公开(公告)号：KR100515040B1

公开(公告)日：2005-11-25

申请号：KR1019980041428

申请日：1998-10-01

Applicant: 삼성전자주식회사

Inventor： 김재호 ,  정재강

IPC: H01L21/027

Abstract: 본 발명은 반도체 제조 장치인 열처리 장치에 관한 것으로, 열처리 장치는 공정 챔버와, 공정 챔버내에 설치되는 그리고 웨이퍼가 놓여지는 받침대와, 일단이 상기 공정 챔버에 연결되는 그리고 받침대에 놓여진 웨이퍼의 저면으로 더운 에어가 분출되는 열기공급라인과, 열기공급라인의 타단에 설치되는 그리고 에어를 데워 열기공급라인으로 보내 주는 발열 부재와, 발열 부재에 연결되는 그리고 발열 부재로 에어를 공급하는 에어공급부와, 열기공급라인상에 설치되는 그리고 발열 부재를 통해 가열된 에어간의 온도편차를 줄이기 위해 에어를 혼합하는 믹스 팬 및 공정 챔버에 설치되어 웨이퍼를 데운 에어가 배기되는 배기 라인으로 이루어진다.

公开(公告)号：KR1020010027169A

公开(公告)日：2001-04-06

申请号：KR1019990038768

申请日：1999-09-10

Applicant: 삼성전자주식회사

Inventor： 박창균 ,  정재강 ,  신소영

IPC: H01L21/027

Abstract: PURPOSE: A bake unit is provided to uniformly transfer heat to a lower surface, an upper surface and a side surface of a wafer by installing a heat transfer unit on the upper surface of the wafer in a bake unit, and to improve uniformity of critical dimension in the wafer by optimizing temperature uniformity in the bake unit. CONSTITUTION: A hot plate transfers heat to a back side of a wafer(100), located on the back side of the wafer. A heat transfer unit transfers heat to a front side of the wafer, located on the front side of the wafer, so that heat is uniformly transferred to the entire surface of the wafer. The heat transfer unit can be a metal hot plate.

Abstract translation: 目的：通过在烘烤单元中在晶片的上表面上安装传热单元，将烘烤单元均匀地传递到晶片的下表面，上表面和侧表面，并提高关键的均匀性 通过优化烘烤单元中的温度均匀性，在晶片中的尺寸。 构成：热板将热量传递到位于晶片背面的晶片（100）的背面。 传热单元将热量传递到位于晶片前侧的晶片的前侧，使得热均匀地传递到晶片的整个表面。 传热单元可以是金属热板。

公开(公告)号：KR1020000024752A

公开(公告)日：2000-05-06

申请号：KR1019980041428

申请日：1998-10-01

Applicant: 삼성전자주식회사

Inventor： 김재호 ,  정재강

IPC: H01L21/027

Abstract: PURPOSE: A thermal processing apparatus is provided to improve a uniformity of a temperature transmitted to a wafer by mixing a heated air by a mix fan and heating the wafer in a condition in which a temperature deviation between heat convection is minimized. CONSTITUTION: A heater(30) is operated by a heat generation. An air is provided from an air providing unit(40) to a heater(30). The air heated by the heater(30) is projected to a heat providing line(20). The heated air is mixed through a mix fan(22) and then a temperature deviation between airs is removed. A valve(24) is open. The heated air through the mix fan(22) is provided to a process chamber(12) through the heat providing line(20). A wafer(18) is uniformly heated by the heated air. The heated air for heating the wafer is exhausted through an exhaust line(16).

Abstract translation: 目的：提供一种热处理装置，用于通过混合风扇混合加热的空气并在热对流之间的温度偏差最小化的条件下加热晶片来改善透射至晶片的温度的均匀性。 构成：加热器（30）通过发热操作。 从空气供给单元（40）向加热器（30）提供空气。 由加热器（30）加热的空气被投射到供热管线（20）。 加热的空气通过混合风扇（22）混合，然后除去空气之间的温度偏差。 阀（24）打开。 通过混合风扇（22）的加热空气通过供热管线（20）提供到处理室（12）。 晶片（18）被加热的空气均匀地加热。 用于加热晶片的加热空气通过排气管线（16）排出。

公开(公告)号：KR1020000073904A

公开(公告)日：2000-12-05

申请号：KR1019990017489

申请日：1999-05-15

Applicant: 삼성전자주식회사

Inventor： 정재강 ,  신소영

IPC: G03F1/34 ,  G03F7/26

CPC classification number: G03F7/0035 ,  G03F7/168 ,  G03F7/40 ,  H01L21/0273 ,  H01L21/31144

Abstract: PURPOSE: A formation method of photoresist pattern is provided, which can enhance pattern profile of edge part for enhancing the profile of following pattern to get rid of pattern inferior. CONSTITUTION: The formation method of photoresist pattern comprises the steps of; (1) the step of forming of photoresist layer to coat and soft bake photoresist on the upper side of semiconductive layer; (2) the step of forming of pattern at the edge of dummy patter to transfer the pattern of mask to the photoresist layer by exposure with mask containing dummy line that is formed to have exposure only shift of rim-type phase shift mask; (3) the step of forming of photoresist pattern before heat treatment containing the dummy pattern having constant interval from the down part of the photoresist layer to develop the photoresist layer; and (4) the step of hard baking the photoresist pattern.

Abstract translation: 目的：提供光致抗蚀剂图案的形成方法，其可以增强边缘部分的图案轮廓，以增强跟随图案的轮廓以摆脱图案劣化。 构成：光致抗蚀剂图案的形成方法包括以下步骤： （1）在半导体层的上侧形成光致抗蚀剂层以涂覆和软烘烤光致抗蚀剂的步骤; （2）在虚拟图案的边缘形成图案的步骤，通过用形成为仅具有轮缘型相移掩模的曝光的虚拟线的掩模的曝光将掩模图案转印到光致抗蚀剂层; （3）在热处理之前形成光致抗蚀剂图案的步骤，其包含从光致抗蚀剂层的下部分具有恒定间隔的虚拟图案以显影光致抗蚀剂层; 和（4）硬化烘烤光致抗蚀剂图案的步骤。