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    페로센 함유 전도성 고분자, 이를 이용한 유기 메모리 소자및 그의 제조방법
    2.
    发明公开
    페로센 함유 전도성 고분자, 이를 이용한 유기 메모리 소자및 그의 제조방법 失效
    含有导电聚合物的有机物，使用其的有机存储器件及其制备方法

    公开(公告)号：KR1020080043133A

    公开(公告)日：2008-05-16

    申请号：KR1020060111777

    申请日：2006-11-13

    Applicant: 삼성전자주식회사

    Inventor： 이광희 ,  최태림 ,  주원제

    IPC: H01L27/115

    CPC classification number: H01B1/127 ,  C08G61/12 ,  C08G61/126 ,  C08G2261/124 ,  C08G2261/312 ,  C08G2261/3142 ,  C08G2261/3223 ,  C08G2261/344 ,  C08G2261/376 ,  C08G2261/411 ,  H01L27/285 ,  H01L51/0043 ,  H01L51/0077

    Abstract: A ferrocene containing conductive polymer, an organic memory device using the same, and a preparing method thereof are provided to reduce a size, to shorten a switching time, to lower an operational voltage, and to reduce a manufacturing cost. An organic memory device(100) includes a first electrode(10), a second electrode(30), and an organic active layer(20). The organic active layer is sandwiched between the first electrode and the second electrode. When a predetermined voltage is applied to the organic memory device, a resistance of the organic active layer represents bistability. The organic active layer of the organic memory device has conductivity as well as the bistability. A ferrocene containing conductive polymer is a conjugate polymer and has electrons or hole conductivity by conjugation.

    Abstract translation: 提供含二茂铁的导电聚合物，使用其的有机存储装置及其制备方法，以减小尺寸，缩短开关时间，降低工作电压，降低制造成本。 有机存储装置（100）包括第一电极（10），第二电极（30）和有机活性层（20）。 有机活性层夹在第一电极和第二电极之间。 当向有机存储器件施加预定电压时，有机活性层的电阻表示双稳态。 有机存储装置的有机活性层具有导电性和双稳态性。 含二茂铁的导电聚合物是共轭聚合物，并且通过共轭具有电子或空穴导电性。

    신규한 페로센 함유 고분자 및 이를 이용한 유기 메모리소자
    3.
    发明公开
    신규한 페로센 함유 고분자 및 이를 이용한 유기 메모리소자 失效
    含有聚合物和含有该聚合物的有机存储装置的新颖的方法

    公开(公告)号：KR1020070084855A

    公开(公告)日：2007-08-27

    申请号：KR1020060017155

    申请日：2006-02-22

    Applicant: 삼성전자주식회사

    Inventor： 최태림 ,  이광희 ,  이상균 ,  주원제

    IPC: C08G61/12 ,  C08F2/00 ,  C08F4/26 ,  B82Y10/00

    CPC classification number: C08G79/00 ,  B82Y10/00 ,  C07F17/02 ,  C08G61/02 ,  C08G61/126 ,  G11C13/0014 ,  G11C13/0016 ,  G11C2213/77 ,  H01L51/0038 ,  H01L51/004 ,  H01L51/0083 ,  H01L51/009 ,  H01L51/0591 ,  H01L51/0595

