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公开(公告)号：KR100643484B1
公开(公告)日：2006-11-10
申请号：KR1020000035236
申请日：2000-06-26
Applicant: 삼성전자주식회사
Inventor： 한준호
IPC: H01L21/28
Abstract: 본 발명은 반도체소자의 제조방법을 개시한다. 이에 의하면, 건식식각장치에서 CHF
3 가스를 주 공정가스로 사용하고 O
2 가스를 첨가가스로 사용하여 BPSG막의 일부분에 깊이 차이가 심한 딥 콘택홀을 형성한다. 여기서, RF 파워를 800∼1200W의 범위에서, 압력을 50∼150mTorr의 범위에서, 자장을 40∼80 Gauss의 범위에서, CHF
3 가스를 80∼150SCCM의 범위에서, O
2 가스를 5∼15 SCCM의 범위에서 결정한다.
따라서 본 발명은 마이크로 로딩효과를 최소화하고 딥 콘택홀의 양호한 식각프로파일을 확보할 수 있고, 딥 콘택홀 저면 상의 폴리머를 상당히 많이 제거하여 식각정지현상을 최소화할 수 있다.Abstract translation: 本发明公开了一种制造半导体器件的方法。 据此，在干蚀刻装置中，CHF
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公开(公告)号：KR1020040017973A
公开(公告)日：2004-03-02
申请号：KR1020020050233
申请日：2002-08-23
Applicant: 삼성전자주식회사
Inventor： 한준호
IPC: G06F1/16
Abstract: PURPOSE: A docking station device having an IDE(Integrated Device Electronics) disk drive capable of hot-swapping is provided to realize hot-swap of a storage embedded with an IDE disk, to hold an internal configuration to use the storage as an internal/external type, and to save a manufacturing cost. CONSTITUTION: The device comprises a power supply, a main body connector(3), a bay(27), and a controller. The main body connector is connected to a docking part installed to a computer main body. The bay forms a receiving space for the data storage, and includes a high speed serial data port connecting to the data storage by including a power pin receiving the power from the power supply. The controller controls read/write of the data storage through the high speed serial data port by encoding/decoding the data according to an I/O(Input/Output) signal provided from the main body connector.
Abstract translation: 目的：提供具有能够进行热插拔的IDE（集成电子设备电子））磁盘驱动器的对接站设备，以实现嵌入IDE盘的存储器的热插拔，以保持内部配置以将存储器用作内部/ 外部类型，并节省制造成本。 构成：设备包括电源，主体连接器（3），托架（27）和控制器。 主体连接器连接到安装到计算机主体上的对接部分。 托架形成用于数据存储的接收空间，并且包括通过包括从电源接收电力的电源引脚连接到数据存储器的高速串行数据端口。 控制器通过根据从主体连接器提供的I / O（输入/输出）信号对数据进行编码/解码，通过高速串行数据端口控制数据存储器的读/写。
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公开(公告)号：KR1020020000430A
公开(公告)日：2002-01-05
申请号：KR1020000035234
申请日：2000-06-26
Applicant: 삼성전자주식회사
Inventor： 한준호
IPC: H01L21/3065
Abstract: PURPOSE: A method for manufacturing a semiconductor device is provided to minimize process defects like a cone phenomenon or bridge phenomenon caused by particles of a polysilicon layer material, by consecutively dry-etching an anti-reflective layer, a silicide layer and a polysilicon layer in a dry-etching apparatus to form a pattern of a gate electrode. CONSTITUTION: A gate oxide layer is formed on a semiconductor substrate. A polysilicon layer and a silicide layer are sequentially formed on the gate oxide layer. An anti-reflective layer(ARL) is formed on the silicide layer. A photoresist layer pattern is formed on the ARL. The ARL, the silicide layer and the polysilicon layer are consecutively dry-etched in one etching apparatus to form a gate electrode pattern by using the photoresist layer pattern as a mask.
