公开(公告)号：WO2022158930A2

公开(公告)日：2022-07-28

申请号：PCT/KR2022/001226

申请日：2022-01-24

Applicant: 삼성전자주식회사

Inventor： 박정민 ,  김연우 ,  박대희 ,  손동일 ,  한장훈

IPC: H01Q1/24 ,  H01Q1/38 ,  G06F1/1694 ,  G06F1/1698

Abstract: 전자 장치는, 디스플레이 글래스가 형성되는 전면을 포함하는 하우징, 디스플레이 패널, 하우징 내부에 마련되어 통신 신호를 송수신하며, 디스플레이 글래스와 디스플레이 패널 사이에 배치되는 디스플레이 안테나 레이어, 디스플레이 안테나 레이어와 전기적으로 연결되는 무선 통신 모듈, 외부 물체의 접근에 의한 디스플레이 안테나 레이어의 정전 용량의 변화를 감지하는 그립 센서, 및 그립 센서로부터 신호를 수신받고, 상기 그립 센서로부터 수신받은 신호를 기초로 디스플레이 안테나 레이어의 송신 에너지를 조절하는 프로세서를 포함한다.

公开(公告)号：KR1020080013192A

公开(公告)日：2008-02-13

申请号：KR1020060074364

申请日：2006-08-07

Applicant: 삼성전자주식회사

Inventor： 이현오 ,  한장훈

IPC: H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32633

Abstract: A dry etching apparatus is provided to uniformly maintain an etching speed in a chamber and to improve etch uniformity by controlling an exhausting speed of reactive gas used for a dry etching. A chamber(110) defines a plasma generation space. A substrate receiving plate(130) is arranged on a lower surface of the chamber to support a substrate(140). An exhaust outlet(170) is formed on a lower corner of the chamber. A duplex baffle is disposed between an inner surface of the chamber and a side of the substrate receiving plate. The double-layer baffle has first plural baffles(210a,210b) and second plural baffles(220a,220b). The first baffles are arranged in parallel to have a first interval to each other. The second baffles are arranged on upper portions of the first baffles. The second baffles are arranged in parallel to have a second interval to each other. At least one of the first baffles has a first height difference with respect to the exhaust outlet to block a vertical upper portion of the exhaust outlet.

Abstract translation: 提供干蚀刻装置以均匀地保持腔室中的蚀刻速度并且通过控制用于干蚀刻的反应气体的排出速度来提高蚀刻均匀性。 腔室（110）限定等离子体产生空间。 衬底接收板（130）布置在腔室的下表面上以支撑衬底（140）。 排气出口（170）形成在室的下角。 双面挡板设置在室的内表面和基板接收板的一侧之间。 双层挡板具有第一多个挡板（210a，210b）和第二多个挡板（220a，220b）。 第一挡板平行布置以具有彼此的第一间隔。 第二挡板布置在第一挡板的上部。 第二挡板平行布置以具有彼此的第二间隔。 第一挡板中的至少一个相对于排气出口具有第一高度差，以阻止排气出口的垂直上部。

公开(公告)号：KR1020080026340A

公开(公告)日：2008-03-25

申请号：KR1020060091245

申请日：2006-09-20

Applicant: 삼성전자주식회사

Inventor： 이호종 ,  한장훈

IPC: H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32633

Abstract: A plasma processing apparatus having a baffle plate is provided to generate uniformly plasma by implementing the baffle plate for controlling the flow of gas through plural slits. A plasma processing apparatus includes a reaction chamber(100), upper and lower electrodes(200,300), and a baffle plate(400). The upper electrode is formed at an upper portion in the reaction chamber. The lower electrode, which is formed opposite to the upper electrode, includes an electrostatic chuck and a substrate escalator. The baffle plate includes an open part penetrated from a top to a bottom at a center portion thereof and plural slits between inner and outer peripheries. The baffle plate is formed along an outer periphery of the lower electrode.

Abstract translation: 提供具有挡板的等离子体处理装置，通过实施用于控制通过多个狭缝的气体流动的挡板来产生均匀的等离子体。 等离子体处理装置包括反应室（100），上下电极（200,300）和挡板（400）。 上电极形成在反应室的上部。 与上部电极相对形成的下部电极包括静电卡盘和基板自动扶梯。 挡板包括在其中心部分从顶部到底部穿透的开放部分，以及在内周和外周之间的多个狭缝。 挡板是沿下电极的外周形成的。

公开(公告)号：KR1020080006740A

公开(公告)日：2008-01-17

申请号：KR1020060065849

申请日：2006-07-13

Applicant: 삼성전자주식회사

Inventor： 고석배 ,  한장훈 ,  손진석

IPC: C23C14/35 ,  C23C14/34

CPC classification number: H01J37/3452 ,  H01J37/3408 ,  H01J37/3455

Abstract: A sputtering device is provided to manufacture a high-quality thin film with uniform thickness and to increase a life span thereof, by forming a magnetic field at a whole surface of a target material uniformly by forming a magnetic unit whose magnetic flux density is different at a longitudinal direction. A sputtering device comprises a processing chamber, a support, a target unit, and a magnetic unit. The processing chamber is air-tightened. The support supports a controlled body. The target unit is corresponded to the support. The magnetic unit is positioned at a rear surface of the target unit. The magnetic force of a longitudinal center portion of the magnetic unit is stronger than the magnetic force of both end portions for the magnetic unit. The magnetic unit includes a first magnetic unit(A) and a second magnetic unit(B). Plural first magnetic bodies(210,211,212,213) are separated and positioned in parallel at the first magnetic unit. A second magnetic body(220a,220b) whose magnetic force is weaker than the magnetic force of the first magnetic body is positioned at both ends of the first magnetic unit separately.