    Abstract: A novel ferrocene-containing polymer is provided to give excellent characteristics when used as an organic active layer of an organic memory device, and thus to embody an organic memory device having short switching time, low operation voltage, low production cost, and good reliance. A novel ferrocene-containing polymer has a structure represented by the following chemical formula 1 or chemical formula 2. In the chemical formula 1, Rs are the same and different from each other and are C1-20 alkyl, C3-20 cycloalkyl, C5-30 heterocycloalkyl, C2-20 alkenyl, C6-20 aryl, C5-30 heteroaryl, C7-20 arylalkyl, or C7-30 heteroarylalkyl, A and A' are a hydrogen atom, C1-20 alkyl, C3-20 cycloalkyl, C5-30 heterocycloalkyl, C2-20 alkenyl, C6-20 aryl, C5-30 heteroaryl, C7-20 arylalkyl, or C7-30 heteroarylalkyl, or OR(wherein, R' is C1-20 alkyl, C3-20 cycloalkyl, C5-30 heterocycloalkyl, C2-20 alkenyl, C6-20 aryl, C5-30 heteroaryl, C7-20 arylalkyl, or C7-30 heteroarylalkyl, and n is 1-1000). In the chemical formula 2, Rs are the same or different from each other and are C1-20 alkyl, C3-20 cycloalkyl, C5-30 heterocycloalkyl, C2-20 alkenyl, C6-20 aryl, C5-30 heteroaryl, C7-20 arylalkyl, or C7-30 heteroarylalkyl, B is a hydrogen atom, C1-20 alkyl group, substituted or unsubstituted C5-20 aromatic group, or substituted or unsubstituted C5-20 heteroaromatic group containing an heteroatom of O, S, or N(wherein, the aromatic group or heteroaromatic group has at least one substituent selected from a C1-12 alkyl group, vinyl group, alkoxy group, ester group, carboxyl group, thiol group, or amine group), D is a substituted or unsubstituted C5-30 aromatic group or substituted or unsubstituted C5-30 heteroaromatic group containing an heteroatom of O, S, or N(wherein, the aromatic group or heteraromatic group has at least one substituent selected from a C1-12 alkyl group, vinyl group, alkoxy group, ester group, carboxyl group, thiol group, or amine group), and n is 1-1000.

    Abstract translation: 提供了一种含有二茂铁的聚合物，当用作有机存储器件的有机活性层时具有优异的特性，从而具有开关时间短，操作电压低，制造成本低，依赖性好的有机存储元件。 新型含二茂铁的聚合物具有由以下化学式1或化学式2表示的结构。在化学式1中，Rs相同且不同，为C1-20烷基，C3-20环烷基，C5- 30个杂环烷基，C2-20烯基，C6-20芳基，C5-30杂芳基，C7-20芳基烷基或C7-30杂芳基烷基，A和A'是氢原子，C1-20烷基，C3-20环烷基， 30个杂环烷基，C2-20烯基，C6-20芳基，C5-30杂芳基，C7-20芳基烷基或C7-30杂芳基烷基，或OR（其中，R'为C1-20烷基，C3-20环烷基，C5-30 杂环烷基，C2-20烯基，C6-20芳基，C5-30杂芳基，C7-20芳基烷基或C7-30杂芳基烷基，n为1-1000）。 在化学式2中，R 5彼此相同或不同，为C 1-20烷基，C 3-20环烷基，C 5-30杂环烷基，C 2-20烯基，C 6-20芳基，C 5-30杂芳基，C 7-20 芳基烷基或C7-30杂芳基烷基，B是氢原子，C1-20烷基，取代或未取代的C5-20芳族基团，或含有O，S或N杂原子的取代或未取代的C5-20杂芳族基团（其中 芳族基或杂芳族基具有至少一个选自C 1-12烷基，乙烯基，烷氧基，酯基，羧基，硫醇基或胺基的取代基），D是取代或未取代的C5-30 芳香基或含有O，S或N的杂原子的取代或未取代的C5-30杂芳基（其中芳族基团或杂芳基具有至少一个选自C 1-12烷基，乙烯基，烷氧基， 酯基，羧基，硫醇基或胺基），n为1-1000。

    전기 변색 디스플레이 소자 및 이의 제조 방법
    6.
    发明授权
    전기 변색 디스플레이 소자 및 이의 제조 방법 有权
    电铬显示装置及其制造方法

    公开(公告)号：KR100872727B1

    公开(公告)日：2008-12-08

    申请号：KR1020070011145

    申请日：2007-02-02

    Applicant: 삼성전자주식회사

    Inventor： 노창호 ,  조성헌 ,  송기용 ,  최태림 ,  타마라

    IPC: G02F1/15 ,  B82Y30/00

    CPC classification number: G02F1/1521 ,  B82Y20/00 ,  G02F1/1523 ,  G02F1/153 ,  G02F2202/36

