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公开(公告)号：KR101878735B1
公开(公告)日：2018-07-17
申请号：KR1020110076143
申请日：2011-07-29
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: C01B31/02 , C23C16/26 , H01B1/04 , H01L21/335
Abstract: 그래핀의제조방법이제공되며, 균일한두께를가지고정공이동도가우수한그래핀을제조하는방법및 상기방법에의해얻어지는그래핀이제공된다.
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公开(公告)号：KR101231182B1
公开(公告)日：2013-02-07
申请号：KR1020070092354
申请日：2007-09-12
Applicant: 삼성전자주식회사
IPC: H01L21/304 , H01L21/687
CPC classification number: H01L21/67757 , H01L21/67313
Abstract: 본 발명은 반도체 세정 설비의 웨이퍼 브로큰 방지용 웨이퍼 가이드에 대한 것으로서, 본 발명은 복수의 웨이퍼 즉 배치 단위의 웨이퍼들 하단을 지지하는 복수의 슬롯을 형성한 형성되는 하단 지지부(21)와, 상기 하단 지지부(21)의 상부에서 양측으로 각각 구비되어 상기 웨이퍼들의 측단부를 지지하도록 형성되는 측면 지지부(22)와, 상기 하단 지지부(21)와 상기 측면 지지부(22)의 양단부가 동시에 연결되고, 배쓰의 내부에 고정되도록 하는 고정부(23)와, 로봇 척(10)이 일측의 상기 고정부(23)측으로 치우쳐 로딩되면서 정상적인 정렬 범위를 벗어나면 상기 로봇 척(10)의 홀더부(13)의 클로즈 작동에 오류가 발생되도록 하여 웨이퍼 척킹이 이루어지지 않도록 상기 양측의 고정부(23)에 각각 구비되는 스토퍼(24)로서 이루어지도록 하여 로봇 척(10)의 로딩 과정에서 정상적인 정렬 범위를 벗어나 웨이퍼 가이드(20)에 로딩되면 로봇 척(10)의 클로즈 작동에 오류가 발생되도록 하여 웨이퍼 척킹에 따른 웨이퍼 브로큰을 미연에 방지할 수 있도록 하는 것이다.
반도체 세정, 로봇 척, 웨이퍼 가이드, 웨이퍼 브로큰-
公开(公告)号：KR101788833B1
公开(公告)日：2017-10-20
申请号：KR1020100053032
申请日：2010-06-04
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
Abstract: 초소수성그라펜및 그의제조방법에관한것으로서, 상기초소수성그라펜은그 표면상에다양한돌기부가형성되어접촉각이증가되므로소수성이개선된다. 따라서새로운물질의부가없이간단한공정만으로그라펜자체에초소수성을부여하는것이가능해지므로전도성이요구되면서수분제어가필요한다양한분야에활용할수 있다.
Abstract translation: 本发明涉及一种超疏水石墨烯及其制备方法，其中疏水石墨烯在其表面上形成各种突起以增加接触角，从而改善疏水性。 因此，石墨烯本身可以通过简单的工艺赋予超疏水性而不添加新材料，因此它可以用于需要电导率控制和需要湿度控制的各个领域。
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公开(公告)号：KR1020120000338A
公开(公告)日：2012-01-02
申请号：KR1020100060659
申请日：2010-06-25
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: B82Y40/00 , B82Y30/00 , C01B32/182 , C01B32/186 , C01B32/194 , C01B2204/00 , C01B2204/02 , C01B2204/04 , H01L29/1606 , Y10T428/30
Abstract: PURPOSE: A method for controlling graphene layers is provided to obtain a single layered or dual layered graphene in a uniform structure by eliminating non-uniform structure such as grains. CONSTITUTION: A method for controlling graphene layers includes the following: A graphene is formed on one side of a first substrate. A second substrate is formed on another side of the first substrate. Light is irradiated to the graphene in order to induce Fresnel interference. Multilayered or non-uniform graphene on the graphene is eliminated through the Fresnel interference. The light is laser light. The first substrate is an organic substrate or a metal oxide substrate.
