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公开(公告)号:KR1020060119437A
公开(公告)日:2006-11-24
申请号:KR1020050042475
申请日:2005-05-20
Applicant: 삼성전자주식회사
IPC: D06F39/04
Abstract: A drum-type washing machine is provided to prevent vibration and noise from being generated due to a defectively assembled heater by quickly and accurately fixing a heater with a heater bracket, to prevent a water tub from being injured or deformed due to heat, and to shorten the assembling time. A drum-type washing machine comprises a water tub(2) containing washing water; a heater bracket(40) installed on the bottom of the water tub adjacently to a backside board(2a) of the water tub; a guide rib(50) disposed between the heater bracket and the backside board of the water tub; a heater insertion hole(2b) formed on the backside board; and a heater(20) of which the front end is guided by the guide rib to be fixed with the heater bracket and of which the rear end is disposed at the outer side of the backside board.
Abstract translation: 提供滚筒式洗衣机,以通过快速且准确地将加热器与加热器支架固定在一起,防止由于热而使水桶受伤或变形,由于组装不良的加热器而产生振动和噪音,并且 缩短装配时间。 滚筒洗衣机包括一个含有洗涤水的水桶(2); 安装在水桶底部的加热器托架(40)与水槽的背面板(2a)相邻; 布置在所述加热器支架和所述水桶的所述背面板之间的引导肋(50); 形成在所述背面板上的加热器插入孔(2b) 以及加热器(20),其前端由导向肋引导以与加热器支架固定,并且其后端设置在背侧板的外侧。
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公开(公告)号:KR101903440B1
公开(公告)日:2018-10-02
申请号:KR1020120017413
申请日:2012-02-21
Applicant: 삼성전자주식회사
CPC classification number: G11C16/10 , G11C16/0483 , G11C16/3409 , H01L27/1157 , H01L27/11582
Abstract: 본발명에따른비트라인과제 1 노드사이에직렬연결된스트링선택트랜지스터들, 상기제 1 노드와제 2 노드사이에직렬연결된메모리셀들, 상기제 2 노드와공통소스라인사이에직렬연결된접지선택트랜지스터들을갖고, 기판위에수직방향으로형성된적어도하나의버티컬스트링을포함한비휘발성메모리장치에서접지선택트랜지스터의문턱전압조절방법은, 읽기동작시상기접지선택트랜지스터들중 제 1 접지선택트랜지스터의게이트에제 1 전압을제공하는단계, 및상기읽기동작시상기제 1 접지선택트랜지스터에직렬연결된제 2 접지선택트랜지스터의게이트에제 2 전압을제공하는단계를포함하는문턱전압조절한다.
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公开(公告)号:KR1020130095964A
公开(公告)日:2013-08-29
申请号:KR1020120017413
申请日:2012-02-21
Applicant: 삼성전자주식회사
CPC classification number: G11C16/10 , G11C16/0483 , G11C16/3409 , H01L27/1157 , H01L27/11582
Abstract: PURPOSE: A non-volatile memory device and a threshold voltage control method of a ground selection transistor thereof easily control a threshold voltage of the ground selection transistor by using the bias of a read operation. CONSTITUTION: An address decoder (130) generates a block selection signal by receiving an address. A block gating circuit (120) selects one of multiple memory blocks in response to the block selection signal. A control logic (150) controls a threshold voltage of one selected from first and second ground selection transistors by providing a first voltage to a gate of the first ground selection transistor among ground selection transistors and a second voltage to a gate of the second ground selection transistor among the ground selection transistors in a read operation.
Abstract translation: 目的:通过使用读取操作的偏置,其接地选择晶体管的非易失性存储器件和阈值电压控制方法容易地控制接地选择晶体管的阈值电压。 构成:地址解码器(130)通过接收地址产生块选择信号。 块选通电路(120)响应于块选择信号选择多个存储块中的一个。 控制逻辑(150)通过向地选择晶体管中的第一接地选择晶体管的栅极提供第一电压并且将第二电压提供给第二接地选择晶体管的栅极来控制从第一和第二接地选择晶体管选择的一个的阈值电压 在读取操作中的地选择晶体管中的晶体管。
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公开(公告)号:KR101857681B1
公开(公告)日:2018-05-14
申请号:KR1020110067478
申请日:2011-07-07
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L27/11551 , H01L27/11556 , H01L27/11578 , H01L27/11582
Abstract: 본발명은 3차원반도체기억소자및 그제조방법에관한것이다. 본발명의 3차원반도체기억소자는기판상에복수개의게이트들이수직적층되고상기게이트들을관통하는수직채널들을포함하는복수개의게이트스택들과, 상기복수개의게이트스택들사이에정의되고제1 영역과상기제1 영역보다큰 폭을가지는제2 영역을포함하는트렌치와, 상기트렌치에의해노출된기판에형성된공통소오스영역과, 상기트렌치의제2 영역에제공되어상기공통소오스영역과전기적으로연결되는복수개의플러그들과, 그리고상기복수개의플러그들과직접접촉되는스트랩핑라인을포함할수 있다.
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公开(公告)号:KR1020130007703A
公开(公告)日:2013-01-21
申请号:KR1020110067478
申请日:2011-07-07
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L27/11551 , H01L27/11556 , H01L27/11578 , H01L27/11582 , H01L21/823487 , H01L27/0207 , H01L27/0688
Abstract: PURPOSE: A 3D semiconductor memory device and a manufacturing method thereof are provided to reduce the number of a process by skipping the process for forming a metal contact. CONSTITUTION: Multiple gates are laminated on a substrate. Vertical channels pass through the gates. Multiple gate stacks(303) include the vertical channels. Trench trenches(345a,345b) are formed between the gate stacks. A strapping line(393) is directly contacted to multiple plugs.
Abstract translation: 目的:提供3D半导体存储器件及其制造方法,以通过跳过用于形成金属接触的工艺来减少工艺的数量。 构成:在基板上层叠多个栅极。 垂直通道通过门。 多个门堆叠(303)包括垂直通道。 沟槽沟槽(345a,345b)形成在栅极叠层之间。 捆扎线(393)与多个插头直接接触。
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公开(公告)号:KR1020090119566A
公开(公告)日:2009-11-19
申请号:KR1020080045686
申请日:2008-05-16
Applicant: 삼성전자주식회사
Abstract: PURPOSE: A washing machine is provided to generate weak water current and strong water current efficiently as a second pulsator rotates with a first pulsator and generates strong water current in case the first pulsator rotates over fixed angle. CONSTITUTION: A washing machine comprises a first pulsator(41), and a second pulsator(42). The first pulsator rotates with being delivered with torque. The second pulsator selectively rotates according to the rotation angle of the first pulsator. A rotary shaft is connected to the first pulsator and delivers the torque to the first pulsator. The second pulsator selectively rotates according to the rotation angle of the rotary shaft.
Abstract translation: 目的:提供一种洗衣机,当第一波轮与第一波轮一起旋转时,有效地产生弱水流和强水流,并在第一波轮旋转固定角度的情况下产生强水流。 构成:洗衣机包括第一波轮(41)和第二波轮(42)。 第一个脉动器随着转矩传递而旋转。 第二波轮根据第一波轮的旋转角度选择性地旋转。 旋转轴连接到第一波轮并将扭矩输送到第一波轮。 第二波轮根据旋转轴的旋转角度选择性地旋转。
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