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公开(公告)号：KR101641573B1
公开(公告)日：2016-07-22
申请号：KR1020090108912
申请日：2009-11-12
Applicant: 삼성전자주식회사
IPC: H01L21/76
CPC classification number: H01L21/76229
Abstract: 소자분리구조물은제1 영역및 제2 영역을가지며, 상호이격된복수의소자들이배치되는기판, 소자들사이및 제1 영역의기판상부에제1 폭을갖도록형성된제1 트렌치내부에순차적으로형성된보이드가없는제1 산화막패턴및 제3 산화막패턴및 소자들사이및 제2 영역의기판상부에제1 폭보다큰 제2 폭을갖도록형성된제2 트렌치내부에순차적으로형성된제2 산화막패턴및 내부에보이드를갖는제4 산화막패턴을포함한다. 따라서, 소자분리구조물은우수한열적안정성을가질수 있다.
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公开(公告)号：KR1020080101336A
公开(公告)日：2008-11-21
申请号：KR1020070047961
申请日：2007-05-17
Applicant: 삼성전자주식회사
IPC: H01L29/00
CPC classification number: B41J2/1601 , B33Y80/00 , B41J2/1628 , B41J2/1631 , B41J2/1632 , B41J2/1639
Abstract: A MEMA(Micro Electro Mechanical System) and a manufacturing method thereof are provided to flat a chamber layer by inspecting an end point detector, which is formed at the chamber layer, with an optical microscope in order to detect the thickness of the chamber layer conveniently. A substrate is prepared, and an ink chamber which has ink is formed on the substrate. A chamber layer(20) is flattened by a CMP(Chemical Mechanical Polishing) process. Two end point detectors which have different depths are formed at the chamber layer to conveniently inspect whether or not the chamber layer is flattened with the thickness that a user wants. Each end point detector displays the margin of error as to the thickness of the chamber layer when flatting the chamber.
Abstract translation: 提供了一种MEMA（微机电系统）及其制造方法，通过用光学显微镜检查形成在室层的端点检测器，以便于方便地检测室层的厚度来平坦化室层 。 准备基板，在基板上形成有油墨的墨室。 通过CMP（化学机械抛光）工艺将室层（20）平坦化。 在室层形成具有不同深度的两个端点检测器，以方便地检查室层是否以用户想要的厚度变平。 每个端点检测器在使腔室平坦化时显示腔室层厚度的误差范围。
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公开(公告)号：KR1020040042186A
公开(公告)日：2004-05-20
申请号：KR1020020070355
申请日：2002-11-13
Applicant: 삼성전자주식회사
IPC: H01L21/00
Abstract: PURPOSE: A nozzle apparatus for manufacturing a semiconductor device is provided to restrain the reaction gas supplied to a chamber from being heated in a flow path by forming a groove between the outer wall of a nozzle pipe and the flow path. CONSTITUTION: A nozzle apparatus for manufacturing a semiconductor device is provided with a nozzle housing(120) having a hole(121) at its inner portion and a nozzle pipe(122) inserted into the hole. The nozzle pipe has a flow path(123) and at least one groove(124) between the flow path and the outer wall of the nozzle pipe for enclosing the flow path. The nozzle apparatus further includes a gas supply pipe(125) connected with the nozzle pipe for supplying gas to the flow path and a heat insulating part inserted into the groove.
Abstract translation: 目的：提供一种用于制造半导体器件的喷嘴装置，用于通过在喷嘴管的外壁和流路之间形成凹槽来限制供应到腔室的反应气体在流路中被加热。 构成：用于制造半导体器件的喷嘴装置设置有在其内部具有孔（121）的喷嘴壳体（120）和插入孔中的喷嘴管（122）。 喷嘴管具有在流路和喷嘴管的外壁之间的流路（123）和至少一个凹槽（124），用于封闭流路。 喷嘴装置还包括与用于向流路供给气体的喷嘴管连接的气体供给管（125）和插入到槽中的绝热部。
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公开(公告)号：KR1020110052038A
公开(公告)日：2011-05-18
申请号：KR1020090108912
申请日：2009-11-12
Applicant: 삼성전자주식회사
IPC: H01L21/76
CPC classification number: H01L21/76229 , H01L21/762 , H01L21/76202 , H01L21/76224
Abstract: PURPOSE: A device separation structure and forming method thereof are provided to include a void in a fourth oxide film pattern which buries a second trench to absorb thermal expansion during a high temperature heating process, thereby obtaining structural stability of the fourth oxide film pattern. CONSTITUTION: A substrate(110) comprises a first area(111) and a second area(112). A plurality of devices(120) is separated on the substrate. A first oxide film pattern(135) and a third oxide film pattern(137) are successively formed in a first trench(116) with a first width on the substrate. A fourth oxide film pattern(144) is formed in a second trench(117) to have a second width. A void is formed in the fourth oxide film pattern.
