公开(公告)号：KR1020140108419A

公开(公告)日：2014-09-11

申请号：KR1020130021090

申请日：2013-02-27

Applicant: 삼성전자주식회사

Inventor： 김기현 ,  김연태 ,  조남진

IPC: H01L21/205

CPC classification number: C23C16/52 ,  C23C16/45527 ,  C23C16/45546 ,  C23C16/4557 ,  C23C16/46

Abstract: An atomic layer deposition apparatus is disclosed. The atomic layer deposition apparatus according to an embodiment of the present invention comprises: a substrate loading unit which includes a substrate loading plate on which a substrate is loaded and is provided inside a process chamber where an atomic layer deposition process is performed; an injector assembly which is coupled with the process chamber, is swept toward the substrate loaded on the substrate loading plate, and provides a plurality of reactants for depositing a multilayer film on the surface of the substrate; and multiple heat sources, which are arranged at different positions in the process chamber, and heat an inner space of the process chamber corresponding to different process temperatures for the reactants by selectively applying either a contact scheme, where the heat sources touch the substrate, or a non-contact scheme where the heat sources do not touch the substrate.

Abstract translation: 公开了一种原子层沉积装置。 根据本发明实施例的原子层沉积装置包括：基板装载单元，其包括基板装载板，基板装载板上装载有基板，并且设置在执行原子层沉积处理的处理室内; 与处理室耦合的喷射器组件朝着装载在基板装载板上的基板扫过，并提供多个反应物，用于在基板的表面上沉积多层膜; 和多个热源，其布置在处理室中的不同位置，并且通过选择性地施加接触方案（其中热源接触基底），加热对应于反应物的不同工艺温度的处理室的内部空间，或 非接触方案，其中热源不接触基底。

公开(公告)号：KR1020170006175A

公开(公告)日：2017-01-17

申请号：KR1020150096707

申请日：2015-07-07

Applicant: 삼성전자주식회사

Inventor： 조남진 ,  김연태 ,  박기수 ,  최은석 ,  한규희

IPC: H01L21/02 ,  H01L21/54 ,  H01L21/683 ,  H01L21/314

CPC classification number: H01L29/66742 ,  C23C16/45519 ,  C23C16/45574

Abstract: 인젝터, 상기인젝터를갖는박막형성장치, 및그 운전방법에관한것이다. 챔버의측벽에기판이드나드는출입구가배치된다. 상기챔버의내부에상기기판이안착되는서셉터가배치된다. 상기챔버의측벽에상기출입구와떨어진인젝터가배치된다. 상기챔버의측벽에상기출입구및 상기인젝터와떨어진배기구가배치된다. 상기인젝터는제1 부분및 제2 부분을갖는다. 상기제1 부분은제1 캐리어가스공급장치와연통되며수평폭이높이보다큰 제1 층토출구를갖는다. 상기제2 부분은상기제1 층토출구상에제1 반응가스공급장치와연통되며수평폭이높이보다큰 제2 층토출구를갖는다.

Abstract translation: 薄膜形成装置包括：喷射器，喷射器包括：分配器，包括连接到第一气体入口的第一分配部分和连接到第二气体入口的第二分配部分; 以及连接到所述分配器的引导件，所述引导件包括连接到所述第一分配部分的第一出口和连接到所述第二分配部分的第二出口，其中所述第二出口设置在所述第一出口上方。