    Abstract: 본 발명은 마주 보는 한 쌍의 투명 기판 및 상기 투명 기판 상에 각각 형성된 양극 전극부 및 음극 전극부를 포함하고 상기 양극 전극부 및 음극 전극부 사이에는 전해질 층이 배치되며, 상기 음극 전극부 상에는 나노 구조체의 전기 발색층이 구비되어 있고, 상기 양극 전극부 상에는 전도성 화합물이 코팅되어 형성된 산화환원 촉진제(redox promoter) 층이 구비되어 있는 전기 변색 디스플레이 소자를 제공한다. 상기 전기 변색 디스플레이 소자는 제조 공정 효율 및 구동 특성이 우수하다.

    유기 메모리 소자 및 그의 제조방법
    7.
    发明公开
    유기 메모리 소자 및 그의 제조방법 有权
    有机存储器件及其制备方法

    公开(公告)号：KR1020070112565A

    公开(公告)日：2007-11-27

    申请号：KR1020060045624

    申请日：2006-05-22

    Applicant: 삼성전자주식회사

    Inventor： 주원제 ,  최태림 ,  이상균

    IPC: H01L27/115 ,  H01L21/8247

    CPC classification number: G11C13/0014 ,  B82Y10/00 ,  G11C13/0016 ,  H01L51/004 ,  H01L51/0095 ,  H01L51/0579

    Abstract: An organic memory device and a manufacturing method thereof are provided to reduce a manufacturing cost by a simple process of a low cost like a spin casting process, and to obtain a low operational voltage and have a large on/off ratio. A first electrode(10) is formed on a substrate. An ion transfer layer(20) is formed on the first electrode. A second electrode(30) is formed to contact with the ion transfer layer. The organic memory device comprises the ion transfer layer on which metal ions can be transferred between the first electrode and the second electrode.

    Abstract translation: 提供一种有机存储器件及其制造方法，通过简单的低成本的工艺（如旋转铸造工艺）降低制造成本，并获得低工作电压并具有大的开/关比。 第一电极（10）形成在基板上。 离子转移层（20）形成在第一电极上。 第二电极（30）形成为与离子转移层接触。 有机存储器件包括其上可以在第一电极和第二电极之间转移金属离子的离子转移层。

    저항변화형 유기 메모리 소자 및 그의 제조방법
    8.
    发明公开
    저항변화형 유기 메모리 소자 및 그의 제조방법 失效
    电阻式有机存储器件及其制备方法

    公开(公告)号：KR1020070084854A

    公开(公告)日：2007-08-27

    申请号：KR1020060017154

    申请日：2006-02-22

    Applicant: 삼성전자주식회사

    Inventor： 이광희 ,  최태림 ,  주원제 ,  이상균

    IPC: H01L27/10 ,  H01L35/24

    CPC classification number: H01L51/0083 ,  B82Y10/00 ,  G11C13/0009 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/15 ,  G11C2213/77 ,  H01L27/285 ,  H01L51/0036 ,  H01L51/0042 ,  Y10T428/31504 ,  Y10T428/31678 ,  Y10T428/31786 ,  Y10T428/31855 ,  Y10T428/31935

    Abstract: A resistive organic memory device and its manufacturing method are provided to reduce switching time and to lower an operational voltage by using an organic active layer which is made of a mixture of a conductive polymer and a metallocene compound. A resistive organic memory device(100) includes an organic active layer(20) between a first electrode(10) and a second electrode(20). The organic active layer is made of a mixture of a conductive polymer and a metallocene compound. The metallocene is represented by a chemical formula of CpMCp'. Cp and Cp' are a substituted or non-substituted cyclopentadienyl or indenyl. The non-substituted Cp and Cp' are substituted by one or more hydrogen valence substituent R or OR. The two substituent R are identical to or different from each other, each of which is independently C1-20 alkyl, C3-20 cycloalkyl, C5-30 heterocycloalkyl, C2-20 alkenyl, C6-20 aryl, C5-30 heteroaryl, C7-20 arylalkyl, or C7-30 heteroarylalkyl. M is Fe, Ru, or Zr.

