Abstract:
PURPOSE: A method for manufacturing an oxide semiconductor for sensing a chemical weapon gas and a method for manufacturing a sensor having the same are provided to for a tin oxide semiconductor by a flame spray pyrolysis, thereby efficiently sensing a DDMP(Dimethyl methylphosphonate) through a responsive effect of the tin oxide semiconductor. CONSTITUTION: A method for manufacturing an oxide semiconductor for sensing a chemical weapon gas is as follows. A precursor solution of a tin chloride is prepared(110). The tin oxide semiconductor having a porous structure of a crystalline nano particle is formed by performing a flame spray pyrolysis with respect to a droplet of the precursor solution(120). The crystalline nano particle of the tin oxide semiconductor reacts to a chemical weapon gas, thereby changing the conductivity of the tin oxide. [Reference numerals] (110) Preparing a precursor solution of a tin chloride; (120) Forming crystalline nano particles of tin chloride by performing a flame spray pyrolysis to a droplet of the precursor solution; (AA) Start; (BB) Finish