公开(公告)号：KR100802109B1

公开(公告)日：2008-02-11

申请号：KR1020060088285

申请日：2006-09-12

Applicant: 삼성전자주식회사

Inventor： 이주호 ,  박해석 ,  신제식 ,  송인상 ,  구명권 ,  신광재

IPC: H03H3/02 ,  H03H9/64

CPC classification number: H03H9/173 ,  H03H3/02 ,  H03H9/131 ,  H03H9/564 ,  H03H2003/021 ,  H03H2003/0471

Abstract: A resonator, an apparatus having the same, and a method for manufacturing the resonator are provided to improve a roll off characteristic of an electronic component by freely adjusting an effective piezoelectric thin film coefficient in a wide range. A resonator includes a substrate(110), a resonating unit(135), and first and second electrode layers(141,142). The resonating unit includes a lower electrode, a piezoelectric film, and an upper electrode which are sequentially laminated on the substrate. The first and second electrode layers are made of the same material with differential crystalline properties, so that a resonance piezoelectric thin film coefficient is adjusted. One of grain sizes or surface roughness properties is different in the first and second electrode layers.

Abstract translation: 提供一种谐振器，具有该谐振器的装置及其制造方法，用于通过在宽范围内自由调节有效的压电薄膜系数来提高电子部件的滚降特性。 谐振器包括基板（110），谐振单元（135）以及第一和第二电极层（141,142）。 谐振单元包括依次层压在基板上的下电极，压电膜和上电极。 第一和第二电极层由具有差分晶体性质的相同材料制成，从而调节谐振压电薄膜系数。 晶粒尺寸或表面粗糙度特性之一在第一和第二电极层中是不同的。