公开(公告)号：KR1020020017172A

公开(公告)日：2002-03-07

申请号：KR1020000050342

申请日：2000-08-29

Applicant: 삼성전자주식회사

Inventor： 이충섭 ,  정해균 ,  함창열

IPC: H01L21/304

Abstract: PURPOSE: A bath of cleaning a wafer is provided to control the possibility of a wafer trouble caused by contaminated water, by minimizing contamination of deionized water caused by outer circumstances of the bath when the wafer is cleaned by deionized water. CONSTITUTION: A bath's upper cover unit(13) prevents air in a contaminated cleaner room from being melted and diffused to the wafer cleaning bath. A bath's side exhaust apparatus prevents the air of the cleaner room from being induced through an exhaust hole when cleaning water used in an exhaust apparatus is exhausted. A bath's lower drain unit prevents the air of the cleaner room from being induced through the exhaust hole when the deionized water inside the bath is drained. A nitrogen supply unit is installed in the lower portion of the bath to prevent leakage of nitrogen gas inside the bath. The wafer cleaning bath intercepts cleaning surroundings inside the bath from outer surroundings.

Abstract translation: 目的：提供清洁晶片的浴液，以便在用去离子水清洁晶片时，通过最大限度地减少由外部环境引起的去离子水污染，从而控制由污染水引起的晶片故障的可能性。 构成：浴缸的上盖单元（13）防止污染的清洁室内的空气熔化并扩散到晶圆清洗槽。 当排气装置中使用的清洁用水被排出时，浴缸侧排气装置防止清洁室的空气通过排气孔感应。 浴室的下部排水单元可防止洗涤室内的去离子水排出时，清洁室的空气通过排气孔引入。 氮气供应单元安装在槽的下部，以防止浴内的氮气泄漏。 晶圆清洗槽拦截浴室内周围的清洁环境。