公开(公告)号：KR1020020016748A

公开(公告)日：2002-03-06

申请号：KR1020010002574

申请日：2001-01-17

Applicant: 삼성전자주식회사

Inventor： 민요셉 ,  조영진 ,  김대식 ,  이익모 ,  임선권 ,  이완인 ,  최보현

IPC: C23C16/18

CPC classification number: C07C225/14 ,  C07F7/28 ,  C23C16/409 ,  C23C16/45531 ,  C23C16/45553

Abstract: PURPOSE: A novel group IV metal precursor is provided which displays superior volatility and thermal characteristics, has excellent chemical stability for hydrolysis, and is particularly suitable for the formation of a multi-component metal oxide thin film comprising a group IV metal such as titanium, and a chemical vapor deposition method using the same is provided. CONSTITUTION: The metal organic precursor for manufacturing a metal oxide thin film consists of a negative bivalent tridentate ligand(L) represented as in the following Formula 1 and a quadrivalent group IV metal(M), and represented as M(L)2:£Formula 1|where each of R1 and R2 are linear or branched alkyl groups having carbon numbers of 1 to 8, and R3 is a linear or branched alkylene group having carbon numbers of 1 to 8, wherein the quadrivalent group IV metal(M) is Ti. The chemical vapor deposition method is characterized in that a metal oxide thin film is formed by using a complex of a quadrivalent IV group metal(M) and a chemical formula M(L)2 consisting of a negative bivalent tridentate ligand(L) represented as in the following Formula 1 as a quadrivalent IV group metal precursor:£Formula 1|where each of R1 and R2 are linear or branched alkyl groups having carbon numbers of 1 to 8, and R3 is a linear or branched alkylene group having carbon numbers of 1 to 8, wherein a complex of formula Ti(L)2 in which the quadrivalent IV group metal(M) is Ti is used as a titanium precursor.

Abstract translation: 目的：提供一种新颖的IV族金属前体，其具有优异的挥发性和热特性，具有优异的水解化学稳定性，特别适用于形成包含IV族金属如钛的多组分金属氧化物薄膜， 并提供使用其的化学气相沉积方法。 构成：用于制造金属氧化物薄膜的金属有机前体由如下式1所示的负二价三齿配体（L）和四价IV族金属（M）组成，并表示为M（L）2：£ 式1 |其中R1和R2各自为碳数为1至8的直链或支链烷基，R3为碳数为1至8的直链或支链亚烷基，其中四价IV族金属（M）为 钛。 化学气相沉积方法的特征在于通过使用四价IV族金属（M）和由负二价三齿配体（L）组成的化学式M（L）2的络合物形成金属氧化物薄膜，所述负二价三齿配体（L） 在下列式1中，作为四价IV族金属前体：其中R 1和R 2各自为碳数为1至8的直链或支链烷基，R 3为直链或支链的碳数为 1〜8，其中使用四价IV族金属（M）为Ti的式Ti（L）2的配合物作为钛前体。

公开(公告)号：KR100367346B1

公开(公告)日：2003-01-09

申请号：KR1020010002574

申请日：2001-01-17

Applicant: 삼성전자주식회사

Inventor： 민요셉 ,  조영진 ,  김대식 ,  이익모 ,  임선권 ,  이완인 ,  최보현

IPC: C23C16/18

Abstract: PURPOSE: A novel group IV metal precursor is provided which displays superior volatility and thermal characteristics, has excellent chemical stability for hydrolysis, and is particularly suitable for the formation of a multi-component metal oxide thin film comprising a group IV metal such as titanium, and a chemical vapor deposition method using the same is provided. CONSTITUTION: The metal organic precursor for manufacturing a metal oxide thin film consists of a negative bivalent tridentate ligand(L) represented as in the following Formula 1 and a quadrivalent group IV metal(M), and represented as M(L)2:£Formula 1|where each of R1 and R2 are linear or branched alkyl groups having carbon numbers of 1 to 8, and R3 is a linear or branched alkylene group having carbon numbers of 1 to 8, wherein the quadrivalent group IV metal(M) is Ti. The chemical vapor deposition method is characterized in that a metal oxide thin film is formed by using a complex of a quadrivalent IV group metal(M) and a chemical formula M(L)2 consisting of a negative bivalent tridentate ligand(L) represented as in the following Formula 1 as a quadrivalent IV group metal precursor:£Formula 1|where each of R1 and R2 are linear or branched alkyl groups having carbon numbers of 1 to 8, and R3 is a linear or branched alkylene group having carbon numbers of 1 to 8, wherein a complex of formula Ti(L)2 in which the quadrivalent IV group metal(M) is Ti is used as a titanium precursor.

Abstract translation: 目的：提供一种新颖的IV族金属前体，其显示出优异的挥发性和热特性，对水解具有优异的化学稳定性，并且特别适用于形成包含IV族金属如钛的多组分金属氧化物薄膜， 并提供使用其的化学气相沉积方法。 构成：用于制造金属氧化物薄膜的金属有机前体由如下式1所示的负二价三齿配体（L）和四价IV族金属（M）组成，并且表示为M（L）2： ;式1 |其中R 1和R 2各自为碳数为1至8的直链或支链烷基，并且R 3为碳数为1至8的直链或支链亚烷基，其中四价IV族金属（M） 是Ti。 化学气相沉积方法的特征在于，通过使用四价IV族金属（M）和由负值二价三齿配体（L）组成的化学式M（L）2的复合物形成金属氧化物薄膜， 在下式1中作为四价IV族金属前体：式1 |其中R 1和R 2各自为碳数为1至8的直链或支链烷基，并且R 3为具有碳数的直链或支链亚烷基 为1-8，其中使用其中四价IV族金属（M）为Ti的式Ti（L）2的络合物作为钛前体。