화학무기작용제 가스 감지용 산화물 반도체의 제조 방법 및 이를 포함하는 센서의 제조 방법
    1.
    发明公开
    화학무기작용제 가스 감지용 산화물 반도체의 제조 방법 및 이를 포함하는 센서의 제조 방법 无效
    制造化学战剂的氧化物半导体气体传感材料的方法及其制造方法

    公开(公告)号:KR1020120100025A

    公开(公告)日:2012-09-12

    申请号:KR1020110018621

    申请日:2011-03-02

    Abstract: PURPOSE: A method for manufacturing an oxide semiconductor for sensing a chemical weapon gas and a method for manufacturing a sensor having the same are provided to for a tin oxide semiconductor by a flame spray pyrolysis, thereby efficiently sensing a DDMP(Dimethyl methylphosphonate) through a responsive effect of the tin oxide semiconductor. CONSTITUTION: A method for manufacturing an oxide semiconductor for sensing a chemical weapon gas is as follows. A precursor solution of a tin chloride is prepared(110). The tin oxide semiconductor having a porous structure of a crystalline nano particle is formed by performing a flame spray pyrolysis with respect to a droplet of the precursor solution(120). The crystalline nano particle of the tin oxide semiconductor reacts to a chemical weapon gas, thereby changing the conductivity of the tin oxide. [Reference numerals] (110) Preparing a precursor solution of a tin chloride; (120) Forming crystalline nano particles of tin chloride by performing a flame spray pyrolysis to a droplet of the precursor solution; (AA) Start; (BB) Finish

    Abstract translation: 目的:通过火焰喷雾热解法,为氧化锡半导体提供一种制造用于感测化学武器气体的氧化物半导体的方法及其制造方法,从而有效地感测DDMP(甲基膦酸二甲酯),通过 氧化锡半导体的响应效应。 构成:用于制造用于感测化学武器气体的氧化物半导体的方法如下。 制备氯化锡的前体溶液(110)。 具有结晶纳米颗粒的多孔结构的氧化锡半导体通过相对于前体溶液(120)的液滴进行火焰喷射热分解而形成。 氧化锡半导体的结晶纳米颗粒与化学武器气体反应,从而改变氧化锡的导电性。 (附图标记)(110)制备氯化锡的前体溶液; (120)通过对前体溶液的液滴进行火焰喷雾热解而形成氯化锡的结晶纳米颗粒; (AA)开始; (BB)完成

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