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公开(公告)号：WO2013024914A1
公开(公告)日：2013-02-21
申请号：PCT/KR2011/006013
申请日：2011-08-17
CPC classification number: H01L33/405 , H01L33/44 , H01L2933/0016
Abstract: 본 발명은 일 측면은, 기판 위에 제1 및 제2 도전형 질화물 반도체층과, 그 사이에 위치하는 활성층을 포함하는 발광구조물을 형성하는 단계와, 기판 상에 제1 도전형 질화물 반도체층, 활성층 및 제2 도전형 질화물 반도체층을 순차적으로 형성하는 단계와, 상기 제1 도전형 질화물 반도체층과 연결되는 제1 전극을 형성하는 단계와, 상기 제2 도전형 질화물 반도체층 상에 상기 제2 도전형 질화물 반도체층의 일부 영역이 노출되는 포토레지스트막을 형성하는 단계 및 상기 포토레지스트막에 의하여 노출된 상기 제2 도전형 질화물 반도체층 위에 제2 전극 구조로서 반사 금속층 및 배리어 금속층을 연속으로 형성한 후 상기 포토레지스트막을 제거하는 단계를 포함하는 질화물 반도체 발광소자의 제조방법을 제공한다.
Abstract translation: 根据本发明的一个方面，提供一种用于制造由此制造的氮化物半导体发光器件和氮化物半导体发光器件的方法。 制造氮化物半导体发光器件的方法包括以下步骤：在衬底上形成第一和第二导电型氮化物半导体层，以在第一和第二导电型氮化物半导体层之间形成包括有源层的发光结构; 依次形成第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层; 形成连接到第一导电型氮化物半导体层的第一电极; 在所述第二导电型氮化物半导体层上形成光致抗蚀剂膜以暴露所述第二导电型氮化物半导体层的一部分; 并且在用作第二电极和阻挡层的反射金属层之后依次形成在由光致抗蚀剂膜暴露的第二导电型氮化物半导体层上，去除光致抗蚀剂膜。
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公开(公告)号：KR1020110121176A
公开(公告)日：2011-11-07
申请号：KR1020100040649
申请日：2010-04-30
Applicant: 삼성전자주식회사
IPC: H01L33/10
CPC classification number: H01L33/10 , H01L33/22 , H01L33/36 , H01L33/58 , H01L2924/12041 , H01L2933/0058
Abstract: PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to improve light extraction efficiency by inserting a bonding layer, which includes an air layer, in a semiconductor light emitting device. CONSTITUTION: A first conductive semiconductor layer(120) is formed on a reflective metal layer(110). A bonding layer is formed between the reflective metal layer and the first conductive semiconductor layer. The bonding layer includes an air layer(300) which is formed between a plurality of bonding metals(200). An active layer(130) is formed on the first conductive semiconductor layer. A second conductive semiconductor layer(140) is formed on the active layer.
Abstract translation: 目的：提供一种半导体发光器件及其制造方法，以通过将包括空气层的接合层插入半导体发光器件来提高光提取效率。 构成：第一导电半导体层（120）形成在反射金属层（110）上。 在反射金属层和第一导电半导体层之间形成接合层。 接合层包括形成在多个接合金属（200）之间的空气层（300）。 在第一导电半导体层上形成有源层（130）。 在有源层上形成第二导电半导体层（140）。
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公开(公告)号：KR1020110083290A
公开(公告)日：2011-07-20
申请号：KR1020100003449
申请日：2010-01-14
Applicant: 삼성전자주식회사
IPC: H01L33/10
CPC classification number: H01L33/10 , H01L33/0008 , H01L33/145 , H01L33/22 , H01L33/42 , H01L33/44 , H01L33/58 , H01L2924/12041 , H01L2933/0058
Abstract: PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to prevent metal elements from being spread into a reflection metal layer from an adhesive layer or a conductive substrate to increasing the reflectivity of the reflection metal layer, thereby increasing the light emitting efficiency of the light emitting device. CONSTITUTION: A reflection metal layer(14) is formed on one side of a first conductive semiconductor layer(13). The reflection metal layer includes a plurality of protrusions(20) protruded from the first conductive semiconductor layer. An active layer(12) is formed on another surface of the first conductive semiconductor layer. A second conductive semiconductor layer(11) is formed on the active layer. An n type electrode(18) is formed on the second conductive semiconductor layer.
