像素单元中的图像传感器位置，并且在不安装附加位置的情况下提高位置感测精度 传感器通过使用与图像传感器位置相关的互相关的对称分布特性的简化算法。 获得对应于图像传感器的第一位置的第一图像信息（210），并且获得与图像传感器的第二位置相对应的第二图像信息（240）。 计算第一图像信息和第二图像信息之间的互相关值（250）。 研究了计算的互相关值的对称性特征（260）。 在存在对称特性的情况下，确定用于在第一和第二位置之间移动距离的图像传感器的驱动功率值作为在一个像素（280）中移动图像传感器的标准驱动功率值。 通过使用已建立的驱动功率值（290）校准图像传感器的位置。 在没有对称特性的情况下，通过控制驱动功率值（270）来改变第二位置。
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公开(公告)号：KR1020080038077A
公开(公告)日：2008-05-02
申请号：KR1020070134455
申请日：2007-12-20
Applicant: 삼성전자주식회사
IPC: H01L27/105 , G11B9/02
Abstract: A method for manufacturing a ferroelectric thin film and a method for manufacturing a ferroelectric recording medium are provided to increase recording density of the recording medium by forming uniform nano grains on the ferroelectric thin film. An amorphous TiO2 layer(12) is formed on a substrate(10). A PbO gas atmosphere(200) is formed on the TiO2 layer. The TiO2 layer is mixed with the PbO gas at a temperature between 400 and 800 °C. A PbTiO3 ferroelectric thin film is formed on the substrate. Nano grains with a size between 1 and 20 nm are formed on the PbTiO3 ferroelectric thin film. At least one of a reaction temperature and a reaction time of the TiO2 layer and the PbO gas and a flux of the PbO gas is controlled, such that the size of the nano grain and a stoichiometry of the PbTiO3 ferroelectric thin film are controlled.
Abstract translation: 提供一种制造铁电薄膜的方法和制造铁电记录介质的方法，以通过在铁电薄膜上形成均匀的纳米晶粒来提高记录介质的记录密度。 在基板（10）上形成无定形TiO 2层（12）。 在TiO 2层上形成PbO气氛（200）。 在400〜800℃的温度下，将TiO 2层与PbO气体混合。 在基板上形成PbTiO3铁电薄膜。 在PbTiO3铁电薄膜上形成尺寸为1至20nm的纳米晶粒。 控制TiO 2层和PbO气体的反应温度和反应时间中的至少一个以及PbO气体的流量，从而控制纳米晶粒的尺寸和PbTiO 3铁电薄膜的化学计量。
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公开(公告)号：KR1020080031084A
公开(公告)日：2008-04-08
申请号：KR1020060097412
申请日：2006-10-02
Applicant: 삼성전자주식회사
IPC: H01L21/60
Abstract: A semiconductor probe having a wedge-shaped resistive tip, and a method of fabricating the same are provided to increase the resolution of a resistance area by forming highly doped electrode areas on both sides of the resistance area of the resistive tip. A semiconductor probe comprises a resistive tip(150), and a cantilever(170). The resistive tip, doped by the first impurity, comprises a resistance area(156) which is doped by the second impurity, having an opposite polarity to that of the first impurity, in low concentration on its top portion, and has first and second semiconductor electrode areas(152,154) doped by the second impurity in high concentration on its inclined portion. The cantilever has the resistive tip on its edge portion. The end portion of the resistive tip is wedge-shaped and the length of the end portion of the tip is in a range of 20nm to 2mum.
Abstract translation: 提供具有楔形电阻端头的半导体探针及其制造方法，以通过在电阻尖端的电阻区域的两侧形成高度掺杂的电极区域来提高电阻区域的分辨率。 半导体探针包括电阻尖端（150）和悬臂（170）。 由第一杂质掺杂的电阻尖端包括由第二杂质掺杂的具有与第一杂质相反的极性的电阻区域（156），其顶部部分的浓度低，并且具有第一和第二半导体 在其倾斜部分上由高浓度的第二杂质掺杂的电极区域（152,154）。 悬臂在其边缘部分具有电阻尖端。 电阻尖端的端部是楔形的，并且尖端的端部的长度在20nm至2μm的范围内。
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公开(公告)号：KR1020080012061A
公开(公告)日：2008-02-11
申请号：KR1020060073048
申请日：2006-08-02
Applicant: 삼성전자주식회사
IPC: H04N5/349
CPC classification number: H04N1/3876 , G02B3/0056 , G02B5/201 , H01L27/14621 , H04N1/028 , H04N1/02805
Abstract: An image sensor for improving image quality and a method for sensing an image using the same are provided to change the position of a color filter by using the size of a conventionally used photoelectric semiconductor device and a color filter array, thereby improving the image quality of a sensed image without an increase of cost and the deterioration of sensing capabilities. An image sensor for improving image quality comprises a scanner unit(100), a color filter array(120) and a photoelectric semiconductor device(110). The scanner unit is movable on a plate. The color filter array is fixed on the scanner unit. The photoelectric semiconductor device has plural pixels arranged in the lower part of the color filter array. A microlens array(130) is additionally included in the image sensor. The microlens array is formed in the upper part of the color filter array corresponding to the pixels to concentrate light.
