公开(公告)号：KR1020090065980A

公开(公告)日：2009-06-23

申请号：KR1020070133549

申请日：2007-12-18

Applicant: 삼성전자주식회사

Inventor： 조정현 ,  정슬영

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/1462 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14687

Abstract: An image sensor manufacturing method and an image sensor manufactured thereby are provided to improve process stability and to increase a yield by preventing damage of a micro lens and generation of particles due to organic materials of the micro lens in a manufacturing process. A semiconductor substrate(101) in which a pixel region(A) and a pad area(B) are defined is provided. An active pixel sensor array and a color filter(510) formed on the active pixel sensor array are formed on the semiconductor substrate of the pixel region. A metal pad(330) is formed on the semiconductor substrate of the pad area. An upper part of the semiconductor substrate is planarized by a planarization layer(520). The micro lens is formed on an upper part of the planarization layer of the pixel region. A micro lens protection layer(620) formed with the non-photosensitive polymer layer is formed on the planarization layer in which the micro lens is formed. A mask layer for exposing an upper region of the metal pad is formed on the micro lens protection layer. The micro lens protection layer and the planarization layer are partially removed by using the mask layer as an etch mask. A partial upper side of the metal pad is exposed. The mask layer is removed.

Abstract translation: 提供了一种图像传感器制造方法和由此制造的图像传感器，以通过在制造过程中防止微透镜的损坏和由于微透镜的有机材料产生颗粒而提高工艺稳定性并提高产量。 提供其中限定了像素区域（A）和焊盘区域（B）的半导体衬底（101）。 形成在有源像素传感器阵列上的有源像素传感器阵列和滤色器（510）形成在像素区域的半导体衬底上。 在焊盘区域的半导体衬底上形成金属焊盘（330）。 半导体衬底的上部由平坦化层（520）平坦化。 微透镜形成在像素区域的平坦化层的上部。 形成有非感光性聚合物层的微透镜保护层（620）形成在形成有微透镜的平坦化层上。 在微透镜保护层上形成用于暴露金属焊盘的上部区域的掩模层。 通过使用掩模层作为蚀刻掩模，部分去除微透镜保护层和平坦化层。 暴露金属垫的部分上侧。 去除掩模层。