Abstract translation: 目的：提供一种半导体发光器件及其制造方法，以防止金属元件从粘合层或导电基板扩散到反射金属层中，以增加反射金属层的反射率，从而提高发光效率 的发光装置。 构成：在第一导电半导体层（13）的一侧上形成反射金属层（14）。 反射金属层包括从第一导电半导体层突出的多个突起（20）。 在第一导电半导体层的另一表面上形成有源层（12）。 在有源层上形成第二导电半导体层（11）。 n型电极（18）形成在第二导电半导体层上。
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公开(公告)号：KR1020090018458A
公开(公告)日：2009-02-20
申请号：KR1020070082918
申请日：2007-08-17
Applicant: 삼성전자주식회사
IPC: H01L33/22 , H01S3/0941
Abstract: A nitride semiconductor device and a method for manufacturing the same are provided to lower an operating voltage by increasing an area of a quantum well structure of an active layer. A substrate(100) is provided. An n-type clad layer(120) is formed on the substrate. A surface unevenness(120a) is formed in an upper side of the n-type clad layer. An active layer(130) is formed on the surface unevenness of the n-type clad layer according to the profile of the surface unevenness. A p-type clad layer(140) is formed on the active layer. A transparent conductor layer(150) and a p type electrode(160) are successively formed on the p-type clad layer. The p-type clad layer and the active layer are partially removed by using the mesa etching. An n-type electrode(170) is formed on the n-type clad layer exposed by the mesa etching. The surface unevenness is formed with hemi spherical shape or the polygonal shape. A buffer layer(110) is formed in the interface between the substrate and the n type clad layer.
Abstract translation: 提供氮化物半导体器件及其制造方法，通过增加有源层的量子阱结构的面积来降低工作电压。 提供基板（100）。 在基板上形成n型覆盖层（120）。 在n型覆盖层的上侧形成有表面凹凸（120a）。 根据表面凹凸的轮廓，在n型覆盖层的表面凹凸上形成有源层（130）。 在有源层上形成p型覆层（140）。 在p型覆盖层上依次形成透明导体层（150）和p型电极（160）。 通过台面蚀刻部分去除p型覆盖层和有源层。 在通过台面蚀刻暴露的n型覆层上形成n型电极（170）。 表面凹凸形状为半球形或多边形。 在衬底和n型覆盖层之间的界面中形成缓冲层（110）。
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公开(公告)号：KR1020130104518A
公开(公告)日：2013-09-25
申请号：KR1020120026067
申请日：2012-03-14
Applicant: 삼성전자주식회사
IPC: H01L33/12
CPC classification number: H01L33/005 , H01L33/0079 , H01L33/0095 , H01L33/60
Abstract: PURPOSE: A method for manufacturing a semiconductor light emitting device is provided to improve a yield by preventing damage to a semiconductor layer. CONSTITUTION: A light emitting structure (120) includes a first conductive semiconductor layer (121), an active layer (122), and a second conductive semiconductor layer (123). The light emitting structure is formed on a growth substrate. A trench is formed on a part of the light emitting structure which is separated into an individual device unit with a depth not to expose the growth substrate. An insulation layer (130b) is formed on the inner surface of the trench on the surface of the light emitting structure. A support substrate (140) is formed on the light emitting structure. The growth substrate is separated from the light emitting structure. The light emitting structure is divided into each semiconductor light emitting device by cutting the light emitting structure. [Reference numerals] (AA) Razor
Abstract translation: 目的：提供一种制造半导体发光器件的方法，以通过防止对半导体层的损坏来提高产量。 构成：发光结构（120）包括第一导电半导体层（121），有源层（122）和第二导电半导体层（123）。 发光结构形成在生长衬底上。 在发光结构的一部分上形成沟槽，其被分离成具有不暴露生长衬底的深度的单独器件单元。 在发光结构的表面上的沟槽的内表面上形成绝缘层（130b）。 在发光结构上形成支撑基板（140）。 生长衬底与发光结构分离。 通过切割发光结构将发光结构分为每个半导体发光器件。 （附图标记）（AA）剃刀
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Patent Agency Ranking
公开(公告)号：KR1020110132159A
公开(公告)日：2011-12-07
申请号：KR1020100052016
申请日：2010-06-01
Applicant: 삼성전자주식회사
IPC: H01L33/14
CPC classification number: H01L33/14 , H01L33/0079 , H01L33/0095 , H01L33/36
Abstract: PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to block a leakage current path on the surface of a light emitting structure, thereby improving leakage current properties of the semiconductor light emitting device. CONSTITUTION: A light emitting structure(150) is arranged on a conductive substrate(160). The light emitting structure comprises a first conductive semiconductor layer(120), an active layer(130), and a second conductive semiconductor layer(140). A high resistance part(170) includes an ion implantation region arranged on at least a part of the surface of the second conductive semiconductor layer. A second conductive electrode(180) is arranged on the second conductive semiconductor layer.