Abstract translation: 提供了一种用于提高图像质量的图像传感器和使用其的图像感测方法，以通过使用常规使用的光电半导体器件和滤色器阵列的尺寸来改变滤色器的位置，由此提高了图像质量 感测图像而不增加成本和感测能力的恶化。 用于提高图像质量的图像传感器包括扫描器单元（100），滤色器阵列（120）和光电半导体器件（110）。 扫描仪单元可在板上移动。 滤色器阵列固定在扫描仪单元上。 光电半导体器件具有布置在滤色器阵列的下部的多个像素。 图像传感器中另外包括微透镜阵列（130）。 微透镜阵列形成在与像素对应的滤色器阵列的上部以集中光。
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Patent Agency Ranking
公开(公告)号：KR1020080004769A
公开(公告)日：2008-01-10
申请号：KR1020060063480
申请日：2006-07-06
Applicant: 삼성전자주식회사
IPC: H01L27/146 , H04N1/028
Abstract: An image sensor having improved resolution and a method for sensing an image using the same are provided to improve image resolution by detecting the image as moving a photoelectric conversion semiconductor device fixed on a scanner unit. A scanner unit(100) moves on the plane. A photoelectric conversion semiconductor device(110) is mounted and fixed on the scanner unit. The photoelectric conversion semiconductor device has plural pixels arranged on the whole surface thereof. A color filter array(120) is arranged on the photoelectric conversion semiconductor device by corresponding to the pixel. A micro lens array(130) is formed on an upper portion of the color filter array by corresponding to the pixel to condense light. The scanner unit moves in horizontal and vertical directions. The scanner unit moves by an interval less than a distance from the pixel.
Abstract translation: 提供了具有改进的分辨率的图像传感器和用于感测使用其的图像的方法，以通过检测图像来移动固定在扫描仪单元上的光电转换半导体器件来提高图像分辨率。 扫描仪单元（100）在平面上移动。 光电转换半导体器件（110）安装并固定在扫描器单元上。 光电转换半导体器件具有布置在其整个表面上的多个像素。 滤色器阵列（120）通过与像素对应地布置在光电转换半导体器件上。 微透镜阵列（130）通过与像素对应而形成在滤色器阵列的上部以使光缩小。 扫描仪单元在水平和垂直方向上移动。 扫描仪单元移动距离像素小于距离的间隔。
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公开(公告)号：KR1020070082192A
公开(公告)日：2007-08-21
申请号：KR1020060014696
申请日：2006-02-15
Applicant: 삼성전자주식회사
IPC: H02K41/02
CPC classification number: G11B9/1436 , G01Q10/04 , G01Q80/00
Abstract: An X-Y stage driving apparatus having a locking device and a storage system having the same are provided to store or record high density information by precisely controlling a position of an X-Y stage without displacement expect required direction. An X-Y stage driving apparatus having a locking device includes an X-Y stage(20), a supporting unit, a driving unit, a stiffener(40), and a locking device(50). The supporting unit elastically supports the X-Y stage(20), and has an elastic beam which supports a corner of the X-Y stage(20). The driving unit drives the X-Y stage(20) to a first direction and a second direction which is perpendicular to the first direction. The stiffener(40) stops a rotation of the X-Y stage(20). The locking device(50) fixes the stiffener(40) by an electrostatic force. The locking device(50) has a first anchor, a plurality of first comb electrodes, and a plurality of second comb electrodes. The first anchor is arranged to be opposite to a side plane of the stiffener(40). The plurality of first comb electrodes are formed on an opposite plane of the stiffener(40). The plurality of second comb electrodes are arranged alternatively with the first comb electrodes on the opposite plane of the stiffener(40).
