公开(公告)号：KR1020060018374A

公开(公告)日：2006-03-02

申请号：KR1020040066720

申请日：2004-08-24

Applicant: 삼성전자주식회사

Inventor： 오준환 ,  김미영 ,  이정일

IPC: H01L21/28

CPC classification number: H01L21/76865 ,  H01L21/3212 ,  H01L21/76873

Abstract: 본 발명은 반도체 소자의 금속배선 형성방법에 관한 것이다. 본 발명에서는, 다마신 공정을 이용하여 금속배선을 형성함에 있어서, 웨이퍼의 에지 영역 및 베벨 영역에 존재하는 불필요한 물질막(시드 구리막, 베리어 메탈막, 캡핑막)을 각각 서로 다른 에천트가 적용되는 제1 습식 폴리싱 공정 및 제2 습식 폴리싱 공정을 통해 제거한다. 이러한 제1 습식 폴리싱 공정 및 제2 습식 폴리싱 공정을 통해 웨이퍼의 에지 영역 및 베벨 영역에 존재하는 불필요한 물질막들이 효과적으로 제거되어 반도체 소자의 전기적 특성이 향상된다. 그리고, 제1 습식 폴리싱 공정 및 제2 습식 폴리싱 공정을 통해 웨이퍼의 에지 영역 및 베벨 영역의 불필요한 물질막을 제거하는 본 발명에 따른 스트립 공정은 플랫형 웨이퍼의 경우에도 폭넓게 적용할 수 있어 별도의 설비 사용으로 인해 원가가 상승하는 문제 또한 해소할 수 있다.

반도체, 배선, 베벨(bevel), 스트립, 폴리싱

公开(公告)号：KR100442105B1

公开(公告)日：2004-07-27

申请号：KR1020010075864

申请日：2001-12-03

Applicant: 삼성전자주식회사

Inventor： 이정일 ,  후지하라카츠유키 ,  이내인 ,  배금종 ,  이화성 ,  김상수

IPC: H01L21/20

CPC classification number: H01L21/76254

Abstract: A method for forming SOI substrates including a SOI layer containing germanium and a strained silicon layer disposed on the SOI layer, comprises forming a relaxed silicon-germanium layer on a first silicon substrate using an epitaxial growth method, and forming a porous silicon-germanium layer thereon. A silicon-germanium epitaxial layer is formed on the porous silicon-germanium layer, an oxide layer is formed on a second silicon substrate, the second silicon substrate is bonded where the oxide layer is formed to the first silicon substrate where the silicon-germanium epitaxial layer is formed. Layers are removed to expose the silicon-germanium epitaxial layer and a strained silicon epitaxial layer is formed thereon. The porous silicon-germanium layer prevents lattice defects of the relaxed silicon-germanium layer from transferring to the silicon-germanium epitaxial layer. Therefore, it is possible to form the silicon-germanium layer and the strained silicon layer of the SOI layer without defects.

Abstract translation: 一种用于形成SOI衬底的方法，所述SOI衬底包括设置在SOI层上的包含锗的SOI层和应变硅层，所述方法包括使用外延生长方法在第一硅衬底上形成松弛硅 - 锗层，并且形成多孔硅 - 锗层 在其上。 在多孔硅 - 锗层上形成硅 - 锗外延层，在第二硅衬底上形成氧化物层，在形成氧化物层的地方将第二硅衬底键合到第一硅衬底上，其中硅 - 锗外延 层形成。 除去层以暴露硅锗外延层，并在其上形成应变硅外延层。 多孔硅 - 锗层防止松弛硅 - 锗层的晶格缺陷转移到硅 - 锗外延层。 因此，可以没有缺陷地形成SOI层的硅锗层和应变硅层。

公开(公告)号：KR1020030090881A

公开(公告)日：2003-12-01

申请号：KR1020020028480

申请日：2002-05-22

Applicant: 삼성전자주식회사

Inventor： 이정일 ,  배금종 ,  김기철 ,  이화성 ,  김상수

IPC: H01L27/12

CPC classification number: H01L21/76259 ,  H01L21/76254

Abstract: PURPOSE: A method for fabricating a silicon-on-insulator(SOI) semiconductor substrate is provided to prevent the impurities injected into a SOI layer from being diffused to a buried oxide layer or a semiconductor substrate by forming a diffusion barrier layer between the buried oxide layer and the SOI layer that are sequentially formed on the semiconductor substrate. CONSTITUTION: A porous silicon layer is formed on a support substrate. An epitaxial layer(105) and a diffusion barrier layer(115) are sequentially formed on the porous silicon layer. A buried oxide layer(155) is formed on a handle substrate(150). The diffusion barrier layer contacts the buried oxide layer and is bonded to the buried oxide layer. An etch process is performed on the support substrate with the diffusion barrier layer until the porous silicon layer is exposed. An etch process is performed on the porous silicon layer until the epitaxial layer is exposed. The diffusion barrier layer is made of an insulation layer whose impurities have low diffusivity as compared with the buried oxide layer. The epitaxial layer is the SOI layer.