Abstract translation: 目的：提供一种半导体发光器件及其制造方法，以阻止发光结构表面上的漏电流路径，从而提高半导体发光器件的漏电流特性。 构成：发光结构（150）布置在导电衬底（160）上。 发光结构包括第一导电半导体层（120），有源层（130）和第二导电半导体层（140）。 高电阻部分（170）包括布置在第二导电半导体层的表面的至少一部分上的离子注入区域。 第二导电电极（180）布置在第二导电半导体层上。
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公开(公告)号：KR1020090041179A
公开(公告)日：2009-04-28
申请号：KR1020070106760
申请日：2007-10-23
Applicant: 삼성전자주식회사
Abstract: A light emitting diode and a method for manufacturing the same are provided to increase a light emitting area maximally by removing a part covered with an electrode by forming a p electrode and an n electrode in a surface opposite to the light emitting surface of the unevenness surface. A light emitting laminate unit includes an n type nitride semiconductor layer(120), a p type nitride semiconductor layer, and an active layer(130) interposed between the semiconductor layers. The light emitting laminate unit includes a first surface(121), a second surface(141), and a side surface. The first surface is provided to an outer direction of the n type nitride semiconductor layer. The second surface is provided by the p type nitride semiconductor layer and is opposite to the first surface. The side surface is inclined to the n type nitride semiconductor layer and the p type nitride semiconductor with a predetermined angle. A reflective metal part(150) is formed in the second surface to contact the p type nitride semiconductor layer of the light emitting laminate unit. An insulating structure(160) is formed to surround the side surface of the light emitting laminate unit and the second surface with the highly reflective metal unit. A p electrode is connected to the highly refractive metal unit. An n electrode is connected to the n type nitride semiconductor layer.
Abstract translation: 提供一种发光二极管及其制造方法，通过在与凹凸表面的发光面相反的表面中形成p电极和n电极，通过去除覆盖有电极的部分来最大限度地增加发光面积。 发光层叠单元包括插入在半导体层之间的n型氮化物半导体层（120），p型氮化物半导体层和有源层（130）。 发光层叠单元包括第一表面（121），第二表面（141）和侧表面。 第一表面设置在n型氮化物半导体层的外侧。 第二表面由p型氮化物半导体层提供并且与第一表面相对。 侧表面以预定角度倾斜到n型氮化物半导体层和p型氮化物半导体。 反射金属部件（150）形成在第二表面中以与发光层压单元的p型氮化物半导体层接触。 绝缘结构（160）形成为围绕发光层叠单元的侧表面并且第二表面与高反射性金属单元包围。 p电极连接到高折射金属单元。 n电极与n型氮化物半导体层连接。
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公开(公告)号：KR1020110139909A
公开(公告)日：2011-12-30
申请号：KR1020100060016
申请日：2010-06-24
Applicant: 삼성전자주식회사
CPC classification number: H01L33/38 , H01L33/0079 , H01L33/382 , H01L33/40 , H01L33/44 , H01L2933/0016
Abstract: PURPOSE: A manufacturing method of a nitride semiconductor light emitting device and the nitride semiconductor light emitting device formed by the same are provided to deposit a reflection metal layer and a barrier metal layer in the p-type semiconductor layer at the same time through one photoresist process. CONSTITUTION: In a manufacturing method of a nitride semiconductor light emitting device and the nitride semiconductor light emitting device formed by the same, a light emitting structure is formed on a substrate(110). The light emitting structure comprises first and second conductive nitride semiconductor layer and an active layer. The active layer is interposed between the first and second conductive nitride semiconductor layer. A first conductive nitride semiconductor layer(120), an active layer(130), and a second conductive nitride semiconductor layer(140) are formed in the top of the substrate. The first electrode is connected to the first conductive nitride semiconductor layer. A photoresist film(150) is formed on the second conductive nitride semiconductor layer. A reflective metal layer(161) and a barrier metal layer(162) are formed on the second conductive nitride semiconductor layer. The photoresist film is removed.
