公开(公告)号：KR1020140122824A

公开(公告)日：2014-10-21

申请号：KR1020130039712

申请日：2013-04-11

Applicant: 삼성전자주식회사

Inventor： 이제동 ,  김영일 ,  김일우 ,  이광재 ,  전인화 ,  황성준

IPC: H01L21/336 ,  H01L29/78 ,  H01L21/764

CPC classification number: H01L29/42324 ,  H01L21/764 ,  H01L27/11521 ,  H01L29/7881 ,  H01L21/76801 ,  H01L21/02274 ,  H01L21/76829 ,  H01L27/11517

Abstract: Disclosed is a manufacturing method of a semiconductor device. As a manufacturing method of a semiconductor device, multiple gate structures separated from each other in a first direction are formed a substrate. A chemical vapor deposition (CVD) process using silane (SiH4) gas is performed to form an insulating film pattern surrounding an air gap placed between the gate structures. The width of the air gap in the first direction is 65% higher and 70% lower than a distance between the gate structures in the first direction.

Abstract translation: 公开了一种半导体器件的制造方法。 作为半导体器件的制造方法，在第一方向上分离的多个栅极结构形成基板。 进行使用硅烷（SiH 4）气体的化学气相沉积（CVD）工艺以形成围绕放置在栅极结构之间的气隙的绝缘膜图案。 第一方向上的气隙的宽度比第一方向上的栅极结构之间的距离高65％和70％。