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公开(公告)号：KR101479623B1
公开(公告)日：2015-01-08
申请号：KR1020080071299
申请日：2008-07-22
CPC classification number: H01L33/06 , H01L33/025 , H01L33/32
Abstract: 본 발명은 다중 양자 우물 구조의 활성층을 구비한 질화물 반도체 발광 소자에 관한 것으로, 기판상에 버퍼층, n형 질화물 반도체층, 활성층 및 p형 질화물 반도체층이 순차 적층된 질화물 반도체 발광소자에 있어서, 상기 활성층은 복수개의 장벽층과 복수개의 우물층이 교대로 배열된 다중 양자 우물(Multi Quantum Well) 구조를 가지며, 상기 복수개의 장벽층 중 적어도 1개 층은 p형 도펀트가 도핑된 p형 도핑 장벽층과 상기 p형 GaN층의 적어도 일측에 언도프된 장벽층을 갖는 제1 장벽층을 구비한다.
MQW, 질화물, Mg 도핑, Si 도핑Abstract translation: 本发明涉及一种氮化物半导体发光作为缓冲层，n型氮化物半导体层，有源层和氮化物半导体层的p型氮化物半导体发光器件依次堆叠在所述基板上根据具有多量子阱结构的有源层的装置，其中 有源层具有一多量子阱设置在多个势垒层和多个阱层交替（多量子阱），其具有所述多个势垒层型的具有p型掺杂剂掺杂的p型掺杂的阻挡层的至少一层结构 以及在p型GaN层的至少一侧上具有未掺杂的阻挡层的第一阻挡层。
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公开(公告)号：KR101341374B1
公开(公告)日：2013-12-16
申请号：KR1020070076376
申请日：2007-07-30
Applicant: 삼성전자주식회사
CPC classification number: H01L33/42 , H01L2933/0083
Abstract: 나아가, 본발명은광자결정구조를 p형반도체층이아닌투명전극층에형성하므로, 에칭공정에의한 p형반도체층의피해를최소화하여소자의전기적, 광학적특성을향상시킬수 있다.
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公开(公告)号：KR1020090012494A
公开(公告)日：2009-02-04
申请号：KR1020070076376
申请日：2007-07-30
Applicant: 삼성전자주식회사
CPC classification number: H01L33/42 , H01L2933/0083
Abstract: A photonic crystal light emitting device and a manufacturing method of the same are provided to improve the optical extraction efficiency by preventing the total internal reflection in respect to the light generated from the active layer. A photonic crystal light emitting device(10) comprises a light emitting structure, a transparent electrode layer(15), the first electrode(16a) and the second electrode(16b). The first conductivity type semiconductor layer(12), an active layer(13) and the second conductivity type semiconductor layer(14) are successively integrated on the light emitting structure. Transparent electrode layers are formed on the second conductivity type semiconductor layer. The photonic crystal can control the transmission and the generation of the electro magnetic wave.
Abstract translation: 提供了一种光子晶体发光器件及其制造方法，通过防止从有源层产生的光的全内反射来提高光提取效率。 光子晶体发光器件（10）包括发光结构，透明电极层（15），第一电极（16a）和第二电极（16b）。 第一导电类型半导体层（12），有源层（13）和第二导电类型半导体层（14）依次集成在发光结构上。 透明电极层形成在第二导电型半导体层上。 光子晶体可以控制电磁波的传输和产生。
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Patent Agency Ranking
公开(公告)号：KR101552104B1
公开(公告)日：2015-09-14
申请号：KR1020090004547
申请日：2009-01-20
Applicant: 삼성전자주식회사
Abstract: 본발명은반도체발광소자에관한것으로서, 본발명의일 실시형태는, n형및 p형반도체층과이들사이에형성된활성층및 상기 n형및 p형반도체층중 적어도하나와상기활성층사이에형성되고, 금속입자및 절연물질을구비하되, 상기금속입자가상기절연물질에의해상기 n형및 p형반도체층중 적어도하나의방향으로밀봉된구조이며, 상기 n형및 p형반도체층중 적어도하나와상기활성층사이의전기도통을위한도전성비아를구비하는표면플라즈몬층을포함하는반도체발광소자를제공한다. 본발명에따르면, 표면플라즈몬공명을이용하여발광효율이향상된반도체발광소자를얻을수 있다. 특히, 본발명에따른반도체발광소자를사용할경우, 표면플라즈몬공명을위해채용되는금속이활성층내부로확산되는것을최소화할수 있다.
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公开(公告)号：KR1020090012493A
公开(公告)日：2009-02-04
申请号：KR1020070076375
申请日：2007-07-30
Applicant: 삼성전자주식회사
IPC: H01L33/00
CPC classification number: H01L33/08 , H01L33/44 , H01L2933/0083
Abstract: A photonic crystal light emitting device is provided to improve the optical extraction efficiency by preventing the total internal reflection to the light generated from the active layer between the p-type and n-type semiconductor layers. A photonic crystal light emitting device comprises a nanorods light emitting structure(N), the first electrode(17a) and the second electrode(17b). Each of nanorods light emitting structures can have the first conductivity type semiconductor layers(12,13), and an active layer(14) and the second electrical conduction semiconductor layers(15,16) in the form of the nanorods. The nanorods light emitting structure has the photonic structure. The photonic crystal can control the transmission and the generation of the electro magnetic wave. The first electrode is arranged on the first conductivity type semiconductor layer. The second electrode is arranged on the second conductive type semiconductor layer.