Abstract translation: 目的：提供一种氮化物半导体发光器件和由其形成的氮化物半导体发光器件的制造方法，以通过一个光致抗蚀剂同时在p型半导体层中沉积反射金属层和阻挡金属层 处理。 构成：在氮化物半导体发光器件的制造方法和由其形成的氮化物半导体发光器件的制造方法中，在衬底（110）上形成发光结构。 发光结构包括第一和第二导电氮化物半导体层和有源层。 有源层介于第一和第二导电氮化物半导体层之间。 第一导电氮化物半导体层（120），有源层（130）和第二导电氮化物半导体层（140）形成在衬底的顶部。 第一电极连接到第一导电氮化物半导体层。 在第二导电氮化物半导体层上形成光致抗蚀剂膜（150）。 反射金属层（161）和阻挡金属层（162）形成在第二导电氮化物半导体层上。 除去光致抗蚀剂膜。
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公开(公告)号：KR1020110115795A
公开(公告)日：2011-10-24
申请号：KR1020100035319
申请日：2010-04-16
Applicant: 삼성전자주식회사
CPC classification number: H01L33/38 , H01L33/22 , H01L33/42 , H01L2933/0016
Abstract: 본 발명은 광추출 효율이 향상된 반도체 발광소자 및 그 제조방법에 관한 것으로, 보다 상세하게는 도전성 기판, 상기 도전성 기판 상에 형성된 제 1 도전형 반도체층, 상기 제 1 도전형 반도체층 상에 형성된 활성층, 상기 활성층 상에 형성된 제 2 도전형 반도체층 및 상기 제 2 도전형 반도체층 상에 형성되며 광출면에 요철이 구비된 투명전극을 포함하는 반도체 발광소자; 및 성장기판 상에 제 2 도전형 반도체층, 활성층 및 제 1 도전형 반도체층을 순차로 형성하는 단계, 제 1 도전형 반도체층 상에 도전성 기판을 형성하는 단계 및 상기 성장기판을 제 2 도전형 반도체층으로부터 분리하고 제 2 도전형 반도체층 상에 광출면에 요철이 구비된 투명전극을 형성하는 단계를 포함하는 반도체 발광 소자의 제조방법에 관한 것이다.
본 발명에 의하면 투명전극과 접하는 제 2 도전형 반도체층의 상에 1차 러프닝을 형성하여 굴절률 차이에 의한 빛의 트래핑(trapping) 현상을 개선하고, 출광면에 요철이 구비된 투명전극으로 전면 n형 전극을 형성하여 전극에 의해 빛이 차단되는 부분을 줄여 광추출 효율을 향상시킬 수 있다.-
公开(公告)号：KR1020110107618A
公开(公告)日：2011-10-04
申请号：KR1020100026846
申请日：2010-03-25
Applicant: 삼성전자주식회사
IPC: H01L33/22
CPC classification number: H01L33/22 , H01L33/0079 , H01L33/0095
Abstract: 본 발명은 광추출 효율을 향상시킬 수 있는 질화물 반도체 발광소자 및 그 제조방법에 관한 것으로서, 상기 질화물 반도체 발광소자는, 도전성 기판; 상기 도전성 기판 상에 형성된 p형 반도체층; 상기 p형 반도체층 상에 형성된 활성층; 및 상기 활성층 상에 형성되고, 상면에 형성된 요철패턴과, 상기 요철패턴의 표면에 형성된 다수의 돌기를 갖는 n형 반도체층;을 포함한다.
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