公开(公告)号：KR1020100104413A

公开(公告)日：2010-09-29

申请号：KR1020090022811

申请日：2009-03-17

Applicant: 서울대학교산학협력단

Inventor： 최석봉 ,  이재철 ,  이강수 ,  김갑진

IPC: G11C11/15 ,  H01L27/115

CPC classification number: G11C11/161 ,  G11C11/1675 ,  G11C11/15 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

Abstract: PURPOSE: A magnetic memory device is provided to improve magnetic domain moving efficiency by a current by maintaining vertical magnetism in a thick magnetic layer. CONSTITUTION: A magnetic memory device includes a non-magnetic layer(100a,100b), a first magnetic layer(110a,110b), and a second magnetic layer(120). A first magnetic layer is formed between nonmagnetic layers. A second magnetic layer is formed between the first magnetic layers. A saturated magnetization value of the second magnetic layer is below the saturated magnetization value of the first magnetic layer.

Abstract translation: 目的：提供一种磁存储器件，通过在厚磁层中维持垂直磁场，通过电流提高磁畴移动效率。 构成：磁存储器件包括非磁性层（100a，100b），第一磁性层（110a，110b）和第二磁性层（120）。 在非磁性层之间形成第一磁性层。 在第一磁性层之间形成第二磁性层。 第二磁性层的饱和磁化值低于第一磁性层的饱和磁化值。