Abstract:
A thermoelectric material having high efficiency, a thermoelectric element including the same, and a thermoelectric element module are provided. The thermoelectric reduces specific thermal conductivity by forming grain boundary ego density interface misfit potential between a thermoelectric matrix and a metal additive or thermoelectric grain in order to be used for various thermoelectric devices.
Abstract:
PURPOSE: A thermoelectric materials, a thermoelectric device and a method for manufacturing the same are provided to shift Fermi energy to a position where the effective mass of an electron increases, and improve thermoelectric performances. CONSTITUTION: Bi, Sb, M, Te, and Se are mixed to form a mixture of a preset composition ratio. The mixture is fused. The fused mixture is cooled to form an alloy of a preset composition. The alloy is pulverized. The pulverized alloy is sintered. The diameter of the pulverized alloy is 50 micron or less. [Reference numerals] (AA) Performance index, ZT; (BB) Temperature, T(K)
Abstract:
PURPOSE: A manufacturing method of a magnetocaloric material is provided to reduce heat-treatment temperature by using a halogenated metal as a metal source and to control the growth of magnetocaloric material particles. CONSTITUTION: A manufacturing method a magnetocaloric material comprises: a step(S110) of forming a mixture by mixing a source material of one or more metal selected from manganese halide, halide iron, B, Si, Ge, As, Sb and Te, phosphor and a reducing metal to form a mixture; a step(S120) of heat-treating the mixture; and a step(S130) of cooling the heat-treated mixture. The manganese halide is manganese chloride (II), manganese chloride (III), manganese bromide (II), manganese fluoride (III), manganese fluoride (IV) or manganese iodine (II). [Reference numerals] (S110) Mixture of mixing manganese halide, iron halide, phosphor, T, and reducing metals; (S120) Heating and melting the mixture at 750-1000°C; (S130) Cooling; (S140) Washing
Abstract:
하기일반식 1로나타내어지는 M 타입헥사페라이트를포함하는자성조성물이제공된다: [일반식 1] MAZnFeO여기서, M은 Sr, Ba, 및 Ca 로부터선택된 1종이상이고, A는 Sb, Mn, V, Nb, As, Ta, Cr, Mo, 및 W로부터선택된 1종이상이고, 0
Abstract:
주상(main phase)인 페라이트 결정립(crystal grain)과 보조상(auxiliary phase)인 연자성 금속이 원자 단위로 계면 접합되며, 상기 페라이트 결정립의 계면으로부터 인접된 영역에는 결정질 연자성 금속이 존재하는 연자성 자기결합교환 복합 구조체, 이를 포함한 고주파소자 부품, 안테나모듈 및 자기저항소자를 제공한다.
Abstract:
The purpose of the present invention is to provide a thermoelectric material having distorted electron state density by the substitution and doping of a transition metal. According to the present invention, the thermoelectric material having distorted electron state density increases a power factor and is used for various application such as the thermoelectric module, a thermoelectric device, etc. [Reference numerals] (AA) Comparative example 1
Abstract:
원료혼합물을얻는단계; 상기원료혼합물을 900도씨내지 1350도씨의온도에서하소하여, 하기일반식 1로나타내어지는 M-타입헥사페라이트또는하기일반식 2로나타내어지는 W-타입헥사페라이트를포함하는입자들을포함하는하소생성물을얻는단계; [일반식 1] ARFeMO여기서, A는 Sr, Ba, 및 Ca로부터선택된 1종이상이고, R은희토류원소로부터선택된 1종이상이고, M은 Co, Mn, Zn, Zr, Ni, Ti, Cu, Al, Ge, 및 As로부터선택된 1종이상이고, 0 ≤ x ≤ 0.6, 0 ≤ y ≤ 1.2 임; [일반식 2] AMeFeO여기서, A는 Sr, Ba, 및 Ca 로부터선택된선택된 1종이상이고, Me는 Co, Cu, Zn, Mn, ZrNi, Ti, Al, Ge, 및 As로부터선택된 1종이상이고, x 는 0 내지 2의수임; 상기하소생성물을 CoO, CoO, CoO, MnO, MnO, 및 BiO로부터선택된 1종이상의소결조제와혼합하여혼합물을얻는단계; 상기혼합물을압력하에성형하여성형체를얻는단계; 및상기성형체를 1000도씨내지 1300도씨의온도에서열처리하여소결자석을얻는단계를포함하는소결자석제조방법이제공된다.
Abstract translation:本发明涉及一种烧结磁体的制造方法。 根据本发明,提供了一种制造烧结磁体的方法,包括以下步骤:获得原料混合物; 通过在900〜1350摄氏度的温度下烧结原料混合物获得烧结产品; 通过将烧结产物与选自CoO,Co 2 O 4,Co 3 O 4,Mn 2 O 3,Mn 3 O 4和Bi 2 O 3中的一种或多种烧结助剂混合来获得混合物; 通过在压力下形成混合物获得成形体; 通过在1000〜1300℃的温度下对成形体进行热处理而获得烧结磁体。 本发明的一个实施方案涉及制造高密度和改善磁性的六铁氧体烧结磁体的方法。