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Patent Agency Ranking
公开(公告)号：KR1020110071737A
公开(公告)日：2011-06-29
申请号：KR1020090128381
申请日：2009-12-21
Applicant: 삼성전자주식회사 , 서울대학교산학협력단
CPC classification number: H01L29/0665 , B82Y10/00 , G01N27/4145 , H01L29/78654 , H01L29/78681 , H01L29/7869 , H01L29/78696 , H01L29/47
Abstract: PURPOSE: A field effect transistor and a sensor based the same are provided to easily control a Schottky barrier by forming an electrode which is contacted with the surface of a semiconductor to form the Schottky barrier. CONSTITUTION: In a field effect transistor and a sensor based the same, a semiconductor channel is formed on a substrate. The semiconductor channel is comprised of a nanowire and a nanotude. A source electrode(121) and a drain electrode(122) are formed in the both ends of semiconductor channel. A third electrode(130) is contacted with the surface of a semiconductor to form the Schottky barrier. A source electrode, a drain electrode, and a third electrode are parallel with each other while having a certain interval between them.
Abstract translation: 目的：提供场效应晶体管和基于此的传感器，以通过形成与半导体表面接触形成肖特基势垒的电极来容易地控制肖特基势垒。 构成：在场效应晶体管和基于此的传感器中，在衬底上形成半导体沟道。 半导体通道由纳米线和纳米线构成。 在半导体通道的两端形成源电极（121）和漏电极（122）。 第三电极（130）与半导体的表面接触以形成肖特基势垒。 源电极，漏电极和第三电极在它们之间具有一定间隔时彼此平行。
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公开(公告)号：KR101951623B1
公开(公告)日：2019-02-26
申请号：KR1020120044215
申请日：2012-04-26
Applicant: 서울대학교산학협력단
IPC: G01N27/403 , G01N27/414 , C12Q1/68
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公开(公告)号：KR1020130120960A
公开(公告)日：2013-11-05
申请号：KR1020120044215
申请日：2012-04-26
Applicant: 서울대학교산학협력단
IPC: G01N27/403 , G01N27/414 , C12Q1/68
CPC classification number: G01N27/403 , G01N27/4145 , H01L29/0669 , H01L51/0048
Abstract: The present invention comprises: a substrate; a semiconductor channel which is made of a single-walled carbon nanotube formed on the substrate; a single-walled carbon nanotube field effect transistor (swCNT-FET) including a source-drain electrode, which is formed in both ends of the semiconductor channel; and an acetylcholine receptor protein lipid membrane which is formed in at least part of a surface of the semiconductor channel. The acetylcholine receptor protein provides the swCNT-FET based acetylcholine sensor, which selectively binds an acetylcholine .
Abstract translation: 本发明包括：基板; 由形成在基板上的单壁碳纳米管制成的半导体通道; 包括形成在半导体沟道的两端的源极 - 漏极的单壁碳纳米管场效应晶体管（swCNT-FET）; 以及形成在所述半导体通道的表面的至少一部分中的乙酰胆碱受体蛋白质脂质膜。 乙酰胆碱受体蛋白提供基于SWCNT-FET的乙酰胆碱传感器，其选择性地结合乙酰胆碱。
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公开(公告)号：KR1020130078177A
公开(公告)日：2013-07-10
申请号：KR1020110146972
申请日：2011-12-30
Applicant: 재단법인 포항산업과학연구원 , 서울대학교산학협력단
Abstract: PURPOSE: An ultrasound-soxhlet complex separation device and a complex separation method using the same are provided to precisely separate a substance melted in solvent from a substance not melted in the solvent. CONSTITUTION: A firs container (102) stores first solvent. A heating unit (104) heats the first container. A second container (106) forms an inner space including the first solvent. A condensing unit (108) supplies gas to the second container by circulating refrigerant. A first moving pipe (110) moves the first solvent to the condensing unit. A filter (112) passes the first solvent but selectively passes a separation target substance. An ultrasound generating unit (114) delivers ultrasound energy to the second container. A second moving pipe (116) circulates the first solvent to the first container.
Abstract translation: 目的：提供超声索氏提取复合物分离装置和使用其的复合分离方法，以将溶剂中熔化的物质与在溶剂中未熔融的物质精确分离。 构成：第一容器（102）存储第一溶剂。 加热单元（104）加热第一容器。 第二容器（106）形成包括第一溶剂的内部空间。 冷凝单元（108）通过循环制冷剂将气体供给到第二容器。 第一移动管（110）将第一溶剂移动到冷凝单元。 过滤器（112）通过第一溶剂，但选择性地通过分离目标物质。 超声波发生单元（114）将超声波能量传送到第二容器。 第二移动管道（116）将第一溶剂循环到第一容器。
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公开(公告)号：KR101711205B1
公开(公告)日：2017-03-02
申请号：KR1020090128381
申请日：2009-12-21
Applicant: 삼성전자주식회사 , 서울대학교산학협력단
CPC classification number: H01L29/0665 , B82Y10/00 , G01N27/4145 , H01L29/78654 , H01L29/78681 , H01L29/7869 , H01L29/78696
Abstract: 전계효과트랜지스터에있어서, 소스전극및 드레인전극과별개로형성되며반도체채널의표면에접촉하여쇼트키장벽을형성하는전극을형성함으로써쇼트키장벽의조절을용이하게할 수있다.
Abstract translation: 场效应晶体管具有独立于源电极和漏电极设置的至少一个电极，并且与半导体沟道的表面直接接触以形成肖特基势垒，使得可以容易地控制肖特基势垒。
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