Abstract translation: 目的：提供一种用于制造半导体器件的方法，以通过连续干蚀刻抗反射层，硅化物层和多晶硅层来最小化诸如由多晶硅层材料的颗粒引起的锥形现象或桥接现象的工艺缺陷 用于形成栅电极的图案的干蚀刻装置。 构成：在半导体衬底上形成栅氧化层。 在栅极氧化物层上依次形成多晶硅层和硅化物层。 在硅化物层上形成抗反射层（ARL）。 在ARL上形成光致抗蚀剂图案。 在一个蚀刻装置中连续干法蚀刻ARL，硅化物层和多晶硅层，通过使用光致抗蚀剂层图案作为掩模形成栅电极图案。
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公开(公告)号：KR1020010044889A
公开(公告)日：2001-06-05
申请号：KR1019990047939
申请日：1999-11-01
Applicant: 삼성전자주식회사
Inventor： 한준호
IPC: H01L21/306
Abstract: PURPOSE: An etching method for manufacturing a semiconductor device is provided to improve a profile of a pattern, by efficiently eliminating the polymer generated in a process for etching an oxynitride layer. CONSTITUTION: An oxide layer(12), a poly layer and an oxynitride layer(16) are sequentially formed on a semiconductor substrate(10) to form a thin film structure. The thin film structure is etched by an in-situ method. After the oxynitride layer is etched, polymer is eliminated by using mixture gas of helium and oxygen before the poly layer is etched.
Abstract translation: 目的：提供一种用于制造半导体器件的蚀刻方法，以通过有效地消除在蚀刻氧氮化物层的工艺中产生的聚合物来改善图案的轮廓。 构成：在半导体基板（10）上依次形成氧化物层（12），多晶硅层和氧氮化物层（16），形成薄膜结构。 通过原位法蚀刻薄膜结构。 在蚀刻氮氧化物层之后，在蚀刻多晶硅层之前，通过使用氦和氧的混合气体来消除聚合物。
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Patent Agency Ranking
公开(公告)号：KR1019970052397A
公开(公告)日：1997-07-29
申请号：KR1019950059335
申请日：1995-12-27
Applicant: 삼성전자주식회사
IPC: H01L21/28
Abstract: 본 발명은 건식 식각 공정에 의한 콘택 홀의 형성과 동시에 콘택 홀 부위에 노출된 반도체 기판상에 실리콘 처리를 하므로써, 반도체 장치의 제조 공정을 단순화한 반도체 장치의 제조 방법에 관한 것이다. 특히, 반응가스로서 O
2 /CF
4 가스를 사용하여 콘택홀을 형성하기 위한 식각 공정과 콘택 홀 부위의 반도체 기판상에 실리콘 처리하는 공정을 하나의 공정에서 실시하므로써, 공정 단순화 및 반도체 장치의 수율 및 품질을 향상시킬 수 있게 된다.-
公开(公告)号：KR100541728B1
公开(公告)日：2006-01-10
申请号：KR1020030045442
申请日：2003-07-04
Applicant: 삼성전자주식회사
Inventor： 한준호
IPC: G06F1/26
CPC classification number: G06F1/266
Abstract: 본 발명은 컴퓨터시스템에 관한 것으로서 보다 상세하게는 허브기능을 하는 어댑터를 갖는 컴퓨터시스템에 관한 것이다. 본 발명은 어댑터와 컴퓨터본체와 상기 어댑터와 상기 컴퓨터본체를 연결하는 커넥터를 갖는 컴퓨터시스템에 있어서, 상기 어댑터는 소정의 입력전원을 입력받는 입력전원접속부와, 상기 입력전원을 소정의 출력전원으로 변환하는 전원변환부와, 상기 출력전원을 메인시스템으로 출력하는 출력전원접속부와, 외부기기의 커넥터에 접속되는 복수의 포트와, 상기 전원변환부로부터 상기 출력전원을 공급받고 상기 포트에 입출력되는 신호를 제어하는 컨트롤러를 갖는 것을 특징으로 하는 컴퓨터시스템이다. 이에 의해 컴퓨터시스템의 포트의 수를 확장할 수 있고, 배터리의 방전 없이 외부기기에 파워를 공급하는 데이터 통신이 가능하며, 별도의 전원공급 케이블 등을 사용하지 않는 허브를 제공하는 컴퓨터시스템을 구현할 수 있다.
어댑터, 허브, 컴퓨터시스템-
公开(公告)号：KR100465803B1
公开(公告)日：2005-01-13
申请号：KR1020020050233
申请日：2002-08-23
Applicant: 삼성전자주식회사
Inventor： 한준호
IPC: G06F1/16
Abstract: PURPOSE: A docking station device having an IDE(Integrated Device Electronics) disk drive capable of hot-swapping is provided to realize hot-swap of a storage embedded with an IDE disk, to hold an internal configuration to use the storage as an internal/external type, and to save a manufacturing cost. CONSTITUTION: The device comprises a power supply, a main body connector(3), a bay(27), and a controller. The main body connector is connected to a docking part installed to a computer main body. The bay forms a receiving space for the data storage, and includes a high speed serial data port connecting to the data storage by including a power pin receiving the power from the power supply. The controller controls read/write of the data storage through the high speed serial data port by encoding/decoding the data according to an I/O(Input/Output) signal provided from the main body connector.
