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公开(公告)号：KR101774496B1
公开(公告)日：2017-09-05
申请号：KR1020100124839
申请日：2010-12-08
Applicant: 삼성전자주식회사
CPC classification number: G06F12/0246 , G06F12/02 , G06F12/08 , G06F2212/7205
Abstract: 메모리장치의동작방법이개시되다. 상기메모리장치의동작방법은제1블록에저장된복수의유효데이터중 일부를제2블록으로카피하는단계; 버퍼메모리에저장된제1데이터를상기제2블록으로카피하는단계; 및상기제1블록에저장된상기복수의유효데이터중 나머지를상기제2블록으로카피하는단계를포함한다.
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公开(公告)号：KR101717081B1
公开(公告)日：2017-03-28
申请号：KR1020110026054
申请日：2011-03-23
Applicant: 삼성전자주식회사
Inventor： 천원문
CPC classification number: G06F12/0638 , G06F12/0866 , G06F12/0868 , G06F12/0871 , G06F12/0873 , G06F13/1668 , G06F13/1673
Abstract: 본발명의실시예에따른저장장치는, 플래시메모리, 상기플래시메모리에기입될데이터를일시저장하되, 휘발성램과비휘발성램을포함하는버퍼메모리, 및호스트로부터쓰기요청되는데이터의라이트패턴에따라서상기쓰기요청되는데이터를상기휘발성램 또는상기비휘발성램에저장하는메모리컨트롤러를포함하되, 상기메모리컨트롤러는상기비휘발성램에상기쓰기요청된데이터가저장되면, 상기쓰기요청에대한완료(Complete)를상기호스트에전달한다.
Abstract translation: 根据本发明的一个实施例，提供了一种存储装置，包括：闪存;缓冲存储器，用于临时存储要写入闪存的数据，缓冲存储器包括易失性RAM和非易失性RAM; 存储器控制器，用于存储请求写入易失性RAM或非易失性RAM中的数据;当写入请求数据存储在非易失性RAM中时， 给主持人。
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公开(公告)号：KR1020100111992A
公开(公告)日：2010-10-18
申请号：KR1020090030506
申请日：2009-04-08
Applicant: 삼성전자주식회사
Inventor： 천원문
CPC classification number: G06F12/0246 , G06F2212/7204 , G06F2212/7206
Abstract: PURPOSE: A flash memory storage device and a computing system including the device are provided to improve the write performance of the flash memory storage device by adjusting the physical space. CONSTITUTION: A storage media(2500) has the physical space and stores data. A controller(2300) varies the capacity information showing the physical space as described above in response to request from outside, and adjusts the physical space of the storage media. The adjusted physical space as described above is used as a user address space. The storage except the adjusted physical space as described above is used as the space for improving the write performance of the flash memory storage device.
Abstract translation: 目的：提供闪存存储设备和包括该设备的计算系统，以通过调整物理空间来提高闪存存储设备的写入性能。 规定：存储介质（2500）具有物理空间并存储数据。 控制器（2300）响应于来自外部的请求改变如上所述的表示物理空间的容量信息，并且调整存储介质的物理空间。 如上所述调整后的物理空间用作用户地址空间。 使用如上所述的调整后的物理空间以外的存储作为用于提高闪存存储装置的写入性能的空间。
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公开(公告)号：KR100817087B1
公开(公告)日：2008-03-27
申请号：KR1020070015089
申请日：2007-02-13
Applicant: 삼성전자주식회사
CPC classification number: G06F12/0246 , G06F12/0866 , G06F2212/214 , G06F2212/7201 , G11C16/06
Abstract: A method for operating a buffer cache of a storage device including a flash memory is provided to improve operation characteristics of the storage device more rapidly, by comprising an efficient DRAM buffer cache search algorithm for the flash memory as using a look-up table having position information for the region where a page is located. According to a method for operating a buffer cache of a storage device including a flash memory, a logic block address(LBA) requested from a host is converted into a logic page number. The region where a page corresponding to the logic page number is located is searched. A physical block address corresponding to the logic block address is generated by referring to a mapping table of the region where the page is located. The region where the page is located is searched. A look-up table(400) having information about the region where pages of the flash memory are located is searched.
