公开(公告)号：KR1020010036499A

公开(公告)日：2001-05-07

申请号：KR1019990043528

申请日：1999-10-08

Applicant: 삼성전자주식회사

Inventor： 강종묵 ,  최선희

IPC: H01L21/302

Abstract: PURPOSE: A chemical mechanical polishing(CMP) apparatus for a semiconductor wafer is provided to prevent erosion of a disc head, by preventing contaminant mixed with slurry and deionized water from penetrating the disc head of a pad conditioner in a cleaning process using deionized water of high pressure. CONSTITUTION: A pad conditioner disc head part(48) polishes a wafer settled on a pad, and moves to a clean cup(40) for an interval of time to clean contaminant on the pad after the polishing process and stands by. A cleaning unit sprays deionized water of high pressure to the wafer to clean the contaminant on the pad after the polishing process. A clean cup guide(50) prevents mixture liquid of the deionized water and the contaminant reflected from the pad from penetrating the pad conditioner disc head part standing by in the clean cup. A clean cup guide driving unit(46) transfers the clean cup guide to a position intercepting an inlet of the pad conditioner disc head part or transfers the clean cup guide from the position to another position.

Abstract translation: 目的：提供用于半导体晶片的化学机械抛光（CMP）装置，以防止盘头的侵蚀，通过防止在清洁过程中与浆料和去离子水混合的污染物渗透垫调节剂的盘头，使用去离子水 高压力。 构成：衬垫调节盘头部分（48）抛光沉积在衬垫上的晶片，并在抛光过程和待机之后移动到干净的杯（40）一段时间以清洁衬垫上的污染物。 清洁装置将抛光过程中的高压去离子水喷射到晶片上以清洁焊盘上的污染物。 清洁杯​​导向器（50）防止去离子水的混合液体和从衬垫反射的污染物渗透在清洁杯中的衬垫调节盘头部。 清洁杯​​引导器驱动单元（46）将清洁杯引导件传送到拦截垫调节器盘头部分的入口的位置，或将清洁杯引导件从该位置传送到另一位置。