Abstract translation: 目的：提供具有能够热交换的IDE（Integrated Device Electronics）磁盘驱动器的扩展坞装置，以实现嵌入IDE盘的存储器的热插拔，以保持内部配置以将存储器用作内部/ 外部类型，并节省制造成本。 构成：该设备包括电源，主体连接器（3），托架（27）和控制器。 主体连接器连接到安装到计算机主体的对接部分。 机架形成数据存储的接收空间，并包括一个高速串行数据端口，通过包含一个接收电源电源的电源引脚连接到数据存储器。 控制器通过根据从主体连接器提供的I / O（输入/输出）信号对数据编码/解码来控制通过高速串行数据端口对数据存储器的读取/写入。
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公开(公告)号：KR1020050003913A
公开(公告)日：2005-01-12
申请号：KR1020030045442
申请日：2003-07-04
Applicant: 삼성전자주식회사
Inventor： 한준호
IPC: G06F1/26
CPC classification number: G06F1/266
Abstract: PURPOSE: A computer system with an adapter functioning as a hub is provided to offer the hub performing data communication to supply power to an external device without discharging a battery and using no power supply cable. CONSTITUTION: An input power connector(20) receives input power. A power transformer(30) transforms the input power into a specified output power. An output power connector(40) outputs the output power to a computer main body(60). Multiple ports(51) connect to the connector of the external device. A controller(52) receives the output power from the power transformer and controls a signal inputted/output from the ports. A power line supplies the power to the computer main body from the output power connector. A data line communicates data between the controller and the computer main body.
Abstract translation: 目的：提供具有适配器作为集线器的计算机系统，以提供集线器执行数据通信以向外部设备供电，而不会释放电池并且不使用电源电缆。 构成：输入电源连接器（20）接收输入电源。 电力变压器（30）将输入功率转换成指定的输出功率。 输出电源连接器（40）将输出电力输出到计算机主体（60）。 多个端口（51）连接到外部设备的连接器。 控制器（52）从电力变压器接收输出功率并控制从端口输入/输出的信号。 电源线从输出电源连接器向计算机主体供电。 数据线在控制器和计算机主体之间传送数据。
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公开(公告)号：KR1020000009481A
公开(公告)日：2000-02-15
申请号：KR1019980029932
申请日：1998-07-24
Applicant: 삼성전자주식회사
Inventor： 한준호
IPC: H01L21/3065
Abstract: PURPOSE: The method is to accomplish etch process and ashing process simultaneously to the wafer in a same reaction chamber, and to use reaction chamber which can be adjusted in a condition different from each other. CONSTITUTION: The method comprises (a) a step of preparing wafer on which oxidation film is formed and then poly-silicon film is formed on the oxidation film, (b) a step of forming photosensitive film over the poly-silicon film, (c) a step of etching the poly-silicon film through the photosensitive film, (d) a step of ashing the photosensitive film, and (e) a step of stripping residues from the etched poly-silicon film and the photosensitive film wherein the steps (c) and (d) are respectively accomplished under different processing condition in a same reaction chamber. In this method, the processing condition in each process comprises a pressure in the interior of the reaction chamber, flow rate of process gas supplied to the reaction chamber and a RF power supplied to the reaction chamber. According to these processing conditions, the reaction chamber is connected to vacuum pump, gas supplying part and power supply.
Abstract translation: 目的：该方法是在相同的反应室中同时对晶片进行蚀刻处理和灰化处理，并使用能够在彼此不同的条件下调节的反应室。 方案：该方法包括：（a）制备在其上形成氧化膜的晶片，然后在氧化膜上形成多晶硅膜的步骤，（b）在多晶硅膜上形成感光膜的步骤，（c ）通过所述感光膜蚀刻所述多晶硅膜的步骤，（d）灰化所述感光膜的步骤，以及（e）从蚀刻的多晶硅膜和所述感光膜剥离残留物的步骤，其中所述步骤 c）和（d）分别在不同的加工条件下在相同的反应室中完成。 在该方法中，每个处理中的处理条件包括反应室内部的压力，供给到反应室的处理气体的流量和供给到反应室的RF功率。 根据这些处理条件，反应室连接到真空泵，供气部分和电源。
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