Abstract translation: 提供了一种用于操作包括闪速存储器的存储设备的缓冲器高速缓存的方法，通过包括用于闪速存储器的有效DRAM缓冲器高速缓存高速缓存搜索算法，使用具有位置的查找表来提高存储设备的操作特性 页面所在地区的信息。 根据用于操作包括闪存的存储设备的缓冲器高速缓存的方法，将从主机请求的逻辑块地址（LBA）转换为逻辑页号。 搜索与逻辑页码对应的页面所在的区域。 通过参考页面所在的区域的映射表来生成对应于逻辑块地址的物理块地址。 搜索页面所在的区域。 搜索具有关于闪存的页面所在的区域的信息的查找表（400）。
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公开(公告)号：KR100771521B1
公开(公告)日：2007-10-30
申请号：KR1020060105692
申请日：2006-10-30
Applicant: 삼성전자주식회사
CPC classification number: G06F3/0613 , G06F3/0631 , G06F3/0632 , G06F3/064 , G06F3/0679 , G06F12/0246 , G06F2212/1021 , G06F2212/2022 , G06F2212/7202 , G06F2212/7208 , G11C2211/5641
Abstract: A flash memory device having a multi-level cell and a data writing method thereof are provided to increase write speed and to reduce the number of erase operations of a block. According to a method for writing data in a flash memory system constituting an address map by a log block mapping scheme, a write pattern of data to be written into a log block(200) is judged. One of an SLC(Single-Leveled Cell) block and an MLC(Multi-Leveled Cell) block is allocated as the log block according to the write pattern. The write pattern includes a sequential write pattern written in a sequential page unit to the log block and a random write pattern written in a random page unit to the log block.
Abstract translation: 提供具有多电平单元及其数据写入方法的闪速存储器件以增加写入速度并减少块的擦除操作次数。 根据通过对数块映射方式在构成地址映射的闪速存储器系统中写入数据的方法，判断要写入对数块（200）的数据的写入模式。 根据写入模式，将SLC（单级单元）块和MLC（多级单元）块之一分配为日志块。 写入模式包括以顺序页面单元写入日志块的顺序写入模式和以随机页面单位写入日志块的随机写入模式。
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Patent Agency Ranking
公开(公告)号：KR101861545B1
公开(公告)日：2018-05-29
申请号：KR1020120000237
申请日：2012-01-02
Applicant: 삼성전자주식회사
IPC: G06F12/00
CPC classification number: G06F12/0246 , G06F3/061 , G06F3/064 , G06F17/30368 , G06F17/30371 , G06F2212/7202 , Y02D10/13
Abstract: 저장장치의데이터관리방법이제공된다. 저장장치의데이터관리방법은, 호스트로부터논리페이지를제공받아논리페이지의실제기록시간(actual time stamp)을계산하고, 논리페이지가저장된저장장치의블록을찾아블록의기록시간(time stamp)과, 블록에저장된상기논리페이지의페이지오프셋(page offset)을탐지하고, 블록의기록시간과페이지오프셋을이용하여, 블록에저장된논리페이지의근사기록시간(approximate time stamp)을계산하고, 실제기록시간과근사기록시간의차이가설정된임계값보다작으면논리페이지를제1 상태의논리페이지로판단하고, 실제기록시간과상기근사기록시간의차이가설정된임계값보다크면상기논리페이지를상기제1 상태와다른제2 상태의논리페이지로판단하는것을포함한다.
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公开(公告)号：KR1020130081508A
公开(公告)日：2013-07-17
申请号：KR1020120002524
申请日：2012-01-09
Applicant: 삼성전자주식회사
CPC classification number: G06F12/0246 , G06F1/24 , G06F1/28 , G06F11/073 , G06F11/0757 , G06F11/1441 , G06F2212/7203 , G06F2212/7205 , G06F2212/7208 , Y02D10/13
Abstract: PURPOSE: A method of controlling a memory system when sudden power-off occurs is provided to minimize a power-off time by resetting a flash memory device and dumping data to the flash memory device when time-out is completed. CONSTITUTION: A first time out (TIMEOUT 1) is counted when sudden power-off occurs. A first flash memory device is reset when the first time out expires. Data is dumped to the first flash memory device.