Abstract translation: 目的：提供一种器件分离结构及其形成方法，其包括第四氧化膜图案中的空隙，该第四氧化膜图案在高温加热过程中埋入第二沟槽以吸收热膨胀，由此获得第四氧化膜图案的结构稳定性。 构成：衬底（110）包括第一区域（111）和第二区域（112）。 多个器件（120）在衬底上分离。 第一氧化膜图案（135）和第三氧化膜图案（137）依次形成在基板上具有第一宽度的第一沟槽（116）中。 第四氧化膜图案（144）形成在第二沟槽（117）中以具有第二宽度。 在第四氧化膜图案中形成空隙。
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公开(公告)号：KR1020100013716A
公开(公告)日：2010-02-10
申请号：KR1020080075348
申请日：2008-07-31
Applicant: 삼성전자주식회사
CPC classification number: B41J2/1632 , B24B37/042 , B41J2/14129 , B41J2/1603 , B41J2/1623 , B41J2/1628 , B41J2/1631 , B41J2/1639 , Y10T29/49401
Abstract: PURPOSE: A manufacturing method for an inkjet print head is provided to form uniform thickness of nozzle layer above sacrificial and chamber layers by making the top surfaces of the sacrificial and chamber layers flat. CONSTITUTION: A manufacturing method for an inkjet print head comprises the steps of: forming a chamber layer(120) having an ink chamber on a substrate(110), forming a sacrificial layer(125) including water soluble polymer on the chamber layer, flattening the top surfaces of the sacrificial and chamber layers through chemical-mechanical polishing, forming a nozzle layer having a nozzle on the sacrificial and chamber layers, forming an ink feed hole for ink supply on the substrate, and removing the sacrificial layer.
Abstract translation: 目的：提供喷墨打印头的制造方法，以使牺牲层和室层的顶表面平坦，从而在牺牲层和室层之上形成喷嘴层的均匀厚度。 构成：喷墨打印头的制造方法包括以下步骤：在衬底（110）上形成具有墨水室的室层（120），在室层上形成包含水溶性聚合物的牺牲层（125），使其平坦化 通过化学机械抛光在牺牲层和室层的顶表面上形成在牺牲层和室层上具有喷嘴的喷嘴层，形成用于在基板上供墨的供墨孔，以及去除牺牲层。
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Patent Agency Ranking
公开(公告)号：KR1020140122824A
公开(公告)日：2014-10-21
申请号：KR1020130039712
申请日：2013-04-11
Applicant: 삼성전자주식회사
IPC: H01L21/336 , H01L29/78 , H01L21/764
CPC classification number: H01L29/42324 , H01L21/764 , H01L27/11521 , H01L29/7881 , H01L21/76801 , H01L21/02274 , H01L21/76829 , H01L27/11517
Abstract: Disclosed is a manufacturing method of a semiconductor device. As a manufacturing method of a semiconductor device, multiple gate structures separated from each other in a first direction are formed a substrate. A chemical vapor deposition (CVD) process using silane (SiH4) gas is performed to form an insulating film pattern surrounding an air gap placed between the gate structures. The width of the air gap in the first direction is 65% higher and 70% lower than a distance between the gate structures in the first direction.
Abstract translation: 公开了一种半导体器件的制造方法。 作为半导体器件的制造方法，在第一方向上分离的多个栅极结构形成基板。 进行使用硅烷（SiH 4）气体的化学气相沉积（CVD）工艺以形成围绕放置在栅极结构之间的气隙的绝缘膜图案。 第一方向上的气隙的宽度比第一方向上的栅极结构之间的距离高65％和70％。
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公开(公告)号：KR1020080008816A
公开(公告)日：2008-01-24
申请号：KR1020060068569
申请日：2006-07-21
Applicant: 삼성전자주식회사
CPC classification number: B41J2/05 , B41J2/14016 , B41J2/1433 , B41J2/1626 , B41J2/1631 , B41J2/1639
Abstract: An ink-jet recording head and a method for fabricating the same are provided to protect a nozzle plate from external impact by preventing stress concentration of the nozzle plate in an arbitrary position. An ink-jet recording head comprises a nozzle plate and a stress dispersion member. The nozzle plate is provided with outlets. The stress dispersion member is protruded on the nozzle plate and is provided with one or a plurality of bent surfaces.
Abstract translation: 提供一种喷墨记录头及其制造方法，用于通过防止喷嘴板在任意位置的应力集中来保护喷嘴板免受外部冲击。 喷墨记录头包括喷嘴板和应力分散部件。 喷嘴板设有出口。 应力分散构件在喷嘴板上突出并设置有一个或多个弯曲表面。
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公开(公告)号：KR1020040063586A
公开(公告)日：2004-07-14
申请号：KR1020030001060
申请日：2003-01-08
Applicant: 삼성전자주식회사
IPC: H01L21/31
Abstract: PURPOSE: A method of filling gaps having high aspect ratio is provided to be used in a process for making a gap with a high aspect ratio filled with an interlayer dielectric by sufficiently increasing an impurity density of a BPSG(boron phosphorous silicate glass) layer without damaging a silicon nitride layer. CONSTITUTION: A silicon nitride layer liner is formed on a process substrate having the gap. An impurity diffusion blocking layer(22) is formed on the silicon nitride layer liner by an ALD(atomic layer deposition) process. A BPSG layer(23) is formed on the impurity diffusion blocking layer. The impurity diffusion blocking layer is formed of an USG(undoped silicon glass) layer.
Abstract translation: 目的：提供一种填充具有高纵横比的间隙的方法，用于通过充分提高BPSG（硼硅酸玻璃）层的杂质浓度而形成具有填充有层间电介质的高纵横比的间隙的工艺，而没有 损坏氮化硅层。 构成：在具有间隙的工艺衬底上形成氮化硅层衬垫。 通过ALD（原子层沉积）工艺在氮化硅层衬垫上形成杂质扩散阻挡层（22）。 在杂质扩散阻挡层上形成BPSG层（23）。 杂质扩散阻挡层由USG（未掺杂的硅玻璃）层形成。
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公开(公告)号：KR102051961B1
公开(公告)日：2019-12-17
申请号：KR1020130026790
申请日：2013-03-13
Applicant: 삼성전자주식회사
IPC: H01L27/108 , H01L21/8242 , H01L21/28
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