Abstract translation: 目的：提供一种制造绝缘体上硅（SOI）半导体衬底的方法，以通过在掩埋氧化物之间形成扩散阻挡层来防止注入到SOI层中的杂质扩散到掩埋氧化物层或半导体衬底 层和SOI层，其顺序地形成在半导体衬底上。 构成：在支撑基板上形成多孔硅层。 在多孔硅层上依次形成外延层（105）和扩散阻挡层（115）。 掩埋氧化物层（155）形成在手柄基板（150）上。 扩散阻挡层与掩埋氧化物层接触并结合到掩埋氧化物层。 在具有扩散阻挡层的支撑衬底上进行蚀刻处理，直到暴露多孔硅层。 在多孔硅层上进行蚀刻处理，直到暴露外延层。 扩散阻挡层由与掩埋氧化物层相比杂质具有低扩散率的绝缘层制成。 外延层是SOI层。

公开(公告)号：KR1020030054776A

公开(公告)日：2003-07-02

申请号：KR1020010085186

申请日：2001-12-26

Applicant: 삼성전자주식회사

Inventor： 이정일 ,  정인순

IPC: H01L21/68

Abstract: PURPOSE: A control apparatus for wafer feeding of exposure equipment having an improved IC(integrated circuit) device connecting apparatus is provided to reduce unnecessary works by exchanging plural ICs without separating stacked printed circuit boards. CONSTITUTION: A control apparatus for wafer feeding of exposure equipment includes a plurality of printed circuit boards(21,23,25), a flat cable(35), an extended substrate(30), and the second sockets(37). The printed circuit boards include electric circuits to drive a motor for delivering a wafer. A couple of connectors(35a,35b) are connected to both ends of the flat cable. The extended substrate is installed at one side of the printed circuit board. A plurality of ICs(27a,27b,27c) for controlling the motor and the first sockets(31) are formed on the extended substrate. The first sockets are used for connecting the flat cable to the connector. The second sockets are installed on the printed circuit boards in order to be connected to the flat cable.

Abstract translation: 目的：提供一种用于具有改进的IC（集成电路）设备连接装置的曝光设备的晶片馈送的控制装置，以通过在不分离堆叠的印刷电路板的情况下交换多个IC来减少不必要的工作。 构成：用于曝光设备的晶片馈送的控制装置包括多个印刷电路板（21,23,25），扁平电缆（35），延伸基板（30）和第二插座（37）。 印刷电路板包括用于驱动用于输送晶片的电动机的电路。 一对连接器（35a，35b）连接到扁平电缆的两端。 延伸的基板安装在印刷电路板的一侧。 用于控制电动机和第一插座（31）的多个IC（27a，27b，27c）形成在延伸的基板上。 第一个插座用于将扁平电缆连接到连接器。 第二个插座安装在印刷电路板上，以便连接到扁平电缆。

公开(公告)号：KR1020030045936A

公开(公告)日：2003-06-12

申请号：KR1020010075864

申请日：2001-12-03

Applicant: 삼성전자주식회사

Inventor： 이정일 ,  후지하라카츠유키 ,  이내인 ,  배금종 ,  이화성 ,  김상수

IPC: H01L21/20

CPC classification number: H01L21/76254

Abstract: PURPOSE: A method for forming an SOI(strained silicon on Silicon-germanium On Insulator) substrate is provided to enhance the mobility of the current carrier by forming a strained silicon layer on a surface of an SOI layer including germanium. CONSTITUTION: A relaxed silicon germanium layer is formed on the first silicon substrate by using an epitaxial growth method. A porous silicon germanium layer is formed on the relaxed silicon germanium layer. A silicon germanium epitaxial layer(118) is formed on the porous silicon germanium layer. An oxide layer(122) is formed on the second silicon substrate(124). A front surface of the first silicon substrate and a front surface of the second substrate are adhered to each other. A silicon germanium epitaxial layer is formed by removing material layers from an upper portion of the porous silicon germanium layer. A strained silicon epitaxial layer(126) is formed on the silicon germanium epitaxial layer.