Abstract translation: 目的：提供突发断电时控制存储器系统的方法，以便在超时完成时通过复位闪存设备和将数据转储到闪存设备来最小化掉电时间。 构成：突然断电发生时，首次超时（TIMEOUT 1）计数。 当第一次超时时，第一个闪存设备被复位。 数据被转储到第一个闪存设备。
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公开(公告)号：KR1020130079007A
公开(公告)日：2013-07-10
申请号：KR1020120000237
申请日：2012-01-02
Applicant: 삼성전자주식회사
IPC: G06F12/00
CPC classification number: G06F12/0246 , G06F3/061 , G06F3/064 , G06F17/30368 , G06F17/30371 , G06F2212/7202 , Y02D10/13
Abstract: PURPOSE: A data managing method of a storage device reduces time consumed in garbage collection during operation of a non-volatile memory device, improving overall performance. CONSTITUTION: The real write time of a logic page is calculated by receiving the logic page from a host (S100). A page offset of the logic page stored in a block and the write time of the block are detected by finding a block of a storage device storing the logic page (S200). The approximation write time of the logic page stored in the block is calculated by using the record time and page the offset of the block (300). If the difference between the real write time and the approximation write time is less than a predetermined threshold, then the logic page is determined as a first state logic page (S400). If the difference between the real write time and the approximation write time is greater than a predetermined threshold, then the logic page is determined as a second state logic page.
Abstract translation: 目的：存储设备的数据管理方法可以减少非易失性存储设备运行过程中垃圾收集的时间，提高整体性能。 构成：通过从主机接收逻辑页面来计算逻辑页面的实际写入时间（S100）。 通过找到存储逻辑页面的存储装置的块来检测块中存储的逻辑页的页偏移量和块的写入时间（S200）。 通过使用记录时间和页面块来计算块中存储的逻辑页面的近似写入时间（300）。 如果实际写入时间和近似写入时间之间的差小于预定阈值，则逻辑页面被确定为第一状态逻辑页面（S400）。 如果实际写入时间和近似写入时间之间的差大于预定阈值，则逻辑页面被确定为第二状态逻辑页面。
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公开(公告)号：KR1020090129624A
公开(公告)日：2009-12-17
申请号：KR1020080055641
申请日：2008-06-13
Applicant: 삼성전자주식회사
CPC classification number: G11C16/10 , G11C11/5628 , G11C16/0483 , G11C16/26 , G11C16/3409
Abstract: PURPOSE: A memory system and a reading fail preventing method thereof are provided to prevent read fail by a soft program, thereby improving the performance and reliability of the memory system. CONSTITUTION: A memory system(10) comprises a flash memory(100) and a memory controller(200). The flash memory performs write, read, and erase operation according to the control of the memory controller. The flash memory stores read count data(105). The read count data is stored in the meta domain or user data area of the flash memory. The memory controller applies a read command, an address, and a control signal to the flash memory in the reading operation process. The flash memory receives the read command and the address from the memory controller. The flash memory supplies a read voltage to a corresponding word line.
Abstract translation: 目的：提供一种存储系统及其读取失败防止方法，以防止软程序的读取失败，从而提高存储系统的性能和可靠性。 构成：存储系统（10）包括闪存（100）和存储器控制器（200）。 闪存根据存储器控制器的控制执行写入，读取和擦除操作。 闪存存储读取计数数据（105）。 读取计数数据存储在闪速存储器的元域或用户数据区中。 存储器控制器在读取操作过程中向闪速存储器应用读取命令，地址和控制信号。 闪存从存储器控制器接收读取命令和地址。 闪存将读取电压提供给相应的字线。
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公开(公告)号：KR100885181B1
公开(公告)日：2009-02-23
申请号：KR1020070012198
申请日：2007-02-06
Applicant: 삼성전자주식회사
CPC classification number: G06F12/0246 , G06F2212/7201
Abstract: 본 발명은 그룹 맵핑 동작을 수행하는 메모리 시스템 및 그것의 어드레스 맵핑 방법에 관한 것이다. 본 발명에 따른 메모리 시스템은 파일 시스템; 복수의 데이터 블록 및 복수의 로그 블록을 갖는 플래시 메모리; 및 상기 파일 시스템과 상기 플래시 메모리 사이의 어드레스 맵핑 동작을 관리하기 위한 플래시 변환 레이어를 포함한다. 여기에서, 상기 플래시 변환 레이어는 상기 복수의 데이터 블록 중 일정 수의 데이터 블록을 하나의 데이터 블록 그룹으로 관리하고, 상기 복수의 로그 블록 중 적어도 하나 이상의 로그 블록을 하나의 로그 블록 그룹으로 관리하며, 상기 로그 블록 그룹에 속한 각각의 로그 블록이 상기 데이터 블록 그룹에 속한 각각의 데이터 블록에 할당될 수 있도록 어드레스 맵핑 동작을 관리한다. 본 발명에 따른 메모리 시스템은 그룹 맵핑 방법을 사용함으로, 로그 블록의 페이지 이용률을 높일 수 있다. 또한, 본 발명은 머지 연산 및 블록 소거 횟수를 줄일 수 있다.
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