    Abstract translation: 提供电阻式有机存储器件及其制造方法，以通过使用由导电聚合物和茂金属化合物的混合物制成的有机活性层来减少开关时间并降低工作电压。 电阻性有机存储器件（100）包括在第一电极（10）和第二电极（20）之间的有机活性层（20）。 有机活性层由导电聚合物和金属茂化合物的混合物制成。 茂金属由CpMCp'的化学式表示。 Cp和Cp'是取代或未取代的环戊二烯基或茚基。 未取代的Cp和Cp'被一个或多个氢价取代基R或OR取代。 两个取代基R彼此相同或不同，各自独立地为C 1-20烷基，C 3-20环烷基，C 5-30杂环烷基，C 2-20烯基，C 6-20芳基，C 5-30杂芳基， 芳基烷基或C7-30杂芳基烷基。 M是Fe，Ru或Zr。

    유기층 패턴 형성방법, 그에 의해 형성된 유기층 및 그를포함하는 유기 메모리 소자
    10.
    发明公开
    유기층 패턴 형성방법, 그에 의해 형성된 유기층 및 그를포함하는 유기 메모리 소자 无效
    用于形成有机层模式的方法，由其制备的有机层模式和包含图案的有机存储器件

    公开(公告)号：KR1020080036771A

    公开(公告)日：2008-04-29

    申请号：KR1020060103429

    申请日：2006-10-24

    Applicant: 삼성전자주식회사

    Inventor： 이상균 ,  주원제 ,  이광희 ,  최태림 ,  정명섭

    IPC: H01L21/027

    CPC classification number: H01L51/0018 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016 ,  G11C2213/51 ,  G11C2213/52 ,  H01L27/285 ,  G03F7/0382 ,  G03F7/0387

    Abstract: A method for forming an organic layer pattern, an organic layer pattern through the same, and an organic memory device comprising the same are provided to implement a fine organic active layer pattern without a photoresist by using polyimide-based polymer. An organic memory device(100) comprises an organic active layer(20) sandwiched between a first electrode(10) and a second electrode(30). A polyimide-based polymer has a hetero pendant group containing heteroatom at a polyimide main chain. An organic layer pattern is formed by coating and drying the polyimide-based polymer, a photoinitiator, and a cross linkage agent to form a thin film and by exposing the thin film with a photomask having a desired pattern to form a negative pattern. The photoinitiator includes 1-phenyl-1,2-propanedione-2-(0-ethoxycarbonyl)oxime, 2,4,6-trimethyl benzoyl diphenyl phoshpine oxide, methyl phenylglyoxylate, benzil, 9,10-phenathalene quione, camphorquinone, dibenzosuberone, 2-ethlanthraquinone, 4,4'-diethylisophthalophenone, and 3,3',4,4'-tetra(tbutylperoxycarbonyl)benzophenone.

    Abstract translation: 提供了形成有机层图案的方法，通过该有机层图案的有机层图案和包含该有机层图案的有机层图案，以通过使用聚酰亚胺基聚合物来实现没有光致抗蚀剂的精细有机活性层图案。 有机存储器件（100）包括夹在第一电极（10）和第二电极（30）之间的有机活性层（20）。 聚酰亚胺类聚合物在聚酰亚胺主链上具有含杂原子的杂侧基。 通过涂布和干燥聚酰亚胺基聚合物，光引发剂和交联剂形成薄膜并通过用具有所需图案的光掩模曝光薄膜以形成负图案形成有机层图案。 光引发剂包括1-苯基-1,2-丙二酮-2-（O-乙氧基羰基）肟，2,4,6-三甲基苯甲酰基二苯基硫氧化物，苯基乙醛酸甲酯，苯偶酰，9,10-苯并噻吩酮，樟脑醌，二苯并二酮， 2-乙基蒽醌，4,4'-二乙基异酞菁和3,3'，4,4'-四（叔丁基过氧羰基）二苯甲酮。

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