Abstract translation: 目的：提供一种用于形成SOI（硅 - 绝缘体上的应变硅）衬底的方法，以通过在包括锗的SOI层的表面上形成应变硅层来增强电流载流子的迁移率。 构成：通过使用外延生长法在第一硅衬底上形成松弛的硅锗层。 在松散的硅锗层上形成多孔硅锗层。 在多孔硅锗层上形成硅锗外延层（118）。 在第二硅衬底（124）上形成氧化物层（122）。 第一硅衬底的前表面和第二衬底的前表面彼此粘合。 通过从多孔硅锗层的上部去除材料层来形成硅锗外延层。 在硅锗外延层上形成应变硅外延层（126）。

公开(公告)号：KR100810348B1

公开(公告)日：2008-03-04

申请号：KR1020060131800

申请日：2006-12-21

Applicant: 삼성전자주식회사

Inventor： 박홍철 ,  이정일

IPC: H04B1/38

CPC classification number: H04B1/3816 ,  H04M1/0274

Abstract: A structure for preventing the separation of a SIM(Subscriber Identification Module) card in a slim portable terminal is provided to minimize the number of components and reduce the cost of production by forming at least one separation prevention member with a battery cover in a single unit, without the necessity of a special SIM card separation prevention device. A structure for preventing the separation of a SIM card(5) in a slim portable terminal consists of an inserting/ejecting part(20) and one or more than one separation prevention members(30). The inserting/ejecting part(20), formed at the rear side of a main body(1), is provided to insert or eject the SIM card(5). Corresponding with the inserting/ejecting part(20), the separation prevention members(30) are formed at the inner lateral of a battery cover(4). When the battery cover(4) is combined with the main body(1) in the state that the SIM card(5) is fixed to the inserting/ejecting part(20), the separation prevention members(30) prevents the SIM card(5) from being separated from the inserting/ejecting part(20) while contacting with the SIM card(5).

Abstract translation: 提供了一种用于防止在超薄便携式终端中分离SIM（用户识别模块）卡的结构，以通过在单个单元中形成具有电池盖的至少一个分离防止部件来最小化部件的数量并降低生产成本 ，而不需要特殊的SIM卡分离防护装置。 用于防止SIM卡（5）在细长便携式终端中分离的结构包括插入/弹出部分（20）和一个或多个分离防止部件（30）。 设置在主体（1）的后侧的插入/推出部（20）被插入或弹出SIM卡（5）。 与插入部（20）对应地，防电离部件（30）形成在电池盖（4）的内侧。 当SIM卡（5）固定在插入部（20）的状态下，当电池盖（4）与主体（1）组合时，防分离部件（30）防止SIM卡 5）在与SIM卡（5）接触的同时从插入/弹出部分（20）分离。

公开(公告)号：KR100790137B1

公开(公告)日：2008-01-02

申请号：KR1020060124721

申请日：2006-12-08

Applicant: 삼성전자주식회사

Inventor： 이정일 ,  박홍철

IPC: H04B1/38

CPC classification number: H04M1/0202

Abstract: A portable terminal equipped with a strap hole is provided to form a strap protrusion on one of cases which constitute a housing, and to enable the strap hole to pierce through the strap protrusion, thereby realizing a firm structure of combining an accessory. A housing is configured by combining a front case with a rear case(101b). A strap protrusion(111) is formed on one of the front case and the rear case(101b), and is located on an inner side of the other of the front case and the rear case. A strap hole(113) is formed by piercing through the strap protrusion(111). The strap protrusion(111) is equipped on the rear case(101b), while the strap hole(113) pierces through an external side of the rear case(101b) from one section of the strap protrusion(111).

Abstract translation: 提供配备有带孔的便携式终端，以在构成壳体的一个壳体上形成带突起，并且能够使带孔穿过带突起，从而实现组合附件的牢固结构。 通过将前壳体与后壳体（101b）组合来构造壳体。 在前壳体和后壳体（101b）中的一个上形成带突起（111），并且位于前壳体和后壳体中的另一个的内侧。 穿过带突起（111）形成带孔（113）。 带状突起（111）配备在后壳体（101b）上，而带孔（113）从带状突起（111）的一部分穿过后壳体（101b）的外侧。

