公开(公告)号：KR1020150015714A

公开(公告)日：2015-02-11

申请号：KR1020130091425

申请日：2013-08-01

Applicant: 삼성전자주식회사

Inventor： 이수호 ,  김수홍 ,  김정욱 ,  신대우

IPC: H01L21/205 ,  H01L21/683

CPC classification number: H01L21/6875 ,  C23C16/4583 ,  C23C16/46

Abstract: The present invention is to provide an apparatus for improving the temperature uniformity of a substrate in a process of depositing a layer on a substrate at a high temperature. A layer deposition apparatus according to an embodiment of the present invention includes: a chamber, at least one susceptor which is prepared in the chamber and includes at least three protrusion parts formed in a mounting part for mounting a wafer, and a heat source prepared to supply heat to the susceptor. The protrusion part is separated from the center of the susceptor. The separation distance is 1/3 or more of the radius of the wafer fixed to the upper part of the susceptor or 1/3 or more of the radius of the susceptor from the center of the susceptor.

Abstract translation: 本发明提供一种用于在高温下在基板上沉积层的工艺中改善衬底的温度均匀性的装置。 根据本发明实施例的层沉积装置包括：室，至少一个基座，其在腔室中制备并且包括形成在用于安装晶片的安装部分中的至少三个突出部分，以及准备好的热源 向感受器供应热量。 突出部分与基座的中心分离。 分离距离是固定在基座的上部的晶片的半径的1/3或更多，或者距离基座的中心的基座的半径的1/3以上。