公开(公告)号：KR1020080096880A

公开(公告)日：2008-11-04

申请号：KR1020070041719

申请日：2007-04-30

Applicant: 삼성전자주식회사

Inventor： 송인호 ,  조윤종 ,  이경철 ,  진정화

IPC: H01L21/324

CPC classification number: H01L21/67109 ,  H01L21/324 ,  H01L21/67063 ,  H01L21/68714

Abstract: An apparatus for treating substrate and a treating method of substrate are provided to effectively increase the temperature of substrate regardless of the material of the settling portion in which substrate is settled. An apparatus for treating substrate includes the settling portion(40) on which the substrate the substrate(200) is settled; the influx unit(60) connected to the separate space; the outlet part(90) connected to the separate space; the gas supply part(70) which is connected to the influx unit and supplies the gas to the separate space; the heating portion(80) heating up the gas supplied to the separate space. The substrate processing apparatus can effectively increase the temperature of substrate regardless of the material of the settling portion.

Abstract translation: 提供一种用于处理基板的设备和基板的处理方法，以有效地增加基板的温度，而不管其中沉积基板的沉降部分的材料如何。 一种处理衬底的设备包括沉积部分（40），衬底（200）沉积在该沉淀部分上; 连接到分离空间的流入单元（60） 所述出口部分（90）连接到所述单独的空间; 气体供给部（70），其与流入单元连接并将气体供给到分离空间; 加热部分（80）将供应到分离空间的气体加热。 基板处理装置可以有效地提高基板的温度，而与沉降部分的材料无关。