公开(公告)号：KR1020060031179A

公开(公告)日：2006-04-12

申请号：KR1020040080086

申请日：2004-10-07

Applicant: 삼성전자주식회사

Inventor： 오준환 ,  이정일

IPC: H01L21/28

CPC classification number: H01L21/76883 ,  H01L21/3212 ,  H01L21/32134

Abstract: 반도체 장치의 구리 배선 형성 방법을 제공한다. 이 방법은 도전 패턴들을 구비하는 반도체기판 상에 도전 패턴들을 노출시키는 개구부들을 갖는 층간절연막 패턴을 형성하고, 상기 층간절연막 패턴 상에 개구부들을 채우는 제 1 구리막을 형성한 후, 상기 층간절연막 패턴 상에 제 1 구리막이 소정의 두께로 잔존하도록 제 1 구리막을 식각하는 단계를 포함한다. 이후, 상기 식각된 제 1 구리막 상에 제 2 구리막을 형성한 후, 상기 제 2 및 제 1 구리막들을 연마하여 개구부를 채우는 구리 패턴을 형성한다.

公开(公告)号：KR1020030042153A

公开(公告)日：2003-05-28

申请号：KR1020010072687

申请日：2001-11-21

Applicant: 삼성전자주식회사

Inventor： 배금종 ,  이내인 ,  이화성 ,  김상수 ,  이정일

IPC: H01L21/334

CPC classification number: H01L29/6653 ,  H01L21/28114 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/7833

Abstract: PURPOSE: A method for fabricating a metal oxide semiconductor(MOS) transistor with a T-shaped gate electrode is provided to reduce capacitance, make a channel length short, increase a cross section of a gate and decrease source/drain resistance by forming an intermediate density impurity region between a high density impurity region and a low density impurity region while using an L-shaped gate spacer formed on the side surface of the T-shaped gate electrode. CONSTITUTION: The T-shaped gate electrode is formed on a semiconductor substrate(100). A low density ion implantation process is performed by using the gate electrode as an ion implantation mask so that the low density impurity region(160) is formed in the semiconductor substrate at both sides of the gate electrode. An L-shaped lower spacer(175), an L-shaped intermediate spacer and an upper spacer are sequentially stacked on the low density impurity region at the side surface of the gate electrode. The upper and intermediate spacers are eliminated to expose the lower spacer. A high density ion implantation process is performed on the semiconductor substrate to which the lower spacer is exposed so that the high density impurity region(200) and the intermediate density impurity region(205) are formed.

Abstract translation: 目的：提供一种用于制造具有T形栅电极的金属氧化物半导体（MOS）晶体管的方法，以减小电容，使通道长度短，增加栅极的横截面并通过形成中间体 同时使用形成在T形栅极的侧表面上的L形栅极间隔区，在高密度杂质区和低密度杂质区之间的高密度杂质区。 构成：在半导体衬底（100）上形成T形栅电极。 通过使用栅电极作为离子注入掩模来进行低密度离子注入工艺，使得在栅极两侧的半导体衬底中形成低密度杂质区（160）。 在栅电极的侧面的低密度杂质区上依次层叠有L字形的下隔片（175），L形中间隔片和上隔片。 消除上部和中间间隔件以暴露下部间隔件。 在暴露下部间隔物的半导体衬底上进行高密度离子注入工艺，从而形成高密度杂质区域（200）和中间密度杂质区域（205）。

公开(公告)号：KR100810375B1

公开(公告)日：2008-03-04

申请号：KR1020070002504

申请日：2007-01-09

Applicant: 삼성전자주식회사

Inventor： 이정일 ,  유경목

IPC: H04B1/38

CPC classification number: H04M1/0202

Abstract: A reinforcement device in a slim portable terminal is provided to improve the bend reinforcement of a portable terminal by forming the first and second reinforcement members at a front case and to increase the bending strength of the front case by installing the second reinforcement members at both sides of the front case. A reinforcement device(20) in a slim portable terminal(10) comprises the first reinforcement member(30), the second reinforcement members(40) and reinforcement installation parts. The first reinforcement member(30) is installed at a front case(11). The second reinforcement members(40) are installed at both sides of the front case(11) so as to increase the bending strength of the front case(11). The reinforcement installation parts are provided at both sides of the first reinforcement member(30) in order to install the second reinforcement members(40).

Abstract translation: 提供了一种超薄便携式终端中的加强装置，用于通过在前壳体处形成第一和第二加强构件来改善便携式终端的弯曲加强，并且通过在两侧安装第二加强构件来提高前壳的弯曲强度 的前箱 超薄便携式终端（10）中的加强装置（20）包括第一加强件（30），第二加强件（40）和加强件安装部件。 第一加强构件（30）安装在前壳体（11）上。 第二加强构件（40）安装在前壳体（11）的两侧，以增加前壳体（11）的弯曲强度。 为了安装第二加强件（40），加强件安装部分设置在第一加强件（30）的两侧。