Abstract translation: 目的：提供一种控制石墨烯层的方法，通过消除诸如晶粒的不均匀结构，获得均匀结构的单层或双层石墨烯。 构成：用于控制石墨烯层的方法包括以下：在第一衬底的一侧上形成石墨烯。 第二基板形成在第一基板的另一侧上。 光照射到石墨烯上以引起菲涅尔干涉。 通过菲涅尔干涉消除石墨烯上的多层或不均匀的石墨烯。 光是激光。 第一衬底是有机衬底或金属氧化物衬底。
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公开(公告)号：KR1020080096065A
公开(公告)日：2008-10-30
申请号：KR1020070040973
申请日：2007-04-26
Applicant: 삼성전자주식회사
IPC: H01L21/304
Abstract: An apparatus and a method for cleaning a substrate are provided to improve the efficiency of cleaning the substrate by preventing the washing solution from being drained out. A wet cleaning apparatus(100) comprises a housing(110), a cleaning liquid supply member(120), a dry gas supply member(130), and a drain line. The housing provides a space therein for a process which includes a cleaning process for cleaning a substrate(W) using a cleaning solution and a dry process for drying the wafer using a dry gas. The cleaning liquid supply member supplies the cleaning solution into the housing and comprises an injecting member(122) and a cleaning liquid supply line(124). The dry gas supply member supplies the dry gas into the housing and comprises an injector and a dry gas supply line(132). The drain line drains the cleaning solution in the housing during a cleaning process and includes a quick drain line(140) and a slow drain line(150).
Abstract translation: 提供一种用于清洁基板的装置和方法，以通过防止洗涤液排出而提高清洁基板的效率。 湿式清洁装置（100）包括壳体（110），清洁液体供应构件（120），干燥气体供应构件（130）和排出管线。 外壳在其中提供了一个空间，其中包括使用清洁溶液清洁基底（W）的清洁方法和使用干燥气体干燥晶片的干燥方法。 清洗液供给部件将清洗液供给到壳体内，并具有喷射部件（122）和清洗液供给管线（124）。 干燥气体供应构件将干燥气体供应到壳体中并且包括喷射器和干燥气体供应管线（132）。 在清洁过程中，排水管线将清洁溶液排出到壳体中，并且包括快速排水管线（140）和缓慢的排水管线（150）。
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Patent Agency Ranking
公开(公告)号：KR1020130142794A
公开(公告)日：2013-12-30
申请号：KR1020120066320
申请日：2012-06-20
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: G01N21/17 , B82Y30/00 , B82Y40/00 , C01B32/182 , G01B11/24 , Y10T428/31678 , Y10T436/23 , G01N33/00 , C01B32/194 , G01N21/33
Abstract: Disclosed are a method for analyzing graphene and an analysis equipment. The method of the present invention comprises: a step of preparing a supporting part and a first graphene structure including graphene with grain and a grain boundary in at least one side of the supporting part; a step of forming a second graphene structure by oxidation-processing the first graphene structure; and a step of detecting the shape of the graphene. . [Reference numerals] (AA,CC) Start;(BB) Oxidizing step;(S110) Preparing a first graphene structure;(S131) Supplying H_2 O;(S132) Radiating UV;(S133) Removing H_2 O from the surface of the graphene structure;(S150) Detecting the shape of graphene
Abstract translation: 公开了用于分析石墨烯和分析设备的方法。 本发明的方法包括：在支撑部分的至少一侧制备支撑部分和包括具有晶粒和晶界的石墨烯的第一石墨烯结构的步骤; 通过氧化处理所述第一石墨烯结构形成第二石墨烯结构的步骤; 以及检测石墨烯的形状的步骤。 。 （参考号）（AA，CC）开始;（BB）氧化步骤;（S110）准备第一石墨烯结构;（S131）供给H_2O;（S132）辐射UV;（S133）从 石墨烯结构;（S150）检测石墨烯的形状
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公开(公告)号：KR1020110133452A
公开(公告)日：2011-12-12
申请号：KR1020110054152
申请日：2011-06-03
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: C01B31/0484 , B82Y30/00 , B82Y40/00 , C01B32/184 , C01B32/194 , C01B2204/06 , H01L29/66742 , H01L29/78684 , H01L51/0016 , H01M4/1393 , H01M4/8817 , H01M4/8867 , H01M8/0202 , H01M10/052 , Y02P70/56 , Y10T428/24479
Abstract: PURPOSE: A method for manufacturing a graphene nano-ribbon and the graphene nano-ribbon manufactured by the same are provided to cost effectively manufacture the graphene nano-ribbon without a high vacuum machine or an expensive machine. CONSTITUTION: A method for manufacturing a graphene nano-ribbon includes the following: A sheet-shaped graphene is formed on at least one side of a substrate. A plasma mask with nano-patterns is formed on the graphene. The nano-patterns are formed on the graphene by implementing a plasma treating process with respect to the stacked body with the plasma mask. The plasma mask forming process includes an amorphous carbon stacking process and a nano-pattern forming process with respect to amorphous carbon. After the nano-patterns are formed on the graphene, the plasma mask is eliminated.