Abstract translation: 提供溅射装置，通过形成磁通密度不同的磁性单元，通过在目标材料的整个表面上均匀形成磁场，制造均匀厚度的高品质薄膜并增加其使用寿命 纵向。 溅射装置包括处理室，支撑件，目标单元和磁性单元。 处理室被气密。 支撑支撑受控体。 目标单位对应于支持。 磁单元位于目标单元的后表面。 磁性单元的纵向中心部分的磁力比磁性单元的两个端部的磁力强。 磁性单元包括第一磁性单元（A）和第二磁性单元（B）。 多个第一磁体（210,211,212,213）在第一磁性单元处被分离并且平行定位。 其磁力弱于第一磁性体的磁力的第二磁性体（220a，220b）分别位于第一磁性单元的两端。

公开(公告)号：KR1020010004497A

公开(公告)日：2001-01-15

申请号：KR1019990025182

申请日：1999-06-29

Applicant: 삼성전자주식회사

Inventor： 한장훈 ,  하태영

IPC: H04B1/40

CPC classification number: H03F3/16 ,  H03F1/0211 ,  H03F3/21 ,  H04B1/40

Abstract: PURPOSE: An apparatus for controlling a power amplifier in a portable wireless terminal is provided to use field effect transistors(FETs) to control the power amplifier of the wireless terminal, so as to decrease the number of control elements and not to generate ripples to reduce power consumption. CONSTITUTION: A power amplifier amplifies signals inputted by a predetermined driving signal at regular amplification ratios, and outputs the amplified signals. A signal converter(100) turns on/off field effect transistors(FETs)(T1,T2) by a predetermined control signal, to output the driving signal for driving the power amplifier. A controller outputs the control signal. The FETs(T1,T2) are outputted from the controller, and are turned on/off by a first control signal and a second control signal. The first control signal is in accordance with a coding rate for controlling the power amplifier. The second control signal controls an amplification ratio of the power amplifier. The FETs(T1,T2) supplies or intercepts a control voltage of the power amplifier.

Abstract translation: 目的：提供一种用于控制便携式无线终端中的功率放大器的装置，以使用场效应晶体管（FET）来控制无线终端的功率放大器，从而减少控制元件的数量并且不产生波纹以减少 能量消耗。 构成：功率放大器以规则的放大率放大由预定的驱动信号输入的信号，并输出放大的信号。 信号转换器（100）通过预定的控制信号接通/关闭场效应晶体管（FET）（T1），以输出用于驱动功率放大器的驱动信号。 控制器输出控制信号。 FET（T1，T2）从控制器输出，并通过第一控制信号和第二控制信号导通/截止。 第一控制信号根据用于控制功率放大器的编码率。 第二控制信号控制功率放大器的放大率。 FET（T1，T2）提供或截取功率放大器的控制电压。

公开(公告)号：KR1020070115178A

公开(公告)日：2007-12-05

申请号：KR1020060049212

申请日：2006-06-01

Applicant: 삼성전자주식회사

Inventor： 한장훈 ,  김형돈 ,  서영갑 ,  김병동 ,  양희영 ,  이호종

IPC: H01L21/3065

CPC classification number: H01J37/32807 ,  H01L21/6719

Abstract: A display substrate processing apparatus is provided to realize a plasma space symmetric to all directions by positioning additionally a second switch for opening and closing a connection path inside of a main chamber except for a first switch. A display substrate is loaded to a transfer chamber(200). A main chamber(300) performs a plasma process to the display substrate. A connection part(400) offers a connection path for transferring the display substrate by connecting the main chamber with the transfer chamber. A first switch(600) opens and closes the connection path of the main chamber from the outside. A second switch(500) opens and closes the connection path of the main chamber from the inside.

Abstract translation: 提供了一种显示基板处理装置，通过另外设置用于打开和关闭除第一开关之外的主室内的连接路径的第二开关来实现与所有方向对称的等离子体空间。 将显示基板装载到传送室（200）。 主室（300）对显示基板进行等离子体处理。 连接部件（400）通过将主室与传送室连接来提供用于传送显示基板的连接路径。 第一开关（600）从外部打开和关闭主室的连接路径。 第二开关（500）从内部打开和关闭主室的连接路径。

公开(公告)号：KR1020070114928A

公开(公告)日：2007-12-05

申请号：KR1020060048588

申请日：2006-05-30

Applicant: 삼성전자주식회사

Inventor： 한장훈 ,  손진석 ,  고석배

IPC: H01L21/205 ,  H01L21/3065

CPC classification number: G02F1/1303 ,  H01L21/67017

Abstract: An apparatus for processing a display substrate is provided to adjust and control distribution of reaction gas by using each of flow rate controllers. An upper electrode is arranged in an inside of a process chamber. The upper electrode includes a central injection part(210) formed on a lower surface thereof and an external injection part(220) for covering an outside of the central injection part. A lower electrode is formed opposite to the upper electrode and is arranged in the inside of the process chamber. A target substrate is loaded on an upper surface of the lower electrode. A first flow rate controller(400) supplies reaction gas to the inside of the process chamber and is connected to the central injection part. A second flow rate controller(500) is connected to the external injection part.

Abstract translation: 提供一种用于处理显示基板的装置，以通过使用每个流量控制器来调节和控制反应气体的分配。 上电极布置在处理室的内部。 上电极包括形成在其下表面上的中心注射部分（210）和用于覆盖中心注射部分外部的外部注射部分（220）。 下电极与上电极相对地形成，并且布置在处理室的内部。 靶基板装载在下电极的上表面。 第一流量控制器（400）将反应气体供应到处理室的内部并连接到中心喷射部分。 第二流量控制器（500）连接到外部喷射部分。