公开(公告)号：KR1020120079668A

公开(公告)日：2012-07-13

申请号：KR1020110000987

申请日：2011-01-05

Applicant: 삼성전자주식회사

Inventor： 박현주 ,  전동민 ,  강치구

IPC: H01L33/48 ,  H01L27/15

CPC classification number: H01L2224/48091 ,  H01L2924/00014

Abstract: PURPOSE: An LED package and a method thereof are provided to minimize light loss by providing a light reflective resin portion to a chip mounting region of a package body with the mixture of radial powder and a transparent resin. CONSTITUTION: A package body(10) has a chip mounting region. First and second lead frames(20a,20b) are installed on the package body. A light emitting diode chip(40) is electrically connected to the first and second lead frames. A Zener diode chip(50) is loaded on a region exposed to the chip mounting region of the second lead frame. Light reflective resin portions(60a,60b) are made of the mixture of a transparent resin and radial powder.

Abstract translation: 目的：提供一种LED封装及其方法，以通过将径向粉末和透明树脂的混合物提供到封装体的芯片安装区域来提供光反射树脂部分来最小化光损失。 构成：包装体（10）具有芯片安装区域。 第一和第二引线框架（20a，20b）安装在封装主体上。 发光二极管芯片（40）电连接到第一引线框架和第二引线框架。 齐纳二极管芯片（50）装载在暴露于第二引线框架的芯片安装区域的区域上。 光反射树脂部分（60a，60b）由透明树脂和径向粉末的混合物制成。

公开(公告)号：KR1020100066879A

公开(公告)日：2010-06-18

申请号：KR1020080125376

申请日：2008-12-10

Applicant: 삼성전자주식회사

Inventor： 전동민 ,  박성주 ,  김용천 ,  윤상호 ,  박현주

IPC: H01L33/42

Abstract: PURPOSE: A semiconductor light emitting device including a patterned transparent electrode layer is provided to reduce a current channeling phenomenon by adjusting the width gap of an optical extraction pattern. CONSTITUTION: A first conductive semiconductor layer(22) is formed on a substrate(21). An active layer(24) is formed on the first conductive semiconductor layer. A second conductive semiconductor layer(23) is formed on the active layer. A transparent electrode layer(25) is formed on the second conductive semiconductor layer. A first electrode(26) is formed on the exposed region of the first conductive semiconductor layer. A second electrode(27) is formed on the transparent electrode layer.

Abstract translation: 目的：提供包括图案化透明电极层的半导体发光器件，以通过调整光学提取图案的宽度间隙来减少电流通道现象。 构成：在基板（21）上形成第一导电半导体层（22）。 在第一导电半导体层上形成有源层（24）。 在有源层上形成第二导电半导体层（23）。 在第二导电半导体层上形成透明电极层（25）。 第一电极（26）形成在第一导电半导体层的暴露区域上。 第二电极（27）形成在透明电极层上。

公开(公告)号：KR1020090047888A

公开(公告)日：2009-05-13

申请号：KR1020070113968

申请日：2007-11-08

Applicant: 삼성전자주식회사

Inventor： 박현주 ,  전동민 ,  이혁민

IPC: H01L33/60 ,  H01L33/62 ,  H01L33/52

Abstract: 본 발명은 발광다이오드 패키지에 관한 것으로서, 특히, 한 쌍 이상의 리드 단자로 형성된 리드 프레임과, 상기 리드 프레임의 일부를 내부에 수용하고, 빛이 방사되도록 오픈된 방사창을 가지도록 형성된 패키지와, 방사창을 통해 노출된 상기 패키지의 내부에 수용된 리드 프레임 표면 중 LED 칩 실장 영역 상에 형성된 몰드와, 상기 몰드 상에 실장된 LED 칩과, 상기 LED 칩과 상기 리드프레임의 통전을 위한 전극 연결부 및 상기 패키지 내부에 충진되어 상기 LED 칩을 보호하는 몰딩재를 포함하는 발광다이오드 패키지를 제공한다.
발광다이오드, 패키지, 휘도

公开(公告)号：KR1020100063534A

公开(公告)日：2010-06-11

申请号：KR1020080122093

申请日：2008-12-03

Applicant: 삼성전자주식회사

Inventor： 전동민 ,  박성주 ,  권민기 ,  김자연 ,  박현주

IPC: H01L33/38

Abstract: PURPOSE: A flip chip type nitride semiconductor light emitting is provided to include an excellent luminous efficiency by including a reflective electrode with a high thermal stability and a reflectivity. CONSTITUTION: A first conductive type nitride semiconductor layer(22) is formed on a substrate(21). An active layer(24) is formed on the first conductive type nitride semiconductor layer. A second conductive type nitride semiconductor layer(23) is formed on the active layer. A light permeability conductive layer(27) is formed on the second conductive type nitride semiconductor layer. A first electrode(25) is formed on an exposed area of the first electrical conductive semiconductor layer. A reflective electrode(26) is formed on the light permeability conductive layer.

Abstract translation: 目的：通过包括具有高热稳定性和反射率的反射电极，提供了一种倒装芯片型氮化物半导体发光，以包括优异的发光效率。 构成：在基板（21）上形成第一导电型氮化物半导体层（22）。 在第一导电型氮化物半导体层上形成有源层（24）。 在有源层上形成第二导电型氮化物半导体层（23）。 在第二导电型氮化物半导体层上形成透光导电层（27）。 第一电极（25）形成在第一导电半导体层的暴露区域上。 反射电极（26）形成在透光性导电层上。