公开(公告)号：KR1020140017399A

公开(公告)日：2014-02-11

申请号：KR1020120084578

申请日：2012-08-01

Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

Inventor： 안종렬 ,  서정탁 ,  박지훈 ,  전철호

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/06 ,  B82Y30/00 ,  B82Y99/00 ,  C23C18/08 ,  H01L21/02104 ,  H01L21/02378 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/02612 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02664 ,  H01L29/1606 ,  H01L29/778

Abstract: The present invention relates to a graphene semiconductor and an electronic device comprising the same. According to one embodiment of the present invention, the graphene semiconductor includes graphene; and a metal atomic layer formed on the graphene. The metal atomic layer includes metal for transferring charges to the graphene. The metal atomic layer includes alkali metal.

Abstract translation: 本发明涉及一种石墨烯半导体及其制造方法。 根据本发明的一个实施方案，石墨烯半导体包括石墨烯; 以及形成在石墨烯上的金属原子层。 金属原子层包括用于将电荷转移到石墨烯的金属。 金属原子层包括碱金属。

公开(公告)号：KR1020140090716A

公开(公告)日：2014-07-18

申请号：KR1020120151337

申请日：2012-12-21

Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

Inventor： 안종렬 ,  신하철 ,  송인경

IPC: C01B31/02 ,  C23C16/06 ,  B01J6/00

CPC classification number: H01L29/66742 ,  C01B32/184 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02491 ,  H01L21/02494 ,  H01L21/02527 ,  H01L21/02612 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/78684 ,  B01J6/00 ,  C01B2204/02 ,  C01B2204/22 ,  C23C16/06

Abstract: Provided are a method of manufacturing a graphene structure, the graphene structure and a graphene device including the same. The method of manufacturing a graphene structure includes a step of depositing a metal layer on a silicon carbide substrate; and a step of forming a composite layer, including the metal, and a graphene layer on the silicon carbide substrate by heat treating the metal layer-deposited silicon carbide at a first temperature.

Abstract translation: 提供了一种制造石墨烯结构的方法，石墨烯结构和包括该石墨烯结构的石墨烯装置。 制造石墨烯结构的方法包括在碳化硅衬底上沉积金属层的步骤; 以及通过在第一温度下对金属层沉积的碳化硅进行热处理，在碳化硅衬底上形成包括金属的复合层和石墨烯层的步骤。

公开(公告)号：KR1020120111400A

公开(公告)日：2012-10-10

申请号：KR1020110029848

申请日：2011-03-31

Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

Inventor： 신현진 ,  최재영 ,  박지훈 ,  안종렬

IPC: C01B31/02 ,  G03F7/00

CPC classification number: H01L21/02587 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/188 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/02612 ,  H01L21/02658 ,  H01L29/0657 ,  H01L29/1606

Abstract: PURPOSE: A three-dimensional graphene structure, a manufacturing method of the same, and a transferring method of the same are provided to stably implement a transferring operation and to improve the performance of graphene-based elements. CONSTITUTION: A three-dimensional graphene structure includes periodically repeated three-dimensional shapes. The three-dimensional shapes are hollow hemispherical, cylindrical, or bowl-shaped concave parts or convex parts. The sizes of the three-dimensional shapes are in a range between about 0.1 and 100 um, and the intervals of the three-dimensional shapes are in a range between about 0.1 and 100um. The heights or the depths of the three-dimensional shapes are in a range between about 10nm and about 10um.

Abstract translation: 目的：提供三维石墨烯结构及其制造方法及其转印方法，以稳定地实施转印操作并提高石墨烯元件的性能。 构成：三维石墨烯结构包括周期性重复的三维形状。 三维形状是中空半球形，圆柱形或碗形凹部或凸部。 三维形状的尺寸在约0.1和100μm之间的范围内，并且三维形状的间隔在约0.1和100um之间的范围内。 三维形状的高度或深度在约10nm至约10μm之间的范围内。

公开(公告)号：KR101984697B1

公开(公告)日：2019-05-31

申请号：KR1020120151337

申请日：2012-12-21

Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

Inventor： 안종렬 ,  신하철 ,  송인경

IPC: C01B31/02 ,  C23C16/06 ,  B01J6/00

公开(公告)号：KR101878734B1

公开(公告)日：2018-07-16

申请号：KR1020110061796

申请日：2011-06-24

Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

Inventor： 신현진 ,  최재영 ,  안종렬 ,  서정탁

IPC: C01B31/02 ,  B32B18/00 ,  H01B1/04 ,  H01L21/331

CPC classification number: B32B9/04 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/02378 ,  H01L21/02488 ,  H01L21/02527 ,  H01L21/02656 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/778 ,  H01L31/022466 ,  H01L31/1884 ,  H01M4/96 ,  H01M8/0234 ,  H01M8/086 ,  H01M8/1007 ,  H01M8/1011 ,  H01M8/103 ,  H01M8/1041 ,  Y02E10/50 ,  Y02E60/523 ,  Y02P70/56

Abstract: 그래핀의직성장방법이제공되며, 상기직성장방법에따르면기판상에서그래핀을직접성장시킨후 그결정성을향상시킴으로써별도의전사공정이요구되지않아그래핀의손상을최소화시키는것이가능해진다.