Abstract translation: 提供一种光子晶体发光器件，通过防止从p型和n型半导体层之间的有源层产生的光的全内反射来提高光学提取效率。 光子晶体发光器件包括纳米棒发光结构（N），第一电极（17a）和第二电极（17b）。 每个纳米棒发光结构可以具有纳米棒形式的第一导电类型半导体层（12,13）以及有源层（14）和第二导电半导体层（15,16）。 纳米棒发光结构具有光子结构。 光子晶体可以控制电磁波的传输和产生。 第一电极布置在第一导电类型半导体层上。 第二电极布置在第二导电类型半导体层上。
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公开(公告)号：KR1020100063534A
公开(公告)日：2010-06-11
申请号：KR1020080122093
申请日：2008-12-03
Applicant: 삼성전자주식회사
IPC: H01L33/38
Abstract: PURPOSE: A flip chip type nitride semiconductor light emitting is provided to include an excellent luminous efficiency by including a reflective electrode with a high thermal stability and a reflectivity. CONSTITUTION: A first conductive type nitride semiconductor layer(22) is formed on a substrate(21). An active layer(24) is formed on the first conductive type nitride semiconductor layer. A second conductive type nitride semiconductor layer(23) is formed on the active layer. A light permeability conductive layer(27) is formed on the second conductive type nitride semiconductor layer. A first electrode(25) is formed on an exposed area of the first electrical conductive semiconductor layer. A reflective electrode(26) is formed on the light permeability conductive layer.
Abstract translation: 目的：通过包括具有高热稳定性和反射率的反射电极，提供了一种倒装芯片型氮化物半导体发光，以包括优异的发光效率。 构成：在基板（21）上形成第一导电型氮化物半导体层（22）。 在第一导电型氮化物半导体层上形成有源层（24）。 在有源层上形成第二导电型氮化物半导体层（23）。 在第二导电型氮化物半导体层上形成透光导电层（27）。 第一电极（25）形成在第一导电半导体层的暴露区域上。 反射电极（26）形成在透光性导电层上。
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公开(公告)号：KR1020100085329A
公开(公告)日：2010-07-29
申请号：KR1020090004547
申请日：2009-01-20
Applicant: 삼성전자주식회사
Abstract: PURPOSE: A semiconductor light emitting device is provided to prevent an electrical characteristic from being reduce due to the change of the thickness of a p-type semiconductor layer by forming a surface Plasmon layer to be adjacent to an active layer. CONSTITUTION: An n-type semiconductor layer(102) is formed on a substrate(101). A surface Plasmon layer(103) is formed on the n-type semiconductor layer. An active layer(104) is formed on the surface Plasmon layer. A p-type semiconductor layer(105) is formed on the active layer. An n-type electrode(106a) and a p-type semiconductor electrode(106b) are formed on the n-type and the p-type semiconductor layers, respectively. The surface Plasmon layer includes a conductive via for conductive electricity.
Abstract translation: 目的：提供一种半导体发光器件，以通过形成与活性层相邻的表面等离子体层来防止由于p型半导体层的厚度的变化而导致的电特性的降低。 构成：在衬底（101）上形成n型半导体层（102）。 表面等离子体层（103）形成在n型半导体层上。 在表面等离子体层上形成有源层（104）。 在有源层上形成p型半导体层（105）。 分别在n型和p型半导体层上形成n型电极（106a）和p型半导体电极（106b）。 表面等离子体层包括用于导电的导电通孔。
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公开(公告)号：KR1020100010364A
公开(公告)日：2010-02-01
申请号：KR1020080071299
申请日：2008-07-22
CPC classification number: H01L33/06 , H01L33/025 , H01L33/32
Abstract: PURPOSE: A nitride semiconductor light emitting device is provided to improve the reduction of the external quantum efficiency of LED at high current density by improving hole implantation efficiency into a well layer. CONSTITUTION: A buffer layer(2), an n-type nitride semiconductor layer(3), an active layer(4), and p-type nitride semiconductor layer(5) are laminated on the substrate(1) consecutively. The active layer is a multi-quantum well structure in which a plurality of barriers and a plurality of well layers are arranged alternatively. At least one among a plurality of barriers is a first barrier having a p-type doping barrier and an undoped barrier. The first barrier is formed by laminating the p-type doping barrier and the undoped barrier consecutively.
Abstract translation: 目的：提供一种氮化物半导体发光器件，通过提高阱层的空穴注入效率，提高LED在高电流密度下的外部量子效率的降低。 构成：缓冲层（2），n型氮化物半导体层（3），有源层（4）和p型氮化物半导体层（5）连续层叠在基板（1）上。 有源层是多量子阱结构，其中多个屏障和多个阱层交替布置。 多个屏障中的至少一个是具有p型掺杂屏障和未掺杂屏障的第一屏障。 第一屏障是通过层叠p型掺杂屏障和未掺杂的屏障形成的。
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