公开(公告)号：KR100667650B1

公开(公告)日：2007-01-12

申请号：KR1020050108440

申请日：2005-11-14

Applicant: 삼성전자주식회사

Inventor： 박대근 ,  오혁상 ,  정주혁 ,  유문재

IPC: H01L27/146

CPC classification number: H01L27/14625 ,  H01L27/1462 ,  H01L27/14636 ,  H01L27/14685

Abstract: An imaging device and its manufacturing method are provided to improve optical sensitivity by using a light opening unit pattern for collecting a light before being incident into a photo diode. Semiconductor devices including an optical device is formed on a substrate(100). A lower dielectric(130) is formed on the substrate and has an optical path groove(255) on an upper portion of the optical device. The optical path groove has a lower surface whose shape is convex upwardly to increase optical sensitivity of the optical device. An interlayer dielectric structure is formed on the lower dielectric to be extended to the lower optical path groove. A light opening unit(254) is formed on the interlayer dielectric structure. A light opening unit pattern(256) is formed to gap-fill the optical path groove and the light opening unit. A micro lens(310) is located on an upper portion of the light opening unit on the interlayer dielectric structure.

Abstract translation: 提供了一种成像装置及其制造方法，以通过使用在入射到光电二极管之前采集光的开启单元图案来提高光学灵敏度。 包括光学器件的半导体器件形成在衬底（100）上。 在基板上形成下电介质（130），在光学元件的上部具有光路槽（255）。 光路槽具有形状向上凸起的下表面，以提高光学装置的光学灵敏度。 在下电介质上形成层间电介质结构，延伸到下光路槽。 在层间电介质结构上形成开光单元（254）。 形成开口单元图案（256）以间隙地填充光路槽和光开启单元。 微透镜（310）位于层间电介质结构上的开孔单元的上部。

公开(公告)号：KR1020070068185A

公开(公告)日：2007-06-29

申请号：KR1020050130011

申请日：2005-12-26

Applicant: 삼성전자주식회사

Inventor： 유문재 ,  박대근

IPC: H01L21/205

CPC classification number: H01L21/67069 ,  H01J37/32357

Abstract: An apparatus for processing the surface of a wafer having a copper pattern using plasma is provided to reduce impurity particles and damage to a chamber and shorten an interval of process time by reducing thermal budget to a wafer and by performing a series of processes for forming a capping layer for protecting a copper pattern and cleaning a process chamber. A wafer(W) is processed in a process chamber(210). Gas is injected to the process chamber by a gas guide pipe(220). The gas introduced from the gas guide pipe is uniformly sprayed to the inside of the process chamber by a shower head(230). A heating block(240) on which a wafer is to be placed is installed in the process chamber. A plasma generating module(270) generates NH3 plasma outside the process chamber. The NH3 plasma generated from the plasma generating module is injected into the process chamber by a plasma guide pipe. The gas in the process chamber is exhausted to the outside by an exhaust pipe(250). The exhaust pipe is opened/shut by a valve(260). The plasma generating module can generate NF3 plasma additionally.

Abstract translation: 提供一种使用等离子体处理具有铜图案的晶片表面的装置，以通过减少对晶片的热量预算来减少杂质颗粒和损坏室并缩短处理时间的间隔，并且通过执行一系列用于形成 用于保护铜图案并清洁处理室的封盖层。 在处理室（210）中处理晶片（W）。 气体通过气体导管（220）注入处理室。 从气体引导管引入的气体通过淋浴喷头（230）均匀地喷射到处理室的内部。 其中放置晶片的加热块（240）安装在处理室中。 等离子体产生模块（270）在处理室外部产生NH 3等离子体。 由等离子体发生模块产生的NH 3等离子体通过等离子体导管注入到处理室中。 处理室中的气体通过排气管（250）排出到外部。 排气管由阀门（260）打开/关闭。 等离子体发生模块可以另外产生NF 3等离子体。