公开(公告)号：KR101306192B1

公开(公告)日：2013-10-16

申请号：KR1020120013747

申请日：2012-02-10

Applicant: 서울대학교산학협력단

Inventor： 조현덕 ,  노정균 ,  이현구 ,  이창희 ,  홍용택

IPC: H01L51/50 ,  H01L51/56 ,  H05B33/26

CPC classification number: H01L51/5056 ,  H01L51/0004 ,  H01L51/5024 ,  H01L51/5072 ,  H01L51/5203 ,  H01L51/5296 ,  H01L51/56 ,  H01L51/4266

Abstract: PURPOSE: A method for manufacturing an organic light emitting device and the organic light emitting device by the same are provided to reduce manufacturing time and costs by using a printing method. CONSTITUTION: A control electrode (120) is formed on a substrate (110). An insulating layer (130) for covering the upper surface of the control electrode is formed. A hole transport layer pattern is printed on at least one part of the insulating layer. An organic light emitting layer is in contact with at least one part of the surface of the hole transport layer pattern. An electron transport layer pattern is printed.

Abstract translation: 目的：提供一种制造有机发光器件及其有机发光器件的方法，以通过使用印刷方法来减少制造时间和成本。 构成：在基板（110）上形成控制电极（120）。 形成用于覆盖控制电极的上表面的绝缘层（130）。 在绝缘层的至少一部分上印刷空穴传输层图案。 有机发光层与空穴传输层图案的表面的至少一部分接触。 印刷电子传输层图案。

公开(公告)号：KR1020120106476A

公开(公告)日：2012-09-26

申请号：KR1020110024608

申请日：2011-03-18

Applicant: 서울대학교산학협력단

Inventor： 이창희 ,  이현구 ,  이동구

IPC: H01L51/50 ,  H05B33/10 ,  H05B33/14

CPC classification number: H01L51/502 ,  B82Y20/00 ,  H01L27/30 ,  H01L27/323

Abstract: PURPOSE: A method for manufacturing a quantum dot element is provided to simplify the structure of a touch pad by inserting a quantum dot or an organic semiconductor absorbing infrared rays in around red, green, and blue pixels. CONSTITUTION: A display using a quantum dot light emitting diode comprises an organic compound or an inorganic semiconductor pixel(13). The organic compound or the inorganic semiconductor pixel absorbs infrared rays in around a luminous pixel. A quantum dot pixel absorbing the infrared ray is formed with a stamp method. An organic semiconductor absorbing the infrared rays is formed with one or more methods selected in a group consisting of a vapor deposit method, a screen printing method, an inkjet printing method, and a M-contact printing method.

Abstract translation: 目的：提供量子点元件制造方法，通过将量子点或吸收红外线的有机半导体插入红色，绿色和蓝色像素中来简化触摸板的结构。 构成：使用量子点发光二极管的显示器包括有机化合物或无机半导体像素（13）。 有机化合物或无机半导体像素吸收发光像素周围的红外线。 用印模法形成吸收红外线的量子点像素。 吸收红外线的有机半导体通过选自气相沉积法，丝网印刷法，喷墨印刷法和M接触印刷法中的一种或多种方法形成。

公开(公告)号：KR1020120015214A

公开(公告)日：2012-02-21

申请号：KR1020100077542

申请日：2010-08-11

Applicant: 서울대학교산학협력단

Inventor： 이창희 ,  강찬모 ,  이현구

IPC: H01L51/52 ,  H01L51/50

CPC classification number: H01L51/002 ,  H01L51/4213

Abstract: PURPOSE: An organic/inorganic hybrid diode and a manufacturing method thereof are provided to improve a current characteristic by performing p-type doping on an organic layer. CONSTITUTION: A substrate, an anode electrode(11), a hole implant layer(12), an active layer(13), an electron injection layer(14), and a cathode electrode(15) are successively formed in a diode. Or the substrate, the cathode electrode, the electron injection layer, the active layer, the hole implant layer, and the anode electrode are successively in the diode. The anode electrode and the cathode electrode are made of ITO(Indium Tin Oxide), AZO or metal and alloy. A p-type semiconductor material is a material which dopes an organic compound with a p-type material. An n-type semiconductor material is doped with an n-type material, N(Nitron), In(Indium), Ga(Gallium), Sn(Stannum), or Li(Lithium).

Abstract translation: 目的：提供有机/无机混合二极管及其制造方法，以通过在有机层上进行p型掺杂来改善电流特性。 构成：在二极管中依次形成基板，阳极电极（11），空穴注入层（12），有源层（13），电子注入层（14）和阴极电极（15）。 或者基板，阴极电极，电子注入层，有源层，空穴注入层和阳极电极连续地在二极管中。 阳极电极和阴极由ITO（氧化铟锡），AZO或金属和合金制成。 p型半导体材料是用p型材料掺杂有机化合物的材料。 n型半导体材料掺杂有N型材料，N（Nitron），In（铟），Ga（镓），Sn（锡）或Li（锂）。

公开(公告)号：KR1020110085480A

公开(公告)日：2011-07-27

申请号：KR1020100005293

申请日：2010-01-20

Applicant: 서울대학교산학협력단

Inventor： 이창희 ,  이현구 ,  곽정훈 ,  윤도영 ,  박인선

IPC: H01L51/54

CPC classification number: H01L51/5072 ,  H01L51/5088 ,  H01L51/5234 ,  H01L2251/303

Abstract: PURPOSE: An organic light emitting diode and a manufacturing method thereof are provided to implant an inorganic nano particle between a first electrode and an electron transporting layer, thereby lowering the driving voltage of a device. CONSTITUTION: An inverted organic light emitting diode is made of a substrate, a cathode, an electron implanting or electron transporting layer(13), a light emitting layer(14), a hole transporting or hole implanting layer(16), and an anode. The electron implanting or electron transporting layer is made of inorganic nano particles. The cathode is made of thin metal films. The hole transporting or hole implanting layer is made or an organic layer, a material in which p type material is doped in an organic layer, or inorganic nano particles. The anode is made of metal whose diameter is longer than 60nm.

Abstract translation: 目的：提供一种有机发光二极管及其制造方法，用于在第一电极和电子传输层之间注入无机纳米颗粒，从而降低器件的驱动电压。 构造：倒置的有机发光二极管由衬底，阴极，电子注入或电子传输层（13），发光层（14），空穴传输或空穴注入层（16）和阳极 。 电子注入或电子传输层由无机纳米颗粒制成。 阴极由薄金属薄膜制成。 制造空穴输送层或空穴注入层或有机层，其中p型材料掺杂在有机层中的材料或无机纳米颗粒。 阳极由直径大于60nm的金属制成。