公开(公告)号：KR1020110138195A

公开(公告)日：2011-12-26

申请号：KR1020110059746

申请日：2011-06-20

Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

Inventor： 신현진 ,  최재영 ,  안종렬 ,  전철호

IPC: C01B31/02 ,  B82B1/00 ,  H01L21/328 ,  H01L51/50

CPC classification number: H01L29/778 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/28255 ,  H01L29/1606 ,  H01L29/4908 ,  H01L29/7317 ,  H01L29/7613 ,  H01L29/78684 ,  Y10T428/30 ,  C01B32/182 ,  C01B2204/02

Abstract: PURPOSE: An alkali metal containing monolayer graphene and an electronic device including the same are provided to maintain the inherent characteristic of the graphene by forming high band gap in the graphene through the localization of charges based on non-chemical bonds. CONSTITUTION: Alkali metals are prepared by being selected from lithium, sodium, potassium, rubidium, cesium, and francium. The alkali metals are placed on at least one surface of a monolayer graphene. The alkali metals are in second dimensional thin film structure. About 30-99% of the entire surface area of the monolayer graphene is occupied by the alkali metals. The band gap of the monolayer graphene is more than or equal to 0.4eV. The area of the monolayer graphene is more than or equal to 1cm^2.

Abstract translation: 目的：提供含有碱金属的单层石墨烯及其电子装置，以通过基于非化学键的电荷定位在石墨烯中形成高带隙来维持石墨烯的固有特性。 构成：碱金属是通过选自锂，钠，钾，铷，铯和are制成的。 碱金属被放置在单层石墨烯的至少一个表面上。 碱金属处于二维薄膜结构中。 单层石墨烯的整个表面积的约30-99％被碱金属占据。 单层石墨烯的带隙大于或等于0.4eV。 单层石墨烯的面积大于或等于1cm ^ 2。

公开(公告)号：KR1020110074357A

公开(公告)日：2011-06-30

申请号：KR1020090131294

申请日：2009-12-24

Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

Inventor： 신현진 ,  최재영 ,  전철호 ,  안종렬

IPC: H01L21/84

Abstract: PURPOSE: A method of forming an oxide film is provided to remove an SiOC film between an SiC substrate and an SiO2 oxide film by projecting beam on an SiO2 oxide film after forming the SiO2 oxide. CONSTITUTION: In a method of forming an oxide film, an SiC substrate(110) is prepared. An SiO2 oxide film(120) is formed on the SiC substrate. The SiO2 oxide film is formed through thermal oxidation method using water and oxygen. The SiOC film(130) is formed between the SiC substrate and the SiO2 oxide film. An electron beam is researched on the SiO2 oxide film.

Abstract translation: 目的：提供形成氧化膜的方法，以在形成SiO 2氧化物之后，通过在SiO 2氧化物膜上投射光束来除去SiC衬底和SiO 2氧化物膜之间的SiOC膜。 构成：在形成氧化膜的方法中，制备SiC衬底（110）。 在SiC衬底上形成SiO 2氧化物膜（120）。 通过使用水和氧的热氧化法形成SiO 2氧化物膜。 在SiC衬底和SiO 2氧化物膜之间形成SiOC膜（130）。 研究了SiO2氧化膜的电子束。

公开(公告)号：KR101956277B1

公开(公告)日：2019-03-08

申请号：KR1020180034648

申请日：2018-03-26

Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

Inventor： 신현진 ,  최재영 ,  박지훈 ,  안종렬

IPC: C01B32/188 ,  H01L21/02 ,  B82Y30/00 ,  B82Y40/00

公开(公告)号：KR101919423B1

公开(公告)日：2018-11-19

申请号：KR1020120084578

申请日：2012-08-01

Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

Inventor： 안종렬 ,  서정탁 ,  박지훈 ,  전철호

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/06 ,  B82Y30/00 ,  B82Y99/00 ,  C23C18/08 ,  H01L21/02104 ,  H01L21/02378 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/02612 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02664 ,  H01L29/1606 ,  H01L29/778

Abstract: 그래핀에금속원자층을흡착시킴으로써비화학적결합에의한전자의편재화로인해상기그래핀에밴드갭을형성하여반도체화를달성할수 있다. 이와같은금속함유그래핀은센서, 트랜지스터와같은다양한전기소자에활용할수 있다.

公开(公告)号：KR101878750B1

公开(公告)日：2018-07-17

申请号：KR1020110059746

申请日：2011-06-20

Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

Inventor： 신현진 ,  최재영 ,  안종렬 ,  전철호

IPC: C01B31/02 ,  B82B1/00 ,  H01L21/328 ,  H01L51/50

CPC classification number: H01L29/778 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/28255 ,  H01L29/1606 ,  H01L29/4908 ,  H01L29/7317 ,  H01L29/7613 ,  H01L29/78684 ,  Y10T428/30

Abstract: 단일층그라펜에알칼리금속을함유시킴으로써비화학적결합에의한전자의편재화로인해상기단일층그라펜에밴드갭을형성하여반도체화를달성할수 있다. 이와같은알칼리금속함유단일층그라펜은센서, 트랜지스터와같은다양한전기소자에활용할수 있다.