반도체 히팅 시스템
    1.
    发明公开
    반도체 히팅 시스템 有权
    半导体加热系统

    公开(公告)号:KR1020090002974A

    公开(公告)日:2009-01-09

    申请号:KR1020070067425

    申请日:2007-07-05

    CPC classification number: H01L21/67098 G03F7/70875 H05B1/0233

    Abstract: The semiconductor heating system is provided to dispose the interference area at a part of two heaters and to reduce the temperature difference between heating plates. The semiconductor heating system comprises the heating plate(1) for loading the wafer and heating the wafer, a plurality of heaters(2) which is disposed at the lower part of the heating plate and heating the wafer. At this time, the interference part is formed in the heating plate. The heating plate is formed into the disc shape. A plurality of heaters is arranged in the columnar direction.

    Abstract translation: 提供半导体加热系统以在两个加热器的一部分处设置干涉区域并减小加热板之间的温差。 半导体加热系统包括用于加载晶片并加热晶片的加热板(1),设置在加热板的下部并加热晶片的多个加热器(2)。 此时,在加热板上形成干涉部。 加热板形成为盘状。 多个加热器沿圆柱方向排列。

    반도체 히팅 시스템
    2.
    发明授权
    반도체 히팅 시스템 有权
    半导体加热系统

    公开(公告)号:KR101343030B1

    公开(公告)日:2013-12-18

    申请号:KR1020070067425

    申请日:2007-07-05

    Abstract: 본발명에따른반도체히팅시스템은히팅플레이트와, 히팅플레이트의일부영역을개별적으로가열하는다수의히터를포함한것으로, 히팅플레이트에는이웃한두 히터의일부구간이서로교호적으로배치되는간섭부가마련되어있으므로, 두히터에의해개별적으로가열되는히팅플레이트의이웃한두 영역사이에발생할수 있는온도편차는줄어들게되는효과가있다.

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