Abstract translation: 目的：提供一种制造石墨烯纳米带的方法和由其制造的石墨烯纳米带，以便在没有高真空机或昂贵的机器的情况下成本有效地制造石墨烯纳米带。 构成：用于制造石墨烯纳米带的方法包括以下：片状石墨烯形成在基板的至少一侧上。 在石墨烯上形成具有纳米图案的等离子体掩模。 通过使用等离子体掩模实现相对于层叠体的等离子体处理工艺，在石墨烯上形成纳米图案。 等离子体掩模形成工艺包括无定形碳堆叠工艺和相对于无定形碳的纳米图案形成工艺。 在石墨烯上形成纳米图案之后，等离子体掩模被消除。
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公开(公告)号：KR1020090027267A
公开(公告)日：2009-03-17
申请号：KR1020070092354
申请日：2007-09-12
Applicant: 삼성전자주식회사
IPC: H01L21/304 , H01L21/687
CPC classification number: H01L21/67757 , H01L21/67313
Abstract: A wafer guide for preventing wafer broken of semiconductor cleaning equipment is provided to prevent the damage of wafer by generating the error in the close operation of the robot chuck if the loading location of the robot chuck deviates from over the specified range. The lower supporting part(21) supports the wafer bottom. The lateral support(22) is formed at both sides of the top of the lower supporting part. The lateral supporting part supports the lateral edge of wafers. The fixing unit(23) is connected to the lower supporting part and lateral support. Moreover, the fixing unit is fixed inside the bath. The stopper(24) is equipped in the fixing unit of the both sides. If the robot chuck(10) is out of the normal range, the stopper stops the chucking of wafer by generating the error in the close operation of robot.
Abstract translation: 提供了用于防止半导体清洁设备的晶片断裂的晶片引导件，用于通过在机器人卡盘的装载位置偏离超过指定范围的情况下通过在机器人卡盘的闭合操作中产生误差来防止晶片的损坏。 下支撑部分（21）支撑晶片底部。 侧支撑件（22）形成在下支撑部分的顶部的两侧。 横向支撑部分支撑晶圆的侧边缘。 固定单元（23）连接到下支撑部分和横向支撑件。 此外，固定单元固定在浴槽内。 在两侧的固定单元中配备有止动件（24）。 如果机器人卡盘（10）超出正常范围，则通过在机器人的关闭操作中产生错误，止动器停止夹紧晶片。
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公开(公告)号：KR101920721B1
公开(公告)日：2018-11-22
申请号：KR1020110054152
申请日：2011-06-03
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: C01B32/184 , B82Y30/00 , B82Y40/00 , C01B32/194 , C01B2204/06 , H01L29/66742 , H01L29/78684 , H01L51/0016 , H01M4/1393 , H01M4/8817 , H01M4/8867 , H01M8/0202 , H01M10/052 , Y02P70/56 , Y10T428/24479
Abstract: 그라펜나노리본의제조방법및 상기제조방법에의해얻어진그라펜나노리본이형성되며, 상기제조방법은완화된조건에서경제적인방법으로형성할수 있다. 상기그라펜나노리본은투명전극이나메모리, 트랜지스터, 센서등의다양한전기소자에적용될수 있다.
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