公开(公告)号：KR1020120015214A

公开(公告)日：2012-02-21

申请号：KR1020100077542

申请日：2010-08-11

Applicant: 서울대학교산학협력단

Inventor： 이창희 ,  강찬모 ,  이현구

IPC: H01L51/52 ,  H01L51/50

CPC classification number: H01L51/002 ,  H01L51/4213

Abstract: PURPOSE: An organic/inorganic hybrid diode and a manufacturing method thereof are provided to improve a current characteristic by performing p-type doping on an organic layer. CONSTITUTION: A substrate, an anode electrode(11), a hole implant layer(12), an active layer(13), an electron injection layer(14), and a cathode electrode(15) are successively formed in a diode. Or the substrate, the cathode electrode, the electron injection layer, the active layer, the hole implant layer, and the anode electrode are successively in the diode. The anode electrode and the cathode electrode are made of ITO(Indium Tin Oxide), AZO or metal and alloy. A p-type semiconductor material is a material which dopes an organic compound with a p-type material. An n-type semiconductor material is doped with an n-type material, N(Nitron), In(Indium), Ga(Gallium), Sn(Stannum), or Li(Lithium).

Abstract translation: 目的：提供有机/无机混合二极管及其制造方法，以通过在有机层上进行p型掺杂来改善电流特性。 构成：在二极管中依次形成基板，阳极电极（11），空穴注入层（12），有源层（13），电子注入层（14）和阴极电极（15）。 或者基板，阴极电极，电子注入层，有源层，空穴注入层和阳极电极连续地在二极管中。 阳极电极和阴极由ITO（氧化铟锡），AZO或金属和合金制成。 p型半导体材料是用p型材料掺杂有机化合物的材料。 n型半导体材料掺杂有N型材料，N（Nitron），In（铟），Ga（镓），Sn（锡）或Li（锂）。

公开(公告)号：KR1020120106479A

公开(公告)日：2012-09-26

申请号：KR1020110024613

申请日：2011-03-18

Applicant: 서울대학교산학협력단

Inventor： 이창희 ,  강찬모 ,  이동구 ,  노승욱

IPC: H01L51/42 ,  H01L31/04

CPC classification number: Y02E10/549 ,  H01L51/42 ,  H01L31/04

Abstract: PURPOSE: An organic solar cell and a manufacturing method thereof are provided to improve efficiency by adding forward voltage to both electrodes of the organic solar cell and turning on the electricity for predetermined time. CONSTITUTION: A diode is formed by sequentially arranging a substrate, an anode, a hole implant layer(12), a photoactive layer, a electron injection layer, and a cathode or sequentially arranging the substrate, the cathode, the electron injection layer, the photoactive layer, the hole implant layer, and the anode. The anode and the cathode are formed by ITO and AZO or metal, alloy, conductivity polymer, carbon nano-tube, and graphene. A photoactive layer(13) uses an organic compound of 30nm-300nm or inorganic synthesized material.

Abstract translation: 目的：提供一种有机太阳能电池及其制造方法，通过向有机太阳能电池的两个电极添加正向电压并在预定时间内接通电力来提高效率。 构成：通过顺序地布置衬底，阳极，空穴注入层（12），光活性层，电子注入层和阴极或顺序地布置衬底，阴极，电子注入层， 光活性层，空穴注入层和阳极。 阳极和阴极由ITO和AZO或金属，合金，导电性聚合物，碳纳米管和石墨烯形成。 光敏层（13）使用30nm-300nm的有机化合物或无机合成材料。

公开(公告)号：KR1020120015193A

公开(公告)日：2012-02-21

申请号：KR1020100077503

申请日：2010-08-11

Applicant: 서울대학교산학협력단

Inventor： 이창희 ,  강찬모

IPC: H01L51/56

CPC classification number: H01L51/56 ,  H01L2251/56

Abstract: PURPOSE: An organic diode and a manufacturing method thereof are provided to greatly improve a current by applying a voltage to an organic diode for a period of time and passing the current. CONSTITUTION: A substrate, an anode electrode(11), a hole implant layer(12), an active layer(13), an electron injection layer(14), and a cathode electrode(15) are successively formed in a diode. Or the substrate, the cathode electrode, the electron injection layer, the active layer, the hole implant layer, and the anode electrode are successively in the diode. The anode electrode and the cathode electrode are made of ITO(Indium Tin Oxide), AZO or metal and alloy. The hole implant layer and the electron injection layer are made of thin metal, an organic compound or an oxide like WO3, MoO3, and V2O3. The organic compound or an organic and inorganic composite of 30nm-300nm are used for the active layer.

Abstract translation: 目的：提供一种有机二极管及其制造方法，以通过向有机二极管施加电压一段时间并使电流通过来大大改善电流。 构成：在二极管中依次形成基板，阳极电极（11），空穴注入层（12），有源层（13），电子注入层（14）和阴极电极（15）。 或者基板，阴极电极，电子注入层，有源层，空穴注入层和阳极电极连续地在二极管中。 阳极电极和阴极由ITO（氧化铟锡），AZO或金属和合金制成。 空穴注入层和电子注入层由薄金属，有机化合物或氧化物如WO3，MoO3和V2O3制成。 有机化合物或30nm-300nm的有机和无机复合材料用于活性层。