公开(公告)号：KR1020040035232A

公开(公告)日：2004-04-29

申请号：KR1020020064010

申请日：2002-10-19

Applicant: 삼성전자주식회사

Inventor： 최준우

IPC: H01L21/68

Abstract: PURPOSE: A heater block for a wafer bake process is provided to be capable of preventing a guide pin from being deviated out of a pin hole due to vibration. CONSTITUTION: A heater block(200) for a wafer bake process is provided with a heater block body(220) for loading a wafer, a plurality of lift pins(240) installed in a wafer loading region of the heater block for moving the wafer up and down, a plurality of pin holes formed along the wafer loading region, and a plurality of guide pins inserted into the pin holes. At this time, each guide pin is made of a cylindrical body and a semi-spherical type head as one piece. The diameter of the head is larger than that of the cylindrical body. The height of the guide pin head is larger than that of a conventional guide pin head. The diameter of the pin hole inlet is as large as that of the guide pin head. Preferably, six pin holes and six guide pins are used for the heater block.

Abstract translation: 目的：提供用于晶片烘烤处理的加热器块，以能够防止导向销由于振动而偏离销孔。 构成：用于晶片烘烤处理的加热器块（200）设置有用于加载晶片的加热器块体（220），安装在加热器块的晶片加载区域中的多个提升销（240），用于移动晶片 沿着晶片装载区域形成的多个针孔以及插入销孔中的多个引导销。 此时，每个引导销由圆柱形主体和半球形头形成为一体。 头部的直径大于圆柱体的直径。 导销头的高度大于传统导销头的高度。 销孔入口的直径与导销头的直径一样大。 优选地，加热器块使用六个针孔和六个导向销。

公开(公告)号：KR1020070014471A

公开(公告)日：2007-02-01

申请号：KR1020050069134

申请日：2005-07-28

Applicant: 삼성전자주식회사

Inventor： 김동영 ,  최준우 ,  최철환

IPC: H01L21/205 ,  H01L21/3065

CPC classification number: H01L21/68714 ,  H01L21/68

Abstract: A substrate processing method is provided to avoid scratches and damages of a substrate by preventing the substrate from being slid from the upper surface of a chuck without using an additional substrate sliding avoiding apparatus when the substrate is unloaded from a process chamber after a predetermined semiconductor process is performed. A substrate is loaded into a process chamber so as to be placed on a chuck(S20). Source gas, inert gas and oxygen gas are injected into the process chamber to perform a predetermined reaction process on the substrate, and a pumping process is performed to exhaust the process chamber and adjust the pressure of the process chamber(S30). When the reaction process is finished while the pumping process is performed, the supply of the source gas stops(S40). The substrate is separated from the chuck by a predetermined interval. The supply of the inert gas and the oxygen gas and the pumping are stopped(S60). The substrate is unloaded from the process chamber(S70). The source gas includes TEOS and the inert gas includes helium gas.

Abstract translation: 提供了一种基板处理方法，以便在预定的半导体工艺之后，当从处理室卸载基板时，通过防止基板从卡盘的上表面滑动而不使用附加的基板滑动避免装置来避免基板的划伤和损坏 被执行。 将基板装载到处理室中以放置在卡盘上（S20）。 源气体，惰性气体和氧气被注入到处理室中以对基板执行预定的反应过程，并且执行泵送过程以排出处理室并调节处理室的压力（S30）。 当进行泵送过程的反应过程结束时，源气体的供给停止（S40）。 将衬底与卡盘分开预定间隔。 停止供给惰性气体和氧气以及泵送（S60）。 从处理室卸载基板（S70）。 源气体包括TEOS，惰性气体包括氦气。

公开(公告)号：KR100631926B1

公开(公告)日：2006-10-04

申请号：KR1020050089075

申请日：2005-09-26

Applicant: 삼성전자주식회사

Inventor： 김경태 ,  최준우 ,  최철환

IPC: H01L21/02

Abstract: A layout method of semiconductor manufacturing equipment and a bit of mock up equipment for a layout are provided to reduce fabrication costs by minimizing a main equipment installing time. A layout drawing is formed on the basis of equipment manual. A bit of mock up equipment with the same structure as that of main equipment is provided. The layout drawing is arranged on a bottom of a main equipment installing space. The mock up equipment is properly arranged on the layout drawing. Main metal lines and pipelines are arranged within the main equipment installing space. End portions of the main metal lines and pipelines are connected with mock up metal line and pipeline connecting ports. The existence of short and leak in the mock up metal line and pipeline connecting ports is checked. A cleaning process is performed on the main pipelines and the existence of particles is checked. The mock up equipment is removed therefrom. The main equipment is arranged in position by connecting main metal line and pipeline connecting ports with the main metal lines and pipelines.

