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公开(公告)号：KR1020100074909A
公开(公告)日：2010-07-02
申请号：KR1020080133461
申请日：2008-12-24
Applicant: 서울대학교산학협력단
Abstract: PURPOSE: A pressure sensor and a manufacturing method thereof are provided to improve pressure sensitivity by arranging a nano wire which is a piezoresistive material to a location where the largest deformation is generated by an external pressure. CONSTITUTION: A pressure sensor comprises: a first substrate region(200) which is arranged on a first surface of a substrate(100) including a groove on a second surface; second substrate regions(210) which are four and are separated from four sides of the first substrate region with a constant interval; a nano wire(180) which respectively connects the four sides of the first substrate region with the four second substrate regions and is released from the substrate; and a metal pad which is respectively arranged on the upper parts of the four second substrate regions. An undercut is respectively arranged on the lower part of the four second substrate regions.
Abstract translation: 目的：提供一种压力传感器及其制造方法，通过将作为压阻材料的纳米线布置到通过外部压力产生最大变形的位置来提高压力灵敏度。 构成：压力传感器包括：第一基板区域（200），布置在基板（100）的第一表面上，第一表面包括在第二表面上的凹槽; 第二基板区域（210），其四个并且以一定间隔与第一基板区域的四个边隔开; 分别将第一基板区域的四个边缘与四个第二基板区域连接并从基板释放的纳米线材（180） 以及分别设置在四个第二基板区域的上部的金属焊盘。 在四个第二基板区域的下部分别设置底切。
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公开(公告)号：KR101101925B1
公开(公告)日：2012-01-02
申请号：KR1020080133431
申请日：2008-12-24
Applicant: 서울대학교산학협력단
Abstract: 본 발명은 e-빔 및 SOI기판을 사용하지 않고 실리콘 기판의 측벽에 형성된 보호층 패턴과 통상적인 식각 공정을 이용하여 단결정실리콘 나노 와이어를 제조할 수 있는 나노 와이어 제조 방법에 관한 것이다. 본 발명에 따르면, e-빔 및 SOI기판을 사용하지 않고 통상적인 포토리쏘그래피공정 및 반도체 기판을 사용하므로 나노와이어의 제조 비용을 절감할 수 있다.
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公开(公告)号：KR1020100074883A
公开(公告)日：2010-07-02
申请号：KR1020080133431
申请日：2008-12-24
Applicant: 서울대학교산학협력단
CPC classification number: H01L21/02603 , H01L21/02554 , H01L21/0274 , H01L21/28 , H01L21/30604 , H01L21/3065
Abstract: PURPOSE: A manufacturing method of a nanowire is provided to manufacture the single-crystal silicon nanowire using a protective layer pattern formed on the side wall of a silicon substrate, and an etching process. CONSTITUTION: A manufacturing method of a nanowire comprises the following steps: forming more than grooves on a substrate(100); forming a protective layer pattern on upper side wall of the grooves; forming a lower side wall of the grooves by etching the lower side of the grooves using the protective layer pattern as an etching mask; etching the lower side wall of the grooves; removing the protective layer pattern; and etching the substrate in between two grooves to form the nanowire(130).
Abstract translation: 目的：提供一种纳米线的制造方法，以使用形成在硅衬底的侧壁上的保护层图案和蚀刻工艺来制造单晶硅纳米线。 构成：纳米线的制造方法包括以下步骤：在基板（100）上形成多于凹槽; 在槽的上侧壁上形成保护层图案; 通过使用保护层图案蚀刻凹槽的下侧作为蚀刻掩模来形成凹槽的下侧壁; 蚀刻凹槽的下侧壁; 去除保护层图案; 并且在两个沟槽之间蚀刻所述衬底以形成所述纳米线（130）。
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