Abstract translation: 提供具有锁定装置和具有该锁定装置的存储系统的X-Y平台驱动装置，以通过精确地控制X-Y平台的位置而不需要所期望的方向来存储或记录高密度信息。 具有锁定装置的X-Y平台驱动装置包括X-Y平台（20），支撑单元，驱动单元，加强件（40）和锁定装置（50）。 支撑单元弹性地支撑X-Y平台（20），并且具有支撑X-Y平台（20）的角部的弹性梁。 驱动单元将X-Y平台（20）驱动到与第一方向垂直的第一方向和第二方向。 加强件（40）停止X-Y平台（20）的旋转。 锁定装置（50）通过静电力固定加强件（40）。 锁定装置（50）具有第一锚定器，多个第一梳状电极和多个第二梳状电极。 第一锚定件布置成与加强件（40）的侧面相对。 多个第一梳状电极形成在加强件（40）的相对平面上。 多个第二梳状电极与第一梳状电极交替地布置在加强件（40）的相对平面上。
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公开(公告)号：KR100718140B1
公开(公告)日：2007-05-14
申请号：KR1020050108294
申请日：2005-11-12
Applicant: 삼성전자주식회사
IPC: H01L21/66
Abstract: 반도체 탐침과 이를 이용한 기록재생방법이 개시된다. 개시된 반도체 탐침은 하부면에 전극층이 마련된 강유전성 매체에 정보를 기록 또는 기록된 정보를 재생하는 반도체 탐침으로서, 저항성 팁;과 매체와 대향하는 면에, 전극층과의 사이에 전압을 온, 오프 함으로써 매체와 팁 간의 접촉력을 조절하는 정전력 형성 전극부가 구비된 캔티레버;를 포함하는 것을 특징으로 한다. 또 개시된 기록재생방법은 본 발명에 의한 반도체 탐침을 이용하는 기록재생방법으로서, 매체의 전극층과 반도체 탐침의 정전력 형성 전극부간에 전압을 인가하여 매체와 팁간의 접촉력에 정전력을 포함되게 하는 기록단계;와 전극층과 정전력 형성 전극부간에 전압을 인가하지 않아 매체와 팁간의 접촉력에 정전력이 포함되지 않게 하는 재생단계; 를 포함하는 것을 특징으로 한다.
Abstract translation: 公开了一种半导体探针和使用其的记录/再现方法。 所公开的半导体探针是用于再现被记录在所述电极层或记录上设置铁电体介质的信息到下表面，电阻性尖端的信息的半导体探针;可以通过和一个面在面对介质介质，在电极层之间的电压，该关 并且具有用于调节尖端和尖端之间的接触力的静电力产生电极部分的悬臂。 还公开了记录和再现使用半导体探针被包含在记录和再现方法之间的接触力的静电力方法记录步骤，将电压施加在静电电极形成根据本发明的介质层的一部分和所述半导体探针介质和尖端之间施加 ;不将电压施加在电极层和所述静电电极形成用于再生步骤不包括恒定功率到介质和尖端之间的接触力部之间施加; [0015]
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公开(公告)号：KR100624434B1
公开(公告)日：2006-09-19
申请号：KR1020040071221
申请日：2004-09-07
Applicant: 삼성전자주식회사
IPC: H01L21/66
CPC classification number: G11B9/1409 , G01Q60/30 , Y10S977/875 , Y10S977/878 , Y10S977/879
Abstract: 저항성 팁을 구비한 반도체 탐침 및 그 제조방법이 개시된다. 개시된 제조방법은 제1불순물을 도핑한 기판의 상면에 스트라이프형의 마스크막을 형성하고, 상기 마스크막을 제외한 상기 기판의 영역에 제2불순물을 고농도로 도핑하여 제1 및 제2반도체 전극영역을 형성하는 단계와, 상기 기판을 열처리하여 상기 제1 및 제2 반도체 전극영역의 외곽에 상기 제2분순물이 저농도로 도핑된 저항영역을 형성하는 단계와, 상기 마스크막과 직교하는 방향으로 스트라이프 형상의 제1감광제를 형성하고, 식각공정을 수행하여 상기 마스크막을 사각형상으로 형성하는 단계와, 상기 제1감광제의 일부를 덮으며 캔티레버 영역을 한정하는 제2감광제를 형성하는 단계와, 상기 제1 및 제2감광제를 제외한 영역을 식각하여 상기 캔티레버 영역을 형성하는 단계와, 상기 제1 및 제2감광제를 제거하고, 상기 마스크막을 제외한 상기 기판을 식각하여 반사각뿔 형상의 저항성 팁을 형성하는 단계를 구비한다.
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公开(公告)号：KR100612884B1
公开(公告)日：2006-08-14
申请号：KR1020040117010
申请日：2004-12-30
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L27/105
Abstract: 자기 논리 소자와 그 제조 및 동작 방법이 개시되어 있다. 개시된 본 발명은 제1 배선 상에 적층되어 자기 분극 방향이 주어진 방향으로 고정된 하부 자성막과, 상기 하부 자성막 상에 적층된 비자성막과, 상기 비자성막 상에 적층되어 자기 분극 방향이 상기 하부 자성막의 자기 분극 방향과 동일하거나 반대인 상부 자성막과, 상기 상부 자성막 상에 형성된 제2 배선을 포함하는 것을 특징으로 하는 자기 논리 소자와 그 제조 및 동작 방법을 제공한다. 상기 제1 배선의 일단과 상기 제2 배선의 일단사이에 제1 전류원이 구비되고, 상기 제1 배선의 타단과 상기 제2 배선의 타단사이에 제2 전류원이 구비될 수 있다.
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