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公开(公告)号：KR101581859B1
公开(公告)日：2016-01-21
申请号：KR1020090016867
申请日：2009-02-27
Applicant: 삼성전자주식회사
CPC classification number: G06F12/0246 , G06F2212/7201
Abstract: 본발명의실시예에따른, 플래시변환계층의데이터관리방법은, 입력데이터의크기를판별하는단계, 및상기판별결과로써상기입력데이터의크기가쓰기단위이면로그블록에저장하고, 상기입력데이터의크기가상기쓰기단위보다작으면파샬블록에저장하는단계를포함하되, 상기로그블록은동일한주소의데이터가저장되는임시블록이고, 상기파샬블록은주소에상관없이데이터가저장되는임시블록이다. 본발명의실시예에따른메모리시스템은, 비휘발성메모리, 및상기비휘발성메모리를제어하는메모리제어기를포함하되, 상기메모리제어기는쓰기단위보다작은입력데이터는주소가동일하지않더라도어느하나의메모리블록에임시로저장한다.
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公开(公告)号：KR1020130008300A
公开(公告)日：2013-01-22
申请号：KR1020110068967
申请日：2011-07-12
Applicant: 삼성전자주식회사
CPC classification number: G06F12/0246 , G06F2212/7205 , G11C16/3404 , G11C16/349
Abstract: PURPOSE: A flash memory device and an operating method thereof are provided to reduce erase operation time by skipping a copy back operation when data is erased. CONSTITUTION: A data erase request for one or more pages is received from the outside(S11). A logic page address of the erase requested page is changed into a physical page address(S12). A data pattern is generated to perform an over program(S13). A data pattern is controlled to change the threshold voltage distribution of the page by over-programming the data pattern in the page corresponding to the physical page address. [Reference numerals] (AA) No; (BB) Yes; (S11) Receiving a data erase request; (S12) Changing LPA into PPA; (S13) Generating a data pattern; (S14) Transmitting an over-program command; (S15) Correcting a mapping table; (S16) All LPA over-programmed?; (S17) Finishing the erase operation
Abstract translation: 目的：提供一种闪速存储器件及其操作方法，以在擦除数据时通过跳过复制操作来减少擦除操作时间。 构成：从外部接收到一页或多页的数据擦除请求（S11）。 擦除请求页面的逻辑页地址被改变为物理页地址（S12）。 生成数据模式以执行过程（S13）。 控制数据模式以通过对与物理页地址相对应的页面中的数据模式进行过度编程来改变页面的阈值电压分布。 （附图标记）（AA）否; （BB）是的; （S11）接收数据擦除请求; （S12）将LPA更改为PPA; （S13）生成数据模式; （S14）发送过程序命令; （S15）校正映射表; （S16）所有LPA过度编程？ （S17）完成擦除操作
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公开(公告)号：KR1020100097960A
公开(公告)日：2010-09-06
申请号：KR1020090016867
申请日：2009-02-27
Applicant: 삼성전자주식회사
CPC classification number: G06F12/0246 , G06F2212/7201
Abstract: PURPOSE: A memory system and a data managing method of a flash translation layer thereof are provided to improve the write performance by managing the input data through a different method according to the size of input data. CONSTITUTION: A memory controller(130) controls a non-volatile memory(140). In the case of a non-identical address, the memory controller temporally stores the input data lower than write unit at a memory block. If a memory block is filled up with the certain amount of data, the memory controller performs an incremental merge operation while avoiding timeout.
Abstract translation: 目的：提供闪存转换层的存储器系统和数据管理方法，以通过根据输入数据的大小的不同方法管理输入数据来提高写入性能。 构成：存储器控制器（130）控制非易失性存储器（140）。 在不相同的地址的情况下，存储器控制器将在写入单元的输入数据暂时存储在存储块中。 如果内存块填满了一定量的数据，则内存控制器会执行增量合并操作，同时避免超时。
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