公开(公告)号：KR3007065140000S

公开(公告)日：2013-08-27

申请号：KR3020130031835

申请日：2013-06-20

Applicant: 삼성전자주식회사

Designer： 권우정 ,  정재선 ,  김수정 ,  정세미 ,  최윤희 ,  이성민 ,  정덕희

公开(公告)号：KR3007174960000S

公开(公告)日：2013-11-22

申请号：KR3020130031827

申请日：2013-06-20

Applicant: 삼성전자주식회사

Designer： 권우정 ,  정재선 ,  김수정 ,  정세미 ,  최윤희 ,  이성민 ,  정덕희

公开(公告)号：KR3007065170000S

公开(公告)日：2013-08-27

申请号：KR3020130031828

申请日：2013-06-20

Applicant: 삼성전자주식회사

Designer： 권우정 ,  정재선 ,  김수정 ,  정세미 ,  최윤희 ,  이성민 ,  정덕희

公开(公告)号：KR3007065160000S

公开(公告)日：2013-08-27

申请号：KR3020130031831

申请日：2013-06-20

Applicant: 삼성전자주식회사

Designer： 권우정 ,  정재선 ,  김수정 ,  정세미 ,  최윤희 ,  이성민 ,  정덕희

公开(公告)号：KR1020080046485A

公开(公告)日：2008-05-27

申请号：KR1020060116007

申请日：2006-11-22

Applicant: 삼성전자주식회사

Inventor： 조규호 ,  유승호 ,  김윤수 ,  이광희 ,  김재곤 ,  정재선

IPC: C07C49/12 ,  C07C49/92 ,  H01L21/20

Abstract: A beta-diketone ligand, a method for preparing the beta-diketone ligand, an organometallic complex containing the beta-diketone ligand, a method for preparing the complex, a method for forming a thin film by using the complex, and a method for forming a semiconductor memory device by using the complex are provided to improve step coverage and to form a uniform thin film on a structure having a high aspect ratio. A beta-diketone ligand comprises the first compound represented by the formula 1. The first compound represented by the formula 1 is prepared by reacting the second represented by the formula 2 and 3,3-dimethyl-2-butanone. An organometallic complex comprises the compound represented by the formula 4, wherein M is the group 2 element or a lanthanide element. A thin film is formed by supplying a first source containing the compound of the formula 4 on a substrate; supplying a second source containing an oxygen-containing gas on the substrate; and reacting the first source and the second source.

Abstract translation: β-二酮配体，制备β-二酮配体的方法，含有β-二酮配体的有机金属络合物，制备络合物的方法，通过使用络合物形成薄膜的方法和形成方法 提供通过使用该复合物的半导体存储器件以改善步骤覆盖并在具有高纵横比的结构上形成均匀的薄膜。 β-二酮配体包含由式1表示的第一化合物。由式1表示的第一化合物通过使由式2表示的第二化合物与3,3-二甲基-2-丁酮反应而制备。 有机金属络合物包含由式4表示的化合物，其中M是第2族元素或镧系元素。 通过在基板上提供含有式4的化合物的第一源形成薄膜; 在衬底上提供含有含氧气体的第二源; 并使第一源和第二源反应。

公开(公告)号：KR100636023B1

公开(公告)日：2006-10-18

申请号：KR1020050070798

申请日：2005-08-02

Applicant: 삼성전자주식회사 ,  솔브레인 주식회사

Inventor： 조규호 ,  유승호 ,  김병수 ,  정재선 ,  임한진 ,  김기철 ,  임재순

IPC: C07C225/06

Abstract: Provided are a novel organometallic precursor which is improved in volatility and is excellent in the reactivity with an oxidant, and a method for preparing a thin film by using the organometallic precursor. The organometallic precursor comprises a metal; and a ligand represented by the formula 1, wherein R1 and R2 are identical or different each other and are H or a C1-C5 alkyl group. Preferably the metal of the organometallic precursor is any one selected from the group consisting of strontium (Sr), barium (Ba), calcium (Ca), magnesium (Mg) and beryllium (Be). The method comprises the steps of providing a reaction material which comprises a first organometallic precursor represented by the formula 1 and a second organometallic precursor containing a metal different from that of the organometallic precursor, and an oxidant to the upper part of a substrate; and reacting the provided one to form a thin film.

Abstract translation: 本发明提供一种挥发性得到改善并且与氧化剂的反应性优异的新型有机金属前体，以及使用该有机金属前体制备薄膜的方法。 有机金属前体包含金属; 和由式1表示的配体，其中R 1和R 2彼此相同或不同，并且是H或C 1 -C 5烷基。 优选有机金属前体的金属是选自锶（Sr），钡（Ba），钙（Ca），镁（Mg）和铍（Be）中的任何一种。 所述方法包括以下步骤：提供反应材料，其包含由式1表示的第一有机金属前体和含有与有机金属前体不同的金属的第二有机金属前体和氧化剂到基底的上部; 并使所提供的反应形成薄膜。