Abstract translation: 提供半导体制造设备的布局方法和一些模拟布局设备，以通过最小化主设备安装时间来降低制造成本。 布局图是根据设备手册形成的。 提供一些与主设备具有相同结构的模拟设备。 布局图布置在主设备安装空间的底部。 模拟设备正确安排在布局图上。 主要金属线和管道布置在主设备安装空间内。 主要金属线和管道的末端部分与模拟金属线和管道连接端口连接。 检查模拟金属线和管道连接端口是否存在短路和泄漏。 在主管道上执行清洁过程并检查颗粒的存在。 模拟设备从中移除。 主要设备通过连接主要金属线和管道连接口与主要金属线和管道布置就位。

公开(公告)号：KR1020030068648A

公开(公告)日：2003-08-25

申请号：KR1020020008132

申请日：2002-02-15

Applicant: 삼성전자주식회사

Inventor： 최준우

IPC: H01L21/205

Abstract: PURPOSE: Atmospheric pressure chemical vapor deposition(APCVD) equipment is provided to minimize a defect ratio and prevent the waste of a flowable oxide(FOX) solution by forming a scale for checking the quantity of a residual FOX solution in a storing receptacle. CONSTITUTION: A thin film is formed on a wafer by using a predetermined chemical solution(160). A wafer chuck(120) on which the wafer is placed is installed inside a reaction chamber(110). The chemical solution that will be supplied to the reaction chamber is stored in the storing receptacle(150). The scale(170) for checking the quantity of a residual chemical solution is formed on the surface of the storing receptacle to determine the quantity of the residual chemical solution. One end of a supply pipe(130) is connected to the storing receptacle and the other end of the supply pipe is connected to the reaction chamber so that the chemical solution stored in the storing receptacle is supplied to the inside of the reaction chamber.

Abstract translation: 目的：提供大气压化学气相沉积（APCVD）设备以最小化缺陷率，并通过形成用于检查储存容器中剩余FOX溶液量的标尺来防止可流动氧化物（FOX）溶液的浪费。 构成：通过使用预定的化学溶液（160）在晶片上形成薄膜。 其上放置晶片的晶片卡盘（120）安装在反应室（110）内。 将供应到反应室的化学溶液储存在储存容器（150）中。 在储存容器的表面上形成用于检查残留化学溶液量的标尺（170），以确定残留的化学溶液的量。 供给管（130）的一端与储存容器连接，供给管的另一端连接到反应室，使得储存在储存容器中的化学溶液被供给到反应室的内部。

公开(公告)号：KR102257370B1

公开(公告)日：2021-05-31

申请号：KR1020200133131

申请日：2020-10-15

Applicant: 삼성전자주식회사

Inventor： 김영록 ,  이주관 ,  최준우

IPC: G09G5/22

Abstract: 외부로보여지는크기가일정한제1 부분및 상기외부로보여지는크기가변화하는제2 부분을포함하는디스플레이, 상기디스플레이를제어하는디스플레이드라이버 IC, 상기디스플레이의열화를보상하는열화보상알고리즘을저장하는메모리, 및상기디스플레이드라이버 IC 및상기메모리와작동적으로연결된프로세서를포함하고, 상기프로세서는, 상기제1 부분및 상기제2 부분을구분하는제1 경계및 상기제2 부분을복수의가상영역들로구분하는제2 경계를설정하고, 상기복수의가상영역들은서로인접한제1 영역및 제2 영역을포함하는, 상기복수의가상영역들각각의누적사용시간및 복수의가상영역들각각의구동과관련된적어도하나의특성값에기반하여상기복수의영역들각각의종합누적값들을산출하고, 상기제1 영역의종합누적값인제1 종합누적값 및상기제2 영역의종합누적값인제2 종합누적값의차이값이지정된임계값 이상인경우, 상기제2 경계중 상기제1 영역및 상기제2 영역사이의경계를열화경계로설정하고, 및상기열화경계를포함하는열화데이터를상기디스플레이드라이버 IC로전달하도록설정된전자장치가개시된다. 이외에도명세서를통해파악되는다양한실시예가가능하다.

