公开(公告)号：KR1020150093471A

公开(公告)日：2015-08-18

申请号：KR1020140014294

申请日：2014-02-07

Applicant: 삼성전자주식회사

Inventor： 김경은 ,  정훈 ,  김재현 ,  이동원 ,  한정구 ,  황지혜

IPC: H01L27/108 ,  H01L21/28 ,  H01L21/8242

CPC classification number: H01L21/76897 ,  G11C5/063 ,  H01L21/768 ,  H01L21/76895 ,  H01L23/528 ,  H01L27/1052 ,  H01L27/10814 ,  H01L27/10885

Abstract: Provided is a semiconductor device. The semiconductor device includes a semiconductor substrate; a bit line structure which includes a first upper surface which is located on the semiconductor substrate and is closed to a first side and a second upper surface which is closed to the second side facing the first side; and a storage contact plug which is located on the first side of the bit line structure and covers the first upper side of the bit line structure. The level of the first upper surface of the bit line structure becomes lower as getting close to the first side of the bit line structure.

Abstract translation: 提供一种半导体器件。 半导体器件包括半导体衬底; 位线结构，其包括位于所述半导体基板上并且与第一侧相对的第一上表面和与所述第一侧相对的所述第二侧闭合的第二上表面; 以及位于位线结构的第一侧并覆盖位线结构的第一上侧的存储接触插塞。 位线结构的第一上表面的电平随着接近位线结构的第一侧而变低。