公开(公告)号：KR100706253B1

公开(公告)日：2007-04-12

申请号：KR1020050069134

申请日：2005-07-28

Applicant: 삼성전자주식회사

Inventor： 김동영 ,  최준우 ,  최철환

IPC: H01L21/205 ,  H01L21/3065

Abstract: 본 발명은 기판 처리 방법에 관한 것으로, 보다 상세하게는 기판의 슬라이딩을 방지를 위한 기판 처리 방법에 관한 것이다.
본 발명에 따른 기판 처리 방법은 공정 챔버 내부로 기판이 로딩되어 기판이 척에 안착되는 단계, 공정 챔버 내부로 소스 가스, 불활성 가스, 그리고 산소 가스들이 분사되어 상기 기판 상에 소정의 반응 공정이 수행되고, 상기 공정 챔버 내부의 배기 및 압력 조절을 위해 펌핑하는 단계, 상기 펌핑이 유지되는 상태에서 상기 반응 공정이 완료되면, 상기 소스 가스의 공급이 중단되는 단계, 상기 기판이 척으로부터 소정의 간격이 이격되는 단계, 상기 불활성 가스 및 상기 산소 가스의 공급 및 상기 펌핑이 중단되는 단계, 그리고 상기 기판이 상기 공정 챔버 외부로 언로딩되는 단계를 포함한다.
상기와 같은 구성을 갖는 기판 처리 장치는 소정의 반도체 공정을 수행하는 공정 챔버로부터 기판을 언로딩시킬 때 기판이 척의 상부면에서 슬라이딩 되는 현상을 방지할 수 있으므로 기판이 척의 상부면에 슬라이딩되어 발생되는 기판의 스크래치와 파손을 방지한다.
기판 처리 장치, 슬라이딩 방지,

公开(公告)号：KR1020020039114A

公开(公告)日：2002-05-25

申请号：KR1020000069022

申请日：2000-11-20

Applicant: 삼성전자주식회사

Inventor： 최준우

IPC: H01L21/00

Abstract: PURPOSE: An apparatus for supplying chemical gas for fabricating a semiconductor device is provided to increase yield of a wafer, by preventing a gas supplying pipe from being curved so that chemical gas is smoothly supplied. CONSTITUTION: The chemical gas is stored in a gas storing receptacle(5). The gas supplying pipe(13) supplies the chemical gas contained in the gas storing receptacle to process equipment(11), connected to the gas storing receptacle. A curve preventing pipe(7a) is formed on the inner surface of a cap(7) to prevent the gas supplying pipe connected to the gas storing receptacle from being curved.

Abstract translation: 目的：提供一种用于提供用于制造半导体器件的化学气体的装置，以通过防止气体供给管弯曲使得化学气体平稳地供应来提高晶片的产量。 构成：化学气体储存在储气容器（5）中。 气体供给管（13）将容纳在气体收容容器中的化学气体供给到与气体收容容器连接的处理设备（11）。 在盖（7）的内表面上形成曲线防止管（7a），以防止连接到气体存储容器的气体供给管弯曲。

公开(公告)号：KR1020030014846A

公开(公告)日：2003-02-20

申请号：KR1020010048729

申请日：2001-08-13

Applicant: 삼성전자주식회사

Inventor： 최준우

IPC: H01L21/02

Abstract: PURPOSE: A chemical supply system in a fabrication process of a semiconductor device is provided to purge a transferring tube by using gases supplied to a storage tank. CONSTITUTION: A receptacle(110) is used for receiving chemicals(116). A cover(114) is installed on an upper portion of the receptacle(110). A chemical transferring tube(120) is installed at the outside of the receptacle(110) in order to supply the chemicals(116) to a processing apparatus(200). A gas injection tube(130) is installed at ones side of the cover(114) in order to inject helium gas into the inside of the receptacle(110). A purge tube(140) is used for connecting the chemical transferring tube(120) with the gas injection tube(130). A three-wafer valve(150) is installed at a connection portion between the gas injection tube(130) and the purge tube(140). The three-wafer valve(150) is installed at the connection portion between the chemical transferring tube(120) and the purge tube(140).

Abstract translation: 目的：提供半导体器件的制造工艺中的化学品供应系统，以便通过使用提供给储罐的气体来吹扫传送管。 构成：容器（110）用于接收化学物质（116）。 盖（114）安装在容器（110）的上部。 化学品转移管（120）安装在容器（110）的外部，以便将化学品（116）供应到处理设备（200）。 气体注入管（130）安装在盖（114）的一侧，以便将氦气注入到容器（110）的内部。 吹扫管（140）用于将化学转移管（120）与气体注入管（130）连接。 三孔阀（150）安装在气体注入管（130）和净化管（140）之间的连接部分处。 三晶片阀（150）安装在化学转移管（120）